We propose a novel slow light scheme using a resonant Raman system. Slow down factor of 19 with a bandwidth exceeding 2 THz can be achieved in semiconductor quantum wells with signal gain at room temperature.
Room temperature quantum-well semiconductor optical amplifier with large input power is utilized in both the absorption and gain regime as an optical group delay and advance (slow and fast light), respectively. Material resonance created by coherent population oscillation and four wave mixing is tuned by electrical injection current, which in turn controls the speed of light. The four-wave mixing and population oscillation model explains the slow-to-fast light switching. Experimentally, the scheme achieves 200 degrees phase shift at 1 GHz, which corresponds to 0.56 delay-bandwidth product. The device presents a feasible building block of a multi-bit optical buffer system.
We propose and experimentally demonstrate a scheme to generate optically controlled delays based on off-resonant Raman absorption. Dispersion in a transparency window between two neighboring, optically activated Raman absorption lines is used to reduce the group velocity of broadband 765 nm pulses. We implement this approach in a potassium titanyl phosphate (KTP) waveguide at room temperature, and demonstrate Raman-induced delays of up to 140 fs for a 650-fs duration, 1.8-THz bandwidth, pulse. Our approach should be applicable to single-photon signals, offers wavelength tunability, and is a step toward processing ultrafast photons.
Abstract : Slow and fast light schemes are attractive for many applications including optical signal processing and RF phased array antennas. Semiconductor based schemes offer electrical control of velocity at very high bandwidths in an extremely compact device. Further they operate at room temperature and can be easily integrated into various optical systems. In this program, we used ultrafast nonlinearities in semiconductor optical amplifiers (SOAs) to achieve tunable time shifts at THz frequencies. In particular, we leveraged the spectral hole burning phenomena and demonstrated fast light in quantum well (QW) and quantum dot (QD) SOAs. The research included both theoretical and experimental efforts. Theoretical work was developed to understand and simulate experimental results and to optimize device designs. We introduced a novel pulse compression technique to reduce the pulse width to 100 fs to efficiently use ultra-fast nonlinearities in SOAs to achieve a large and cascadable delay. We implemented a novel chirped pulse scheme and obtained the largest advance-pulse-product of 10.7 with THz bandwidth. We demonstrated slow and fast light with GHz RF signal in QW/QD SOAs using coherent population oscillation and four-wave mixing. We also demonstrated cascaded SOAs in a loop to scale up the delay/advance.