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International Nano-Optoelectronics Workshop

Slow and Fast Lights in a Quantum Dot Semiconductor Optical Amplifier near 1.55 μm

Akira Matsudaira, Dong-Han Lee, P. Kondratko, D. Nielson, S. L. Chuang, N. J. Kim, Jung Mi Oh, S. H. Pyun, W. G. Jeong

Published Jul 1, 2007• 1 citation
Publisher

Abstract

Slow light in the absorption regime and fast light in the gain regime are demonstrated in 1.55 μm quantum-dot semiconductor optical amplifiers at room temperature for both ground state and excited state.
DOI
10.1109/inow.2007.4302947

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The gain and phase dynamics of a high quality quantum dot semiconductor optical amplifier were measured at various wavelengths. In the ground state (GS), the amplitude of the slow component was negligible and the fast dominant gain recovery time was 0.7 ps. In the excited state (ES), the slow component was not negligible although small. The time required to recover from 90% to 10% was 2.0 ps in the GS but gradually increased to 31 ps in the ES. This finding predicts no pattern effects in the GS, but finite pattern effects in the ES.
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We demonstrate room-temperature slow light that is electrically and optically controllable by using a quantum-dot (QD) semiconductor optical amplifier (SOA) at zero and low bias below the transparency current. The absorption spectrum of the QD SOA exhibits a spectral dip with a corresponding group-index dispersion and group delay owing to coherent population oscillation caused by the interaction of pump and probe laser light near resonance of the first heavy-hole-conduction-state transition. At an optical pump power of approximately 0.3 mW inside the single-mode waveguide without current injection, a group-index change of 3.0 with a bandwidth of 2 GHz was measured. This group-index change can be controlled by injection of electrical current and by changing the optical pump power.