Slow light and fast light at room temperature using coherent population oscillation effects in quantum-well and quantum-dot semiconductor optical amplifiers are demonstrated experimentally and compared well with theoretical results.
Slow and fast light in quantum-well (QW) and quantum-dot (QD) semiconductor optical amplifiers (SOAs) using nonlinear quantum optical effects are presented.We demonstrate electrical and optical controls of fast light using the coherent population oscillation (CPO) and four wave mixing (FWM) in the gain regime of QW SOAs.We then consider the dependence on the wavelength and modal gain of the pump in QW SOAs.To enhance the tunable photonic delay of a single QW SOA, we explore a serial cascade of multiple amplifiers.A model for the number of QW SOAs in series with variable optical attenuation is developed and matched to the experimental data.We demonstrate the scaling law and the bandwidth control by using the serial cascade of multiple QW SOAs.Experimentally, we achieve a phase change of 160 • and a scaling factor of four at 1 GHz using the cascade of four QW SOAs.Finally, we investigate CPO and FWM slow and fast light of QD SOAs.The experiment shows that the bandwidth of the time delay as a function of the modulation frequency changes in the absorption and gain regimes due to the carrier-lifetime variation.The tunable phase shift in QD SOA is compared between the ground-and first excited-state transitions with different modal gains.
Recent progress in the field of quantum dot/dash based semiconductor optical amplifiers (SOAs) for slow and fast light is discussed. Room temperature fast light has been obtained in InAs/InP QDash based SOAs by means of coherent population oscillation and four wave mixing (FWM) effects. Typical optical delays amount to 55 ps at 2 GHz. Growth optimization of the QDashes allowed us to achieve high modal gain, leading to very similar performances, e.g. gain and FWM efficiency, to those of a bulk SOA. A novel approach based on linear spectrograms is also introduced to measure the phase shift induced by wave mixing in an SOA.
Controlling the group velocity of light has great potential applications in future optical communication, photonic computing, and microwave signal processing. These applications have recently triggered immense experimental and theoretical interest in the research community. Numerous studies report large optical delays while sacrificing many important aspects of engineering feasibility: bandwidth, device compactness, room temperature operation, ease of integration, and minimized signal insertion loss. Slow and fast light in the quantum-dot and quantum-well semiconductor optical amplifiers (SOAs) address many of these characteristics. First, this dissertation presents variable slow light in quantum-dot SOAs using population oscillation in an absorptive medium. Bandwidth tuning of slow light is observed with forward and reverse bias of quantum-dots. Second, the study explores four-wave mixing and population oscillation in a quantum-well gain medium. Control of optical advance and bandwidth is achieved by the medium's electrical bias or the optical pump power. Moreover, the fast light in the cascade of N number of quantum-well SOAs is experimentally and theoretically investigated. The cascaded scheme uses SOA-to-SOA attenuators to achieve active delay-bandwidth control. Finally, a large delay-bandwidth scheme is presented in which slow-to-fast light is observed by means of absorption to gain switching. More than a half cycle of tunable delay at 1 GHz bandwidth is achieved at optical frequencies.
We demonstrate room-temperature slow light that is electrically and optically controllable by using a quantum-dot (QD) semiconductor optical amplifier (SOA) at zero and low bias below the transparency current. The absorption spectrum of the QD SOA exhibits a spectral dip with a corresponding group-index dispersion and group delay owing to coherent population oscillation caused by the interaction of pump and probe laser light near resonance of the first heavy-hole-conduction-state transition. At an optical pump power of approximately 0.3 mW inside the single-mode waveguide without current injection, a group-index change of 3.0 with a bandwidth of 2 GHz was measured. This group-index change can be controlled by injection of electrical current and by changing the optical pump power.