Communications in Theoretical Physics
Characteristics of Level Anticrossing in Parallel Electric and Magnetic Fields
Sihong Gu, Baiwen Li
Abstract
Using the matrix diagonalization method, we have studied two kinds of level anticrosing of Rydberg cesium atom in parallel electric and magnetic fields. Our numerical results reveal that in the vicinity position of level crossing between different parity states in a magnetic field, the energy levels and other behaviors of the states are quite sensitive to the electric field. We tabulate some features which may be as a guide in experimental verification.