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The Review of Laser Engineering

Single-Photon Detectors for Fiber-Optic Quantum Cryptography and Communications

Akio Yoshizawa

Published Jan 1, 2008• 0 citations
Publisher

Abstract

I review the recent progress on single-photon detectors developed for detecting 1550-nm photons. Thermoelectrically cooled single-photon detectors based on indium-gallium-arsenide avalanche photodiodes are simple to operate and are desirable for practical applications. Methods for reducing the dark count rate and after-pulsing probability are discussed. I also briefly explain the concepts of upconversion-based singlephoton detectors and ultra-low-noise superconducting single-photon detectors.

DOI
10.2184/lsj.36.476

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I review the recent progress on single-photon detectors developed for detecting 1550-nm photons. Thermoelectrically cooled single-photon detectors based on indium-gallium-arsenide avalanche photodiodes are simple to operate and are desirable for practical applications. Methods for reducing the dark count rate and after-pulsing probability are discussed. I also briefly explain the concepts of upconversion-based singlephoton detectors and ultra-low-noise superconducting single-photon detectors.
Abstract In order to realize long‐distance quantum cryptography based on standard optical fiber network, we have developed a single‐photon detector at 1550 nm using InGaAs/InP avalanche photodiodes (APDs). To reduce the dark count probability, APDs were cooled and operated with a Gated Passive Quenching Circuit. A quantum efficiency of 13.7% was obtained at −55 °C while keeping the dark count probability per gate (2 ns) as low as 2.4 × 10−5. In this paper we will discuss the performance of the developed single‐photon detector in view of application to quantum cryptography. © 2003 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 86(5): 10–15, 2003; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/ecjb.10115
The implementation and commercialization of quantum cryptography technologies have to face some challenges related to the development of single-photon detectors operating at 1550 nm. The main requirements are: i) high detection efficiency; ii) low noise; iii) high count rate; iv) low timing jitter. Different technologies are currently available for single-photon detection at 1550 nm, but semiconductor devices (like Single-Photon Avalanche Diode, SPAD) offer a photon detection efficiency that is inherently higher than any photocathode employed in vacuum tube detectors. Additionally InGaAs/InP SPADs can detect single photons at 1550 nm with low noise when moderately cooled by means of thermo-electric coolers. Consequently, InGaAs/InP SPAD can be the enabling technology of practical quantum key distribution (QKD) systems, provided that the maximum count rate is increased above 1 Mcps. The main limit is the afterpulsing effect that usually sets too long (< 10 μs) a hold-off time after each avalanche ignition. We present the developments achieved in InGaAs/InP SPAD device design, fabrication technology and front-end electronics, aimed at decreasing the afterpulsing effect, while not impairing photon detection efficiency and timing jitter. The new InGaAs/InP SPADs provide count rates higher than 1 Mcps and temporal response with 60 ps Full-Width at Half Maximum and very short (30 ps time constant) tail. The front-end electronics includes a wide-band pulse generator able to gate the SPAD up to 133 MHz repetition rate. Eventually, a fast avalanche-quenching scheme minimizes quenching time to less than 1 ns, thus effectively reducing afterpulsing by decreasing the total charge flowing through the junction.
We provide a direct comparison between the InGaAs avalanche photodiode (APD) and the NbN superconducting single photon detector (SSPD) for applications in fiber-based quantum cryptography. The quantum efficiency and dark count rate were measured for each detector, and used to calculate the quantum bit error rate (QBER) and shared key rate for a QKD link. The results indicate that, despite low quantum efficiency, the speed of the SSPD makes it a superior detector for quantum information applications. Finally, we present results of an initial integration of an SSPD into a receiver node of the DARPA quantum network to perform quantum key distribution. Encoding quantum information on single photons has enabled the realization of a number of unique communication schemes such as the implementation of the BB84 protocol for quantum key distribution 1 and quantum dense coding. 2 Furthermore, the implementation of these schemes using photons at telecommunication wavelengths has permitted their extension to fiber optic networks, 3,4 drastically increasing the practicality of quantum information processing. To date, the state of the art in commercially available single photon detection at telecommunication wavelengths (1550 nm) has been the thermo-electrically cooled InGaAs avalanche photodiode (APD). The cooled InGaAs APD is generally operated at T = -60°C in the reverse-biased Geiger mode. Though these detectors have been successfully implemented in operating QKD links in optical fiber, the InGaAs APD suffers from afterpulsing effects that limit the key exchange rates. New SPD (single photon detector) technologies based on superconducting materials are emerging that hold tremendous promise for drastically increasing the photon counting rate and eliminating dark noise.57 The SSPD consists of a NbN thin film (t ∼ 5 nm) patterned into a narrow (w ∼ 100 nm) microstrip meander that is ∼ 500μm in length. The detector is cooled to T < 4K in a closed cycle refrigeration unit and a bias current I b is supplied to the device just below the superconducting critical current (I c ). When a photon is incident upon the microstrip superconductivity is broken in the region local to photon absorption and a normal state region is formed in the device. The current passing through the device causes a measurable voltage pulse in the detector that can be amplified and shaped to act as an input for traditional logic circuitry. Due to the unique electronic bandstructure in a superconducting material the intrinsic response time of the device is on the order of picoseconds, so that the repetition rate may be increased above 1 GHz 8 without being susceptible to afterpulsing effects that plague the InGaAs APD. 9 To make a direct comparison between the InGaAs APD and the SSPD both were placed in a SPD characterization testbed to measure quantum efficiency and dark count rate at a variety of bias conditions. The QBER for a QKD link is calculated from the measured parameters and then compared to requirements for a provably secure QKD link. Following detector characterization, one of the nodes of the DARPA Quantum Network operated by BBN Technologies 3 utilized an SSPD in the receiver to transmit key material. The demonstration provides an in situ comparison between the InGaAs APD, normally operated in the BBN link, and the SSPD.
Abstract We build and test a single-photon detector based on a Si avalanche photodiode Excelitas 30902SH thermoelectrically cooled to −100∘C. Our detector has dark count rate below 1 Hz, 500 μm500\ \mu\mathrm{m}500 μm 500 μ m diameter photosensitive area, photon detection efficiency around 50%, afterpulsing less than 0.35%, and timing jitter under 1 ns. These characteristics make it suitable for long-distance free-space quantum communication links, which we briefly discuss. We also report an improved method that we call long-time afterpulsing analysis, used to determine and visualise long trap lifetimes at different temperatures.