The optical properties of defect-perturbed ${\mathrm{Er}}^{3+}$ and ${\mathrm{Mn}}^{2+}$ ions in RbMg ${\mathrm{F}}_{3}$ crystals have been investigated. Previous research has shown that ${\mathrm{Mn}}^{2+}$ optical transitions can be enhanced by as much as ${10}^{5}$ through spin coupling with a nearby $F$ center. This result has been further verified. Evidence is presented that radiation-defect--- ${\mathrm{Er}}^{3+}$ complexes can be formed in RbMg ${\mathrm{F}}_{3}$ . Both the perturbed ${\mathrm{Mn}}^{2+}$ and ${\mathrm{Er}}^{3+}$ have detectable optical transitions. Our analysis suggests that, although the perturbed ${\mathrm{Er}}^{3+}$ transitions are shifted in energy, the oscillator strength of the ${\mathrm{Er}}^{3+}^{4}S_{\frac{3}{2}}\ensuremath{\rightarrow}^{4}I_{\frac{15}{2}}$ transition is increased by at most an order of magnitude by the presence of $F$ centers. The $^{4}S_{\frac{3}{2}}\ensuremath{\rightarrow}^{4}I_{\frac{15}{2}}$ transition for the radiation-defect-perturbed ${\mathrm{Er}}^{3+}$ persists to room temperature and has a lifetime of 210 \ensuremath{\mu}s.The optical properties of defect-perturbed ${\mathrm{Er}}^{3+}$ and ${\mathrm{Mn}}^{2+}$ ions in RbMg${\mathrm{F}}_{3}$ crystals have been investigated. Previous research has shown that ${\mathrm{Mn}}^{2+}$ optical transitions can be enhanced by as much as ${10}^{5}$ through spin coupling with a nearby $F$ center. This result has been further verified. Evidence is presented that radiation-defect---${\mathrm{Er}}^{3+}$ complexes can be formed in RbMg${\mathrm{F}}_{3}$. Both the perturbed ${\mathrm{Mn}}^{2+}$ and ${\mathrm{Er}}^{3+}$ have detectable optical transitions. Our analysis suggests that, although the perturbed ${\mathrm{Er}}^{3+}$ transitions are shifted in energy, the oscillator strength of the ${\mathrm{Er}}^{3+}^{4}S_{\frac{3}{2}}\ensuremath{\rightarrow}^{4}I_{\frac{15}{2}}$ transition is increased by at most an order of magnitude by the presence of $F$ centers. The $^{4}S_{\frac{3}{2}}\ensuremath{\rightarrow}^{4}I_{\frac{15}{2}}$ transition for the radiation-defect-perturbed ${\mathrm{Er}}^{3+}$ persists to room temperature and has a lifetime of 210 \ensuremath{\mu}s.

Physical review. B, Condensed matterSep 1, 198232 citations

INVESTIGATION OF THE MAGNETO-OPTICAL PROPERTIES OF RARE-EARTH IONS

Anvar Karimovich Muxammadiyev, Nafisa Ineoyatovna Jurayeva

Scientific Bulletin of Namangan State UniversityJan 1, 20190 citations

Monolithic high density integrated photonics on bulk lithium niobate

Zizheng Li, Harmen Smedes, Bruno Lopez-Rodriguez +3 more

Functional electro-optic (EO) tunable photonic integrated circuits are crucial to next-generation information processing and advanced computing, where ferroelectric materials such as lithium niobate (LiNbO3) provide outstanding optical properties and versatile tuning mechanisms. However, beyond achieving high-performance devices, practical deployment of LiNbO3 photonic integrated circuits requires rapid and cost-effective scale-up, which remains challenging because of the fabrication complexity and high costs of ion-sliced thin-film lithium niobate and wafer bonding processes. To address this gap, we demonstrate a fully monolithic photonic platform, amorphous silicon carbide (a-SiC) on bulk LiNbO3 crystal substrate, enabling scalable, CMOS-compatible, low-cost, and high-density photonic integrated circuits without relying on thin-film LiNbO3. This integration approach breaks the long-standing cost-performance-scalability tradeoff, and intrinsically eliminates the need for sophisticated fabrication processes, including ion slicing, wafer bonding, and LiNbO3 etching. It realizes high-density, low-loss, and record high EO tuning efficiency of VpiL = 2.87 Vcm on bulk LiNbO3 crystal substrate. Furthermore, leveraging slow-light effect near photonic crystal bandgap, an 8.5-fold EO tuning efficiency enhancement is achieved, highlighting the platform's capability in confinement control and dispersion engineering.Functional electro-optic (EO) tunable photonic integrated circuits are crucial to next-generation information processing and advanced computing, where ferroelectric materials such as lithium niobate (LiNbO3) provide outstanding optical properties and versatile tuning mechanisms. However, beyond achieving high-performance devices, practical deployment of LiNbO3 photonic integrated circuits requires rapid and cost-effective scale-up, which remains challenging because of the fabrication complexity and high costs of ion-sliced thin-film lithium niobate and wafer bonding processes. To address this gap, we demonstrate a fully monolithic photonic platform, amorphous silicon carbide (a-SiC) on bulk LiNbO3 crystal substrate, enabling scalable, CMOS-compatible, low-cost, and high-density photonic integrated circuits without relying on thin-film LiNbO3. This integration approach breaks the long-standing cost-performance-scalability tradeoff, and intrinsically eliminates the need for sophisticated fabrication processes, including ion slicing, wafer bonding, and LiNbO3 etching. It realizes high-density, low-loss, and record high EO tuning efficiency of VpiL = 2.87 Vcm on bulk LiNbO3 crystal substrate. Furthermore, leveraging slow-light effect near photonic crystal bandgap, an 8.5-fold EO tuning efficiency enhancement is achieved, highlighting the platform's capability in confinement control and dispersion engineering.

physics.opticsCross-listedarXiv:2608.15936Aug 18, 2026

The optical properties of defect-perturbed

{\mathrm{Er}}^{3+}

and

{\mathrm{Mn}}^{2+}

ions in RbMg

{\mathrm{F}}_{3}

crystals have been investigated. Previous research has shown that

{\mathrm{Mn}}^{2+}

optical transitions can be enhanced by as much as

{10}^{5}

through spin coupling with a nearby

F

center. This result has been further verified. Evidence is presented that radiation-defect---

{\mathrm{Er}}^{3+}

complexes can be formed in RbMg

{\mathrm{F}}_{3}

. Both the perturbed

{\mathrm{Mn}}^{2+}

and

{\mathrm{Er}}^{3+}

have detectable optical transitions. Our analysis suggests that, although the perturbed

{\mathrm{Er}}^{3+}

transitions are shifted in energy, the oscillator strength of the ${\mathrm{Er}}^{3+}^{4}S_{\frac{3}{2}}\ensuremath{\rightarrow}^{4}I_{\frac{15}{2}}$ transition is increased by at most an order of magnitude by the presence of

F

centers. The $^{4}S_{\frac{3}{2}}\ensuremath{\rightarrow}^{4}I_{\frac{15}{2}}$ transition for the radiation-defect-perturbed

{\mathrm{Er}}^{3+}

persists to room temperature and has a lifetime of 210 \ensuremath{\mu}s.