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Two-Colour Excitation of Impurity Trapped Excitons in Wide Bandgap Insulators

Pubudu S. Senanayake

Published Jan 1, 2013• 0 citations
Publisher

Abstract

Impurity trapped excitons (ITEs) occurring in divalent ytterbium doped calcium and strontium fluoride crystals have been investigated by exploiting the radically different radiative decay rates of the lowest exciton state and higher excited states, utilizing a novel two-colour transient photoluminescence enhancement experiment. The ITE energy levels have been directly measured with the observation of sharp transitions occurring from the changes of states of the localized hole and broad bands associated with changes of state of the delocalized electrons. The dynamic behaviour under excitation by time delayed ultra-violet (UV) and infrared (IR) pulses has been observed allowing for the identification of excitation and decay pathways between the ITE states. The position and transition intensities of the sharp lines within the IR excitation spectrum have been successfully matched using a semi-empirical effective Hamiltonian crystal field model. In CaCaF₂:Yb²⁺ the lines occurring at 249 and 1145 cm⁻¹ were matched with the crystal field parameter B4 = 800 cm⁻¹ and the exchange parameter G3(fs) = 5900 cm⁻¹. In SrCaF₂:Yb²⁺ these lines were observed at 178 and 1284 cm⁻¹ and matched with B4 = 600 cm⁻¹ and G3(fs) = 7278 cm⁻¹. Local heating and direct absorption by intra-excitonic transitions are found to be the causes of the broad band observed in the spectrum and have been deconvolved by studying the dynamic behaviour of the monitored emission at different IR excitation frequencies. Through this modeling, higher lying ITE states have been identified occurring at 785 cm⁻¹ in SrCaF₂:Yb²⁺ and in between 740 - 820 cm⁻¹ in CaCaF₂:Yb²⁺. The dynamic model developed successfully simulates the temporal behaviour of the emission under IR excitation under a variety of parameters including IR fluence, excitation frequency, sample temperature and UV - IR pulse delay. Examination of the SrCaF₂:Yb²⁺ dynamic behaviour over a time scale of 100 ms shows UV driven trap population at a rate of approximately 3% per pulse, which are liberated and recycled to the Yb²⁺ ground state by the IR pulse. The two-colour technique is applied to MgCaF₂:Yb²⁺, a candidate for possible ITE emission. Temperature dependent emission spectra obtained under UV excitation indicates the possibility of an ITE state, independently populated from the 5d level of the Yb²⁺. Typical 5d emission is also observed from this system. Under IR excitation, liberation of shallow traps and possible local heating is observed. No ITE emission is conclusively found with IR probing.

DOI
10.26021/7290

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Impurity trapped excitons (ITEs) occurring in divalent ytterbium doped calcium and strontium fluoride crystals have been investigated by exploiting the radically different radiative decay rates of the lowest exciton state and higher excited states, utilizing a novel two-colour transient photoluminescence enhancement experiment. The ITE energy levels have been directly measured with the observation of sharp transitions occurring from the changes of states of the localized hole and broad bands associated with changes of state of the delocalized electrons. The dynamic behaviour under excitation by time delayed ultra-violet (UV) and infrared (IR) pulses has been observed allowing for the identification of excitation and decay pathways between the ITE states. The position and transition intensities of the sharp lines within the IR excitation spectrum have been successfully matched using a semi-empirical effective Hamiltonian crystal field model. In CaCaF₂:Yb²⁺ the lines occurring at 249 and 1145 cm⁻¹ were matched with the crystal field parameter B4 = 800 cm⁻¹ and the exchange parameter G3(fs) = 5900 cm⁻¹. In SrCaF₂:Yb²⁺ these lines were observed at 178 and 1284 cm⁻¹ and matched with B4 = 600 cm⁻¹ and G3(fs) = 7278 cm⁻¹. Local heating and direct absorption by intra-excitonic transitions are found to be the causes of the broad band observed in the spectrum and have been deconvolved by studying the dynamic behaviour of the monitored emission at different IR excitation frequencies. Through this modeling, higher lying ITE states have been identified occurring at 785 cm⁻¹ in SrCaF₂:Yb²⁺ and in between 740 - 820 cm⁻¹ in CaCaF₂:Yb²⁺. The dynamic model developed successfully simulates the temporal behaviour of the emission under IR excitation under a variety of parameters including IR fluence, excitation frequency, sample temperature and UV - IR pulse delay. Examination of the SrCaF₂:Yb²⁺ dynamic behaviour over a time scale of 100 ms shows UV driven trap population at a rate of approximately 3% per pulse, which are liberated and recycled to the Yb²⁺ ground state by the IR pulse. The two-colour technique is applied to MgCaF₂:Yb²⁺, a candidate for possible ITE emission. Temperature dependent emission spectra obtained under UV excitation indicates the possibility of an ITE state, independently populated from the 5d level of the Yb²⁺. Typical 5d emission is also observed from this system. Under IR excitation, liberation of shallow traps and possible local heating is observed. No ITE emission is conclusively found with IR probing.
We model the dynamic behaviour observed for impurity-trapped excitons in SrF2:Yb2+ using transient photoluminescence enhancement induced via a two-frequency, sequential excitation process employing an UV optical parametric amplifier synchronized to an IR free electron laser (FEL). We observe sharp transitions interpreted as a change of state of the localized hole and broad bands interpreted as a change of state of the delocalized electron. Our modeling indicates that the 4f crystal-field interaction is 25% smaller than in CaF2. The photoluminescence enhancement transients are analyzed across a range of excitation frequencies using a system of rate equations. The temporal behavior is explained in terms of intra-excitonic relaxation, local lattice heating by the FEL, and liberation of electrons from trap states.
We demonstrate a direct measurement of the energy levels of impurity-trapped excitons in CaF2{}_{2}2​:Yb2+{}^{2+}2+. The radically different radiative decay rates of the lowest exciton state and higher excited states enable the generation of a transient photoluminescence enhancement measured via a two-step excitation process. We observe sharp transitions arising from changes of state of localized electrons, broad bands associated with changes of state of delocalized electrons, and broad bands arising from trap liberation.
The photoluminescence spectra of Yb-implanted InP samples were studied under pulsed and cw excitations using an Ar+-ion laser (above band-gap excitation) at different temperatures and excitation intensities. The photoluminescence spectrum of the 4f transitions 2F5/2–2F7/2 consists of a sharp peak at 1001 nm and broader peaks in the spectral range between 1002.5 and 1010 nm. Time-resolved spectra were recorded at different temperatures. Using a tunable Ti:sapphire laser (above and below band-gap excitation) the photoluminescence excitation spectra were investigated for different emission lines. Study of the rise and decay time under intrinsic excitation (band to band) show that the rise time is a function of excitation intensity, which reflects an indirect excitation process for Yb3+. The experimental data are explained using a kinetics model of energy transfer from the host lattice to the localized core excited states of rare-earth isoelectronic structured traps. The numerically simulated luminescence rise and decay times show a good general quantitative agreement with experimental data, over a wide range of generation rates. The photoluminescence spectra and decay time were also studied as a function of temperature. A quenching mechanism of ytterbium luminescence involving Yb and Fe ions is proposed. Finally, the electric-field quenching of InP:Yb photoluminescence is investigated.
We report on the results of optical-pumping experiments in GaP doped with the isoelectronic impurity nitrogen. In the first experiment we have measured the saturation of absorption at the AAA bound exciton as a function of pump intensity, using as the pump a pulsed dye laser tuned to the AAA line. The observed saturation behavior is in quantitative accord with a simple three-level system involving the AAA and BBB bound-exciton level and the N ground state. The second experiment involves measuring the absorption at the AAA line with a weak probe (a tunable dye laser) while the crystal is being pumped with an intense pump dye laser tuned above the indirect gap. In this case also the absorption saturates with increasing pump power and we can infer approximately 10% efficiency for the capture of excitons at N impurities. In this second experiment, a simple model predicts an amplification by a factor of 8.5 but none is observed. We conclude from these measurements that, when pumped above the indirect gap, the dominant excited state of N impurities in our crystal is a single electron trapped at N. We believe that this is caused by the presence of other impurities in the crystal and is not an intrinsic limitation of the system.
The three-dimensional confinement created by the ultrasmall semiconductor structures known as quantum dots greatly modifies the optical properties of the spatially localized carriers. These systems are presently of great interest to the research community, both for the improved understanding of the physics of confined structures, and for the potential applications of these systems to areas such as optoelectronics and quantum computing. Here, the techniques of transient coherent nonlinear optical spectroscopy are applied to the investigation of excitons confined within InAs/GaAs self-assembled quantum dots. These methods provide a powerful tool for the study of dynamic processes in these novel materials. The nonlinear measurements are based on the differential transmission experimental geometry, and utilize ultrafast pulsed lasers in order to temporally resolve the carrier dynamics after excitation. The experiments performed here are resonant with the ground state absorption of the quantum dots, as evidenced by comparison with the photoluminescence measurements which are used to characterize the sample. The incoherent relaxation dynamics of the population of photoexcited excitons are examined, allowing for a determination of both the lifetime of the excitons and the time scale for relaxation between the two polarization eigenstates of the system. The three-dimensional quantum confinement results in the suppression of these relaxation processes, as predicted. The use of coherent spectroscopic techniques allows for the first unambiguous demonstration of an optically-induced nonradiative Raman coherence in these quantum dots. Simultaneous excitation of both polarization states of the exciton results in a coherent superposition state, whose temporal evolution is observed through the homodyne-detection scheme. In these transient experiments, this is manifested as a beating in the nonlinear response, which allows us to directly measure the fine-structure splitting between the polarization states. Utilizing optical pulse shaping techniques, transient spectral hole burning is performed, which allows for the nonlinear response to be spectrally resolved. As expected for the strongly confined quantum dot excitons, the results show that diffusion among the localized states is not a significant effect. Temperature dependent measurements show that at elevated temperatures, extra dephasing processes, potentially related to acoustic phonon scattering, become important. Finally, this technique allows for the first direct observation of the induced absorption from the exciton to biexciton transition in these InAs quantum dots, and a measurement of the associated binding energy. These results lay the foundation for future studies in this material system, and for the possible development of quantum logic devices utilizing quantum dots.
In this work we have developed a kinetics model of energy transfer from the host lattice to the localized core excited states of rare-earth isoelectronic structured traps (REI traps). The presence of low-lying empty core orbitals in rare-earth impurities introduces new excitation and recombination phenomena. To adequately describe the energy transfer to a REI trap, the buildup and decay kinetics of rare-earth luminescence, we consider six separate states of the REI impurity (unoccupied, electron occupied, electron occupied excited, exciton occupied, excited electron occupied, and excited exciton occupied). The energy-transfer processes occur through an Auger mechanism where the recombination energy of the bound electron with a free hole is transferred nonradiatively to the core states, or energy can be transferred from the bound exciton on a REI trap to the core states. If the initial and final states are not resonant (in both mechanisms), the energy mismatch must be accommodated by emission or absorption of phonons. Furthermore we discuss details of several quenching processes, which are incorporated into the kinetics equations. We derive two sets of differential equations for semi-insulating and n-type semiconductors governing the kinetics of rare-earth luminescence. Equations have been solved by a numerical method to derive the time dependence of the rise and decay kinetics as a function of excitation intensity. The numerically simulated luminescence rise and decay times show a good overall quantitative agreement with experimental data obtained for InP:Yb, over a wide range of generation rates.