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Optics Express

All-optical switching for 10-Gb/s packet data by using an ultralow-power optical bistability of photonic-crystal nanocavities

Kengo Nozaki, Amédée Lacraz, Akihiko Shinya, Shinji Matsuo, Tomonari Sato, Koji Takeda, Eiichi Kuramochi, Masaya Notomi

Published Nov 12, 2015• 26 citations
Publisher

Abstract

An all-optical packet switching using bistable photonic crystal nanocavity memories was demonstrated for the first time. Nanocavity-waveguide coupling systems were configured for 1 × 1, 1 × 2, and 1 × 3 switches for 10-Gb/s optical packet, and they were all operated with an optical bias power of only a few μW. The power is several magnitudes lower than that of previously reported all-optical packet switches incorporating all-optical memories. A theoretical investigation indicated the optimum design for reducing the power consumption even further, and for realizing a higher data-rate capability and higher extinction. A small footprint and integrability are also features of our switches, which make them attractive for constructing an all-optical packet switching subsystem with a view to realizing optical routing on a chip.

DOI
10.1364/oe.23.030379

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An all-optical packet switching using bistable photonic crystal nanocavity memories was demonstrated for the first time. Nanocavity-waveguide coupling systems were configured for 1 × 1, 1 × 2, and 1 × 3 switches for 10-Gb/s optical packet, and they were all operated with an optical bias power of only a few μW. The power is several magnitudes lower than that of previously reported all-optical packet switches incorporating all-optical memories. A theoretical investigation indicated the optimum design for reducing the power consumption even further, and for realizing a higher data-rate capability and higher extinction. A small footprint and integrability are also features of our switches, which make them attractive for constructing an all-optical packet switching subsystem with a view to realizing optical routing on a chip.
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An InP photonic crystal nanocavity with an embedded InGaAsP active region is a unique technology that has realized an all-optical memory with a sub-micro-watt operating power and limitless storage time. In this study, we employed an L3 design with systematic multi-hole tuning, which realized a higher loaded Q factor (>40 000) and a lower mode volume (0.9 μm3) than a line-defect-based buried-heterostructure nanocavity (16 000 and 2.2 μm3). Excluding the active region realized a record loaded Q factor (210 000) in all for InP-based nanocavities. The minimum bias power for bistable memory operation was reduced to 2.3 ± 0.3 nW, which is about 1/10 of the previous record of 30 nW. This work further established the capability of a bistable nanocavity memory for use in future ultralow-power-consumption on-chip integrated photonics.
We review our recent progress on all-optical switching and bistability using ultrahigh-Q photonic crystal nanocavities. We also discuss all-optical logic gate operations. Because photonic crystal nanocavities can strongly confine photons in a small area for a long time, light can efficiently interact with dipoles. As a result, optical nonlinearities occur at a very low input. Optical nonlinearities are essential as regards all-optical switching and bistability, because they dynamically change such material properties as refractive index. We demonstrate all-optical switching at an operating energy of less than 100 fJ, and bistable operation at less than ~100 μW. In addition, these devices are small and so can operate at a reasonably high speed (~100 ps).