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Chinese Physics Letters

Manipulation of Ions in Microscopic Surface-Electrode Ion Traps

Wei Wan, Liang Chen, Haoyu Wu, Yi Xie, Fei Zhou, Mang Feng

Published Jul 1, 2013• 5 citations
Publisher

Abstract

The spatial manipulation of ionic qubits in a fast and precise fashion is one of the foremost issues in scalable quantum information processing with trapped ions. We report our recent efforts toward precise manipulation of trapped ions, including separation, recombination and reordering of the ions, in our home-made microscopic surface-electrode trap. We also demonstrate the micromotion compensation for the trapped ions by rf-photon cross-correlation, which ensures the cooling of the ions down to the temperature 23.3mK.

DOI
10.1088/0256-307x/30/7/073701

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The spatial manipulation of ionic qubits in a fast and precise fashion is one of the foremost issues in scalable quantum information processing with trapped ions. We report our recent efforts toward precise manipulation of trapped ions, including separation, recombination and reordering of the ions, in our home-made microscopic surface-electrode trap. We also demonstrate the micromotion compensation for the trapped ions by rf-photon cross-correlation, which ensures the cooling of the ions down to the temperature 23.3mK.
Excess micromotion can be a substantial source of errors in trapped-ion based quantum processors and clocks due to the sensitivity of the internal states of the ion to external fields and motion. This problem can be fixed by compensating background electric fields in order to position ions at the RF node and minimize their driven micromotion. Here we describe techniques for compensating ion chains in scalable surface ion traps. These traps are capable of cancelling stray electric fields with fine spatial resolution in order to compensate multiple closely spaced ions due to their large number of relatively small control electrodes. We demonstrate a technique that compensates an ion chain to better than 5 V/m and within 0.1 degrees of chain rotation.
We trap individual 171 Yb + ions in a surface trap microfabricated on a silicon substrate, and demonstrate a complete set of high fidelity single qubit operations for the hyperfine qubit. Trapping times exceeding 20 min without laser cooling, and heating rates as low as 0.8 quanta ms −1 , indicate stable trapping conditions in these microtraps. A coherence time of more than 1 s, high fidelity qubit state detection and single qubit rotations are demonstrated. The observation of low heating rates and demonstration of high quality single qubit gates at room temperature are critical steps toward scalable quantum information processing in microfabricated surface traps.
In this paper we try to develop a scalable surface-electrode architecture for ion trap quantum information processing. The confinement of the ions by the rf pseudopotential and the movement of the ions by changing the rf pseudopotential are investigated by numerical simulation. Particular concern is paid to the +-shaped junction, which is the connection of different components of the architecture, and also on the place which yields heat and escaping ions. We show the feasibility of fabricating and operating on the architecture for quantum information processing with currently available technology.
The trapped atomic ion qubits feature desirable properties for use in a quantum computer such as long coherence times, high qubit readout fidelity, and universal logic gates. While these essential properties have been demonstrated, the ability to scale a trapped ion quantum system has not yet been shown. The challenge of scaling the system calls for methods to realize high-fidelity logic gates in scalable trap structures. Surface electrode ion traps, that are microfabricated from a silicon substrate, provide a scalable platform for trapping ion qubits only if high-fidelity operations are achievable in these structures. Here, we present a system for trapping and manipulating ions in a scalable surface trap. Trapping times exceeding 20 minutes without laser cooling, and heating rates as low as 0.8 quanta/ms indicate stable trapping conditions in these microtraps. Coherence times of more than one second verify adequate qubit and control field stability. We demonstrate low-error single-qubit gates performed using stimulated Raman transitions driven by lasers that are tightly focused on the ion qubit. Digital feedback loops are implemented to control the driving field's amplitude and frequency. Gate errors are measured using a randomized benchmarking protocol for single qubit gates, where residual amplitude error in the control beam is compensated using various pulse sequence techniques. Using pulse compensation, we demonstrate single qubit gates with an average error per randomized Clifford group gate of 3.6(3)times10−43.6(3)\\times10^{-4}3.6(3)times10−4, which is below the fault-tolerant threshold for some error-correction schemes.