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Bulletin of the American Physical Society

Enhanced Coherence and High Figure of Merit in a Silicon Charge qubit

Zhan Shi, C. B. Simmons, Daniel R. Ward, Jonathan R. Prance, Teck Seng Koh, John King Gamble, Xian Wu, D. E. Savage, M. G. Lagally, Mark G. Friesen, S. N. Coppersmith, M. A. Eriksson

Published Mar 21, 2013• 0 citations
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Two closely spaced dangling bonds (DBs) positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the coherent dynamics of this qubit, its extremely high tunneling rate ∼10 14 s -1 greatly exceeds the expected decoherence rates for a silicon-based system, thereby overcoming a critical obstacle of charge qubit quantum computing (QC). We investigate possible configurations of DB qubits for QC devices. A first-order analysis of coherent dynamics of DBs shows promise in this respect.
We study Landau-Zener-St\"uckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterize the coherent charge-qubit dynamics in the strong-driving regime. The device is realized within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the system in a continuous nondemolition manner by measuring the dispersive response of a high-frequency electrical resonator coupled to the quantum system via the gate. By performing multiple fast passages around the qubit avoided crossing, we observe a multipassage LZSM interferometry pattern. At larger driving amplitudes, a projective measurement to an even-parity charge state is realized, showing a strong enhancement of the dispersive readout signal. At even larger driving amplitudes, two projective measurements are realized within the coherent evolution resulting in the disappearance of the interference pattern. Our results demonstrate a way to increase the state readout signal of coherent quantum systems and replicate single-electron analogs of optical interferometry within a CMOS transistor.