Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

International Conference on Ultrafast Phenomena

Role of the absolute optical phase in carrier-wave Rabi flopping with two-cycle pulses

Oliver D. Mücke, Thorsten Tritschler, Martin Wegener, Uwe Morgner, Franz X. Kärtner

Published Jan 1, 2002• 0 citations
Publisher

Abstract

When Rabi and light frequency become comparable, the Rabi doublets of the fundamental and the third harmonic meet around the second harmonic, giving rise to a signal which strongly depends on the absolute optical phase.
DOI
10.1364/up.2002.tud5

Related papers

Role of the absolute optical phase in carrier-wave Rabi flopping with two-cycle pulses

Oliver D. Mücke, Thorsten Tritschler, Martin Wegener +2 more

Springer series in chemical physics•Jan 1, 2003•0 citations

Influence of frequency detuning on carrier-wave Rabi flop-related phenomena in the extreme nonlinear optics regime

Chaojin Zhang, Wen Lu, Erheng Wu +1 more

The European Physical Journal D•Nov 1, 2018•5 citations

Signatures of carrier-wave Rabi flopping in GaAs

Oliver D. Mücke, Thorsten Tritschler, Martin Wegener +2 more

Summary form only given. Illuminating a semiconductor with a constant light intensity can lead to a periodic oscillation of the inversion, a phenomenon which is known as Rabi flopping. Using pulsed excitation, Rabi flopping has been observed on semiconductors and exhibited periods in the range from 100 fs to 1 ps. Hughes (Phys. Rev. Lett. vol. 81, p. 3363, 1998) theoretically investigated the question of what happens when the light intensity becomes so high that the period of one Rabi oscillation becomes comparable with that of only one cycle of light, 2.7 fs for the band edge of GaAs, and predicted a new phenomenon: carrier-wave Rabi flopping. During a carrier-wave Rabi oscillation, the optical polarization becomes strongly distorted, which can lead to a double-peak structure (the Fourier-transform of the Rabi oscillation) in the third-harmonic (3/spl omega/) spectra. This characteristic shape is quite different from the well-known off-resonant third-harmonic generation. Importantly, resonant effects contain information on the dynamics of electronic resonances-potentially on the timescale of a single optical cycle. It is clear that, under these conditions, the usual envelope approximation breaks down, i.e. both the rotating wave approximation (RWA) as well as the slowly varying envelope approximation (SVEA) must not be used. This paper investigates carrier-wave Rabi flopping experimentally.

Quantum Electronics and Laser Science Conference•Nov 13, 2002•3 citations

Carrier-wave Rabi flopping: role of the carrier-envelope phase

Oliver D. Mücke, Thorsten Tritschler, Martin Wegener +4 more

Recently, a dependence of Rabi flopping on the carrier-envelope phase of the exciting laser pulses was predicted theoretically [Phys. Rev. Lett. 89, 127401 (2002)] for excitation of a thin semiconductor film with intense few-cycle pulses. Here, we report corresponding experiments on 50-100-nm thin GaAs films excited with 5-fs pulses. We find a dependence on the carrier-envelope phase arising from the interference of sidebands from the fundamental or the third-harmonic Mollow triplet, respectively, with surface second-harmonic generation.

Optics Letters•Sep 15, 2004•51 citations

Role of phase in second-harmonic generation within an optical cavity (A)

Ling-An Wu, Harry J. Kimble

Journal of the Optical Society of America A•Jan 1, 1984•0 citations

The effect of electric field maximum on the Rabi flopping and generated higher frequency spectra

Yueping Niu, Ni Cui, Yang Xiang +3 more

We investigate the effect of the electric field maximum on the Rabi flopping and the generated higher frequency spectra properties by solving Maxwell–Bloch equations without invoking any standard approximations. It is found that the maximum of the electric field will lead to carrier-wave Rabi flopping (CWRF) through reversion dynamics which will be more evident when the applied field enters the sub-one-cycle regime. Therefore, under the interaction of sub-one-cycle pulses, the Rabi flopping follows the transient electric field tightly through the oscillation and reversion dynamics, which is in contrast to the conventional envelope Rabi flopping. Complete or incomplete population inversion can be realized through the control of the carrier-envelope phase (CEP). Furthermore, the generated higher frequency spectra will be changed from distinct to continuous or irregular with the variation of the CEP. Our results demonstrate that due to the evident maximum behavior of the electric field, pulses with different CEP give rise to different CWRFs, and then different degree of interferences lead to different higher frequency spectral features.

New Journal of Physics•Oct 31, 2008•2 citations
Summary form only given. Illuminating a semiconductor with a constant light intensity can lead to a periodic oscillation of the inversion, a phenomenon which is known as Rabi flopping. Using pulsed excitation, Rabi flopping has been observed on semiconductors and exhibited periods in the range from 100 fs to 1 ps. Hughes (Phys. Rev. Lett. vol. 81, p. 3363, 1998) theoretically investigated the question of what happens when the light intensity becomes so high that the period of one Rabi oscillation becomes comparable with that of only one cycle of light, 2.7 fs for the band edge of GaAs, and predicted a new phenomenon: carrier-wave Rabi flopping. During a carrier-wave Rabi oscillation, the optical polarization becomes strongly distorted, which can lead to a double-peak structure (the Fourier-transform of the Rabi oscillation) in the third-harmonic (3/spl omega/) spectra. This characteristic shape is quite different from the well-known off-resonant third-harmonic generation. Importantly, resonant effects contain information on the dynamics of electronic resonances-potentially on the timescale of a single optical cycle. It is clear that, under these conditions, the usual envelope approximation breaks down, i.e. both the rotating wave approximation (RWA) as well as the slowly varying envelope approximation (SVEA) must not be used. This paper investigates carrier-wave Rabi flopping experimentally.
Recently, a dependence of Rabi flopping on the carrier-envelope phase of the exciting laser pulses was predicted theoretically [Phys. Rev. Lett. 89, 127401 (2002)] for excitation of a thin semiconductor film with intense few-cycle pulses. Here, we report corresponding experiments on 50-100-nm thin GaAs films excited with 5-fs pulses. We find a dependence on the carrier-envelope phase arising from the interference of sidebands from the fundamental or the third-harmonic Mollow triplet, respectively, with surface second-harmonic generation.
We investigate the effect of the electric field maximum on the Rabi flopping and the generated higher frequency spectra properties by solving Maxwell–Bloch equations without invoking any standard approximations. It is found that the maximum of the electric field will lead to carrier-wave Rabi flopping (CWRF) through reversion dynamics which will be more evident when the applied field enters the sub-one-cycle regime. Therefore, under the interaction of sub-one-cycle pulses, the Rabi flopping follows the transient electric field tightly through the oscillation and reversion dynamics, which is in contrast to the conventional envelope Rabi flopping. Complete or incomplete population inversion can be realized through the control of the carrier-envelope phase (CEP). Furthermore, the generated higher frequency spectra will be changed from distinct to continuous or irregular with the variation of the CEP. Our results demonstrate that due to the evident maximum behavior of the electric field, pulses with different CEP give rise to different CWRFs, and then different degree of interferences lead to different higher frequency spectral features.