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New Journal of Physics

The effect of electric field maximum on the Rabi flopping and generated higher frequency spectra

Yueping Niu, Ni Cui, Yang Xiang, Ruxin Li, Shangqing Gong, Zhizhan Xu

Published Oct 31, 2008• 2 citations

Abstract

We investigate the effect of the electric field maximum on the Rabi flopping and the generated higher frequency spectra properties by solving Maxwell–Bloch equations without invoking any standard approximations. It is found that the maximum of the electric field will lead to carrier-wave Rabi flopping (CWRF) through reversion dynamics which will be more evident when the applied field enters the sub-one-cycle regime. Therefore, under the interaction of sub-one-cycle pulses, the Rabi flopping follows the transient electric field tightly through the oscillation and reversion dynamics, which is in contrast to the conventional envelope Rabi flopping. Complete or incomplete population inversion can be realized through the control of the carrier-envelope phase (CEP). Furthermore, the generated higher frequency spectra will be changed from distinct to continuous or irregular with the variation of the CEP. Our results demonstrate that due to the evident maximum behavior of the electric field, pulses with different CEP give rise to different CWRFs, and then different degree of interferences lead to different higher frequency spectral features.

DOI: 10.1088/1367-2630/10/10/103028

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Summary form only given. Illuminating a semiconductor with a constant light intensity can lead to a periodic oscillation of the inversion, a phenomenon which is known as Rabi flopping. Using pulsed excitation, Rabi flopping has been observed on semiconductors and exhibited periods in the range from 100 fs to 1 ps. Hughes (Phys. Rev. Lett. vol. 81, p. 3363, 1998) theoretically investigated the question of what happens when the light intensity becomes so high that the period of one Rabi oscillation becomes comparable with that of only one cycle of light, 2.7 fs for the band edge of GaAs, and predicted a new phenomenon: carrier-wave Rabi flopping. During a carrier-wave Rabi oscillation, the optical polarization becomes strongly distorted, which can lead to a double-peak structure (the Fourier-transform of the Rabi oscillation) in the third-harmonic (3/spl omega/) spectra. This characteristic shape is quite different from the well-known off-resonant third-harmonic generation. Importantly, resonant effects contain information on the dynamics of electronic resonances-potentially on the timescale of a single optical cycle. It is clear that, under these conditions, the usual envelope approximation breaks down, i.e. both the rotating wave approximation (RWA) as well as the slowly varying envelope approximation (SVEA) must not be used. This paper investigates carrier-wave Rabi flopping experimentally.

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We consider the population inversion in a two-level system generated by a sub-one-cycle pulse excitation. Specifically, we explore the effect that the time derivative of the pulse envelope has on the Rabi dynamics. Our analysis is based on a combination of analytical, perturbative, and nonperturbative treatments and is complemented by numerical simulations. We find a shortening of the Rabi inversion period and show that complete inversion is unobtainable under resonant, ultrashort pulse conditions. The impact of nonresonant and carrier-envelope phase-dependent effects on the dynamics of two-level and multilevel systems is studied numerically, and conditions for complete population inversion are derived.

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