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Quantum Electronics and Laser Science Conference

Breakdown of the area theorem: carrier-wave Rabi flopping of femtosecond optical pulses

Steven C. Hughes

Published Jan 20, 2003• 0 citations
Publisher

Abstract

Summary form only. The development of high-intensity ultrashort optical pulses has lead to a number of fascinating nonlinear optical propagation studies including Rabi flopping, self-induced transparency, and photon echo, to name but a few. Common to the description of these effects, is that their propagation phenomena can be described quite adequately by employing the appropriate coupled matter-Maxwell equations within the slowly-varying-envelope approximation (SVEA), i.e., the envelopes of the electromagnetic field and polarization are assumed to vary little over an optical period and wavelength. However, for several-cycle optical pulses this approximation becomes seriously questionable.

DOI
10.1109/qels.1999.807472

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Breakdown of the Area Theorem: Carrier-Wave Rabi Flopping of Femtosecond Optical Pulses

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By solving Maxwell's curl equations coupled to a two-level atom, a theoretical study of carrier-wave Rabi flopping of femtosecond optical pulses of only several carrier-cycles time duration is reported. For pulse areas of $2\ensuremath{\pi}$, the usual self-induced transparency regime is essentially recovered. However, for larger pulse areas, carrier-wave Rabi flopping occurs that manifests in local carrier reshaping and subsequently to the production of significantly higher spectral components on the propagating pulse. These new features are not predicted by employing the area theorem or a slowly-varying-envelope approximation for the amplitude and phase terms---which is the usual approach.

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Summary form only given. Illuminating a semiconductor with a constant light intensity can lead to a periodic oscillation of the inversion, a phenomenon which is known as Rabi flopping. Using pulsed excitation, Rabi flopping has been observed on semiconductors and exhibited periods in the range from 100 fs to 1 ps. Hughes (Phys. Rev. Lett. vol. 81, p. 3363, 1998) theoretically investigated the question of what happens when the light intensity becomes so high that the period of one Rabi oscillation becomes comparable with that of only one cycle of light, 2.7 fs for the band edge of GaAs, and predicted a new phenomenon: carrier-wave Rabi flopping. During a carrier-wave Rabi oscillation, the optical polarization becomes strongly distorted, which can lead to a double-peak structure (the Fourier-transform of the Rabi oscillation) in the third-harmonic (3/spl omega/) spectra. This characteristic shape is quite different from the well-known off-resonant third-harmonic generation. Importantly, resonant effects contain information on the dynamics of electronic resonances-potentially on the timescale of a single optical cycle. It is clear that, under these conditions, the usual envelope approximation breaks down, i.e. both the rotating wave approximation (RWA) as well as the slowly varying envelope approximation (SVEA) must not be used. This paper investigates carrier-wave Rabi flopping experimentally.

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Summary form only. The development of high-intensity ultrashort optical pulses has lead to a number of fascinating nonlinear optical propagation studies including Rabi flopping, self-induced transparency, and photon echo, to name but a few. Common to the description of these effects, is that their propagation phenomena can be described quite adequately by employing the appropriate coupled matter-Maxwell equations within the slowly-varying-envelope approximation (SVEA), i.e., the envelopes of the electromagnetic field and polarization are assumed to vary little over an optical period and wavelength. However, for several-cycle optical pulses this approximation becomes seriously questionable.
By solving Maxwell's curl equations coupled to a two-level atom, a theoretical study of carrier-wave Rabi flopping of femtosecond optical pulses of only several carrier-cycles time duration is reported. For pulse areas of $2\ensuremath{\pi}$, the usual self-induced transparency regime is essentially recovered. However, for larger pulse areas, carrier-wave Rabi flopping occurs that manifests in local carrier reshaping and subsequently to the production of significantly higher spectral components on the propagating pulse. These new features are not predicted by employing the area theorem or a slowly-varying-envelope approximation for the amplitude and phase terms---which is the usual approach.
Summary form only given. In our recent experiments on the model semiconductor GaAs using 5 fs pulses, the Rabi period became as short as 3 fs, which is comparable to the period of light of 2.9 fs at the GaAs band edge. Hence, the medium's dynamics significantly distort the optical polarization within one optical cycle, which can be measured by a characteristic shape of the harmonics of the emitted light. In this paper we summarize our efforts to obtain a detailed understanding of these experiments by simulations based on a finite difference time-domain algorithm, solving the coupled Maxwell-Bloch equations in one dimension without using either the rotating wave approximation or the slowly varying envelope approximation. We consider not only transitions close to the band edge but also transitions up to 5.8 eV photon energy in a realistic fashion, i.e. comprising the known E/sub 1/ and E/sub 2/ resonances in GaAs which are due to band structure effects.
Resonant absorption in a laser pulse can be reduced to zero if the trailing part induces stimulated emission and returns the absorbed energy back to the pulse. This kind of effect is called Self-Induced Transparency (SIT). Analytic descriptions of short pulse propagation in a resonant medium, based on Slowly Varying Envelope Approximation (SVEA) and in linear media, have been extended in studies of SIT along two principal directions: First, to improve the SVEA by introducing Short Pulse Approximation (SPA); and second, to consider the effect of nonlinear refractive index.
Summary form only given. Illuminating a semiconductor with a constant light intensity can lead to a periodic oscillation of the inversion, a phenomenon which is known as Rabi flopping. Using pulsed excitation, Rabi flopping has been observed on semiconductors and exhibited periods in the range from 100 fs to 1 ps. Hughes (Phys. Rev. Lett. vol. 81, p. 3363, 1998) theoretically investigated the question of what happens when the light intensity becomes so high that the period of one Rabi oscillation becomes comparable with that of only one cycle of light, 2.7 fs for the band edge of GaAs, and predicted a new phenomenon: carrier-wave Rabi flopping. During a carrier-wave Rabi oscillation, the optical polarization becomes strongly distorted, which can lead to a double-peak structure (the Fourier-transform of the Rabi oscillation) in the third-harmonic (3/spl omega/) spectra. This characteristic shape is quite different from the well-known off-resonant third-harmonic generation. Importantly, resonant effects contain information on the dynamics of electronic resonances-potentially on the timescale of a single optical cycle. It is clear that, under these conditions, the usual envelope approximation breaks down, i.e. both the rotating wave approximation (RWA) as well as the slowly varying envelope approximation (SVEA) must not be used. This paper investigates carrier-wave Rabi flopping experimentally.
Abstract The phenomena of Rabi oscillations, resonant pulse propagation, and photon echo in semiconductors are investigated by numerically solving the full semiconductor Bloch equations for the example of bulk CdSe. The calculations are done for resonant femtosecond excitation at the exciton resonance. The many‐body modifications of Rabi flopping and semiconductor photon echo are discussed for a thin medium, whereas the propagation of weak and strong pulses is analyzed for an extended material. Rabi flopping of the density can lead to field reamplification and thus to long propagation distances of sufficiently strong pulses and to pulse break‐up. The area theorem known from self‐induced transparency (SIT) in atomic systems is generalized for the case of phase modulated fields and shown to be modified significantly in semiconductors. Even though no ideal SIT occurs, the Coulomb interacting electron–hole system nevertheless seems to support extremely long propagation distances of so‐called π‐pulses.