Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

ORA review team

Investigation of the dynamic range of superconducting nano-bridge switches

Boon-Kok Tan, G. Yassin, Ernst Otto, L. S. Kuzmin

Published Jan 1, 2015• 3 citations
OpenAlex

Abstract

We present the design of planar superconducting on/off switch comprising a number of high normal resistance nano-bridges deposited across a the slot of a unilateral finline. We have simulated the performance of this device and have shown that it has a much larger dynamic range than a single nano-bridge fabricated from the same material (Niobium Nitride, NbN). The response of a single bridge device was measured either directly using a terahertz power meter or by using superconductor-insulator-superconductor (SIS) device as direct detector. In either method, we have demonstrated good agreement between simulations and measurements, and therefore confirmed the integrity of our analysis of the device performance. We have recently designed and fabricated multiple nano-bridges superconducting switches using 50m thick NbN film. The measurement of these devices is currently in progress and we expect to report the results in the forthcoming ISSTT conference in March.

Related papers

Experimental investigation of a twin-bridges superconducting switch

BK Tan, G. Yassin, F Boussahay +1 more

We present the design and some preliminary measured results of a planar superconducting on/off switch comprising two niobium nitride (NbN) bridges deposited across the slotline section of a unilateral finline. The two bridges are separated by a distance of λ/4, such that the superconducting impedance of the bridges could be cancelled out at the resonance frequency. Both the NbN bridges were switched from the superconducting state to the normal state via a bias current exceeding the critical current of the NbN film. A millimetre wave source calibrated with a terahertz power meter is used to illuminate the switch, and the response of the switch in each state was measured using a superconductor-insulator-superconductor (SIS) chip as a direct detector. Preliminary measured results agreed generally well with our simulations, especially when the multiple wave reflection effect is included in our model.

•Jan 1, 2017•0 citations

A superconducting millimetre switch with multiple nano-bridges

Boon-Kok Tan, G. Yassin, L. S. Kuzmin +3 more

In this paper, we describe the design of a planar superconducting on/off switch comprising a high normal resistance nano-bridge deposited across a slotline transmission line. We present preliminary experimental results measured at 220 GHz range, and we discuss in detail the various parameters that affect the performance of the planar on/off switch, including the optimum thickness required for the nano-bridge to achieve high dynamic range and low transmission loss. The analysis is done by combining the accurate superconducting surface impedance description with rigorous electromagnetic simulations, and comparing the simulated results with the measured performance of a previously fabricated on/off switch fed by a backto- back unilateral finline taper. Finally, we propose an improved method to further increase the dynamic range of the switch, by introducing a multi-bridge design to tune out the residual inductance of the nano-bridges.

•Jan 1, 2014•4 citations

Experimental Investigation of a Superconducting Switch at Millimeter Wavelengths

Boon-Kok Tan, G. Yassin, Ernst Otto +1 more

We present preliminary measured responses of a planar superconducting on/off switch operating at millimeter wavelengths. The superconducting switch, comprising three niobium nitride (NbN) bridges, is deposited across the slotline section of a back-to-back unilateral finline. The transmission characteristics of the superconducting switch illuminated by a millimeter source was measured using a superconductor-insulator-superconductor (SIS) tunnel junction as direct detector. The NbN bridges were switched from the superconducting state to the normal state by passing current through the bridges with magnitude that exceeds its critical current value. With this arrangement, we have measured a typical switching dynamic range of approximately 10 dB across the 205-240 GHz band, with the highest dynamic range of ~ 20 dB at 230 GHz. This demonstrated the successful operation of the multiple NbN bridges as a planar superconducting on/off switch.

IEEE Transactions on Terahertz Science and Technology•Dec 1, 2015•2 citations

Experimental investigation of a 220 GHz planar multiple bridges superconducting switch

Boon-Kok Tan, G. Yassin, Ernst Otto +1 more

We present preliminary measured responses of a planar superconducting on/off switch centred at the 220 GHz. The superconducting switch, comprising three niobium nitride (NbN) bridges, deposited across the slotline section of a back-to-back unilateral linline, made of a similar superconducting material. The transmission characteristics of the superconducting switch illuminated by a sub-millimetre source were measured using a superconductor-insulator-superconductor (SIS) chip as direct detector. The NbN bridges were switched from the super-conducting state to the normal state by a bias current exceeding the critical current of the bridges. With this arrangement, we have measured a switching dynamic range of ∼ 13 dB at 245 GHz, demonstrating the successful operation of the multiple NbN bridges planar superconducting on/off switch.

UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT)•Sep 1, 2015•1 citation

Fabrication and Characterization of Miniaturized NbN Superconducting Quantum Interference Devices With Nanobridge Junctions

Hao Wang, Lei Chen, Xiaoyu Liu +4 more

Reduction of the size of the superconducting quantum interference device (SQUID) ring structure improves its sensitivity to magnetic moments. Nanobridge junctions are advantageous for SQUID miniaturization. However, many planar SQUIDs with nanobridge junctions have shallow flux modulation depths because of their nonideal Josephson current-phase relationships. Here, we fabricated a three-dimensional niobium nitride (NbN) miniaturized SQUID in which the nanobridge junction structures are much thinner than the superconducting ring. We grew a thick superconducting NbN film on a silicon wafer and embedded an insulating slit in the middle of the film. By setting two thin nanobridge junctions across this insulating slit, we were able to manufacture NbN miniaturized SQUIDs that, in principle, can become nano-SQUIDs. The flux modulation depths of these devices reached 36% at 4.2 K. In addition, the fabricated devices show reversible current-voltage characteristics in the absence of any shunting resistance.

IEEE Transactions on Applied Superconductivity•Jan 18, 2017•10 citations

Nano-meter bridge with epitaxially deposited NbN on MgO film

Takashi Yamashita, K. Hamasaki, Yoshimitsu Kodaira +1 more

Nano-meter(nm)-bridges with high-Tcmaterials hold great technological interest because of their smaller capacitance and expected higher IoRn-product. They are promising especially for applications such as high speed logic and high frequency radiation detectors. Also they can operate over a wide temperature range and are stable against thermal cycles as are incorporating the refractory high-Tcsuperconductors. One of the essential ingredient for high quality bridges is to have NbN films. Ultra-thin NbN films have been prepared by rf reactive-sputtering. NbN films deposited epitaxially on rf sputtered MgO films have high superconducting transition temperature Tc. Tcvalue of the film with thickness of about 5nm was about 14K, and is much higher than those deposited on Al2O3films and Si substrates. Two types of nm-bridges were reproducibly fabricated with NbN films deposited epitaxially on MgO films. The obtained IoRn-products were in a range of 0.5 to 3.6mV. The microwave-induced voltage steps were observed up to the voltage comparable to IoRn- product. The dc and ac quantum effects of the dc SQUIDs were observed in quite wide range of temperature, 4.2 to 11.4K.

IEEE Transactions on Magnetics•Mar 1, 1985•13 citations
We present the design of planar superconducting on/off switch comprising a number of high normal resistance nano-bridges deposited across a the slot of a unilateral finline. We have simulated the performance of this device and have shown that it has a much larger dynamic range than a single nano-bridge fabricated from the same material (Niobium Nitride, NbN). The response of a single bridge device was measured either directly using a terahertz power meter or by using superconductor-insulator-superconductor (SIS) device as direct detector. In either method, we have demonstrated good agreement between simulations and measurements, and therefore confirmed the integrity of our analysis of the device performance. We have recently designed and fabricated multiple nano-bridges superconducting switches using 50m thick NbN film. The measurement of these devices is currently in progress and we expect to report the results in the forthcoming ISSTT conference in March.
We present the design and some preliminary measured results of a planar superconducting on/off switch comprising two niobium nitride (NbN) bridges deposited across the slotline section of a unilateral finline. The two bridges are separated by a distance of λ/4, such that the superconducting impedance of the bridges could be cancelled out at the resonance frequency. Both the NbN bridges were switched from the superconducting state to the normal state via a bias current exceeding the critical current of the NbN film. A millimetre wave source calibrated with a terahertz power meter is used to illuminate the switch, and the response of the switch in each state was measured using a superconductor-insulator-superconductor (SIS) chip as a direct detector. Preliminary measured results agreed generally well with our simulations, especially when the multiple wave reflection effect is included in our model.
In this paper, we describe the design of a planar superconducting on/off switch comprising a high normal resistance nano-bridge deposited across a slotline transmission line. We present preliminary experimental results measured at 220 GHz range, and we discuss in detail the various parameters that affect the performance of the planar on/off switch, including the optimum thickness required for the nano-bridge to achieve high dynamic range and low transmission loss. The analysis is done by combining the accurate superconducting surface impedance description with rigorous electromagnetic simulations, and comparing the simulated results with the measured performance of a previously fabricated on/off switch fed by a backto- back unilateral finline taper. Finally, we propose an improved method to further increase the dynamic range of the switch, by introducing a multi-bridge design to tune out the residual inductance of the nano-bridges.
We present preliminary measured responses of a planar superconducting on/off switch operating at millimeter wavelengths. The superconducting switch, comprising three niobium nitride (NbN) bridges, is deposited across the slotline section of a back-to-back unilateral finline. The transmission characteristics of the superconducting switch illuminated by a millimeter source was measured using a superconductor-insulator-superconductor (SIS) tunnel junction as direct detector. The NbN bridges were switched from the superconducting state to the normal state by passing current through the bridges with magnitude that exceeds its critical current value. With this arrangement, we have measured a typical switching dynamic range of approximately 10 dB across the 205-240 GHz band, with the highest dynamic range of ~ 20 dB at 230 GHz. This demonstrated the successful operation of the multiple NbN bridges as a planar superconducting on/off switch.
We present preliminary measured responses of a planar superconducting on/off switch centred at the 220 GHz. The superconducting switch, comprising three niobium nitride (NbN) bridges, deposited across the slotline section of a back-to-back unilateral linline, made of a similar superconducting material. The transmission characteristics of the superconducting switch illuminated by a sub-millimetre source were measured using a superconductor-insulator-superconductor (SIS) chip as direct detector. The NbN bridges were switched from the super-conducting state to the normal state by a bias current exceeding the critical current of the bridges. With this arrangement, we have measured a switching dynamic range of ∼ 13 dB at 245 GHz, demonstrating the successful operation of the multiple NbN bridges planar superconducting on/off switch.
Reduction of the size of the superconducting quantum interference device (SQUID) ring structure improves its sensitivity to magnetic moments. Nanobridge junctions are advantageous for SQUID miniaturization. However, many planar SQUIDs with nanobridge junctions have shallow flux modulation depths because of their nonideal Josephson current-phase relationships. Here, we fabricated a three-dimensional niobium nitride (NbN) miniaturized SQUID in which the nanobridge junction structures are much thinner than the superconducting ring. We grew a thick superconducting NbN film on a silicon wafer and embedded an insulating slit in the middle of the film. By setting two thin nanobridge junctions across this insulating slit, we were able to manufacture NbN miniaturized SQUIDs that, in principle, can become nano-SQUIDs. The flux modulation depths of these devices reached 36% at 4.2 K. In addition, the fabricated devices show reversible current-voltage characteristics in the absence of any shunting resistance.
Nano-meter(nm)-bridges with high-Tcmaterials hold great technological interest because of their smaller capacitance and expected higher IoRn-product. They are promising especially for applications such as high speed logic and high frequency radiation detectors. Also they can operate over a wide temperature range and are stable against thermal cycles as are incorporating the refractory high-Tcsuperconductors. One of the essential ingredient for high quality bridges is to have NbN films. Ultra-thin NbN films have been prepared by rf reactive-sputtering. NbN films deposited epitaxially on rf sputtered MgO films have high superconducting transition temperature Tc. Tcvalue of the film with thickness of about 5nm was about 14K, and is much higher than those deposited on Al2O3films and Si substrates. Two types of nm-bridges were reproducibly fabricated with NbN films deposited epitaxially on MgO films. The obtained IoRn-products were in a range of 0.5 to 3.6mV. The microwave-induced voltage steps were observed up to the voltage comparable to IoRn- product. The dc and ac quantum effects of the dc SQUIDs were observed in quite wide range of temperature, 4.2 to 11.4K.