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NbN nanowire superconducting single photondetectors fabricated onMgO substrates

Francesco Marsili, David Bitauld, Alessandro Gaggero, Roberto Leoni, F. Mattioli, Stephanie V. Hold, M. Benkahoul, Francis Lévy

Published Jan 1, 2001• 0 citations
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We report on the fabrication and characterization of high performance nanowire superconducting single photon detectors (SSPD) on MgO substrates. The deposition of the superconducting material (NbN) has been performed by magnetron sputtering at 400°C. This deposition temperature is low enough to be compatible with the fabrication on traditional optical materials like GaAs. First, SSPD meanders covering a surface of 5 × 5 µm2 were characterized. We measured quantum efficiencies up to 20% at 1300 nm. Then, we used a straight 250 µm-long NbN nanowire to perform a spatially resolved measurement of the efficiency. Both efficiency dips and peaks were observed. The dips were correlated to lithographic defects, as confirmed by scanning electron microscopy. Conversely, no evidence of a lithographic origin of efficiency peaks was found.

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High sensitivity ultrafast nanowire superconducting single photon detectors (SSPD) in the near infrared wavelength range have been fabricated with ultrathin (3.5nm) NbN films grown on R-plane sapphire substrates by dc reactive magnetron sputtering in Ar+N2mixture. These results show for the first time that high performance NbN SSPDs can be realized on different substrates and at lower deposition temperature than previously reported, and opens the way to integration with advanced solid state optical structures. SSPDs have been fabricated by a two mask process using electron beam lithography and reactive ion etching on 3.5nm thick NbN films deposited under optimal conditions on MgO.
Superconducting nanowire single photon detectors (SNSPDs) based on Si substrates have demonstrated excellent performance, such as high efficiency, low dark count rate, short reset time and low timing jitter. But due to the lattice mismatch between NbN and Si substrate, the performance of film is limited. To this end, Nb5N6layer is fabricated as the buffer layer between the NbN film and Si substrate, and that will reduce the mismatch and optimize superconducting properties of NbN films. The 6nm-thick film with a 65 nm-thick buffer layer shows the zero resistance critical temperature (Tc0) of 13.27 K, which is 5 K higher than that without buffer. Based on the NbN film on the buffered substrate, we fabricated SNSPD devices demonstrate critical current (IC) of 65 μA which is 5 ~ 6 times higher to the detectors without buffer. Besides, the experiment results prove that the buffer layer reduces the kinetic inductance, which fasten the recovery of nanowire.
We report on the fabrication and characterization of high performance nanowire superconducting single photon detectors (SSPD) on MgO substrates. The deposition of the superconducting material (NbN) has been performed by magnetron sputtering at 400°C. This deposition temperature is low enough to be compatible with the fabrication on traditional optical materials like GaAs. First, SSPD meanders covering a surface of 5 × 5 µm2 were characterized. We measured quantum efficiencies up to 20% at 1300 nm. Then, we used a straight 250 µm-long NbN nanowire to perform a spatially resolved measurement of the efficiency. Both efficiency dips and peaks were observed. The dips were correlated to lithographic defects, as confirmed by scanning electron microscopy. Conversely, no evidence of a lithographic origin of efficiency peaks was found.