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Annual Review of Materials Science

HIGH-RESOLUTION SPECTROSCOPY OF IONS IN OPTICAL FIBERS

William S Brocklesby

Published Aug 1, 1993• 5 citations
Publisher

Abstract

Spectroscopy of ions in optical fibers is of particular interest for two distinct reasons. The first instance has become increasingly obvious as communications networks use active fiber elements as amplifiers in the 1.55µm band and progress toward a useful fiber amplifier in the 1.3µm band continues. These fiber amplifiers have greatly increased the scope of fiber communications, and the understanding of the detailed spectroscopy of rare-earth ions such as erbium in glass matrices has become increasingly important. Equally, the changes in optical properties of dopant ions on pulling fibers from bulk material is also important for the production of practical devices.

DOI
10.1146/annurev.ms.23.080193.001205

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Spectroscopy of ions in optical fibers is of particular interest for two distinct reasons. The first instance has become increasingly obvious as communications networks use active fiber elements as amplifiers in the 1.55µm band and progress toward a useful fiber amplifier in the 1.3µm band continues. These fiber amplifiers have greatly increased the scope of fiber communications, and the understanding of the detailed spectroscopy of rare-earth ions such as erbium in glass matrices has become increasingly important. Equally, the changes in optical properties of dopant ions on pulling fibers from bulk material is also important for the production of practical devices.
Research and development of nanoscale luminescent and laser materials are part of the rapidly advancing nanoscience and nanotechnology. Because of unique spectroscopic properties and luminescent dynamics of f-electron states, doping luminescent rare earth ions into nano-hosts has been demonstrated as an optimistic approach to developing highly efficient and stable nanophosphors for various applications. In this article, we review the most recent progress in spectroscopic measurements of rare earth ion-activated low-dimensional nanostructures including nanolayers, core-shells, nanowires, nanotubes, and nanodisks. Among a large volume of work reported in the literature on many members of the rare earth series including Ce3+, Pr3+, Nd3+, Eu3+, and Er3+, we focus on recent findings in the spectroscopic and luminescence properties of Eu3+ doped nanolayers, core-shells, and nanotubes, because Eu3+ ions have been extensively studied and widely used as an ideal probe for fundamental understanding of nano-phenomena. Specifically, the dependence of the optical properties of rare earth ions on nanostructures is discussed in detail.
In recent years, silicon photonics has achieved great success in optical communication area. More and more on-chip optoelectronic devices have been realized and commercialized on silicon photonics platform, such as silicon-based modulators, filters and detectors. However, on-chip light sources are still not achieved because that silicon is an indirect bandgap material. To solve this problem, the rare earth element erbium (Er) is considered, which emits light covering 1.5 μm to 1.6 μm and has been widely used in fiber amplifiers. Compared to Er-doped fiber amplifiers (EDFA), the Er ion concentration needs to be more than two orders higher for on-chip Er-based light sources due to the compact size integration requirements. Therefore, the choice of the host material is crucially important. In this paper, we review the recent progress in on-chip Er-based light sources and the advantages and disadvantages of different host materials are compared and analyzed. Finally, the existing challenges and development directions of the on-chip Er-based light sources are discussed.
Optical fiber communication is of great importance in information transmission. Increasing the transmission capacity of optical fiber systems is a solution to meet the increasing demand for information, in which rare earth ion-doped fiber amplifiers play an important role. In this paper, the quasi-quadruple-energy structure of is equated and simplified to a conventional triple-energy structure to improve amplification's efficiency and significance. By exploring the influence of many factors on the praseodymium-doped fiber amplifier, the amplification band with gain window between 1250-1350nm is verified, and the amplification of the central wavelength of 1310nm is realized. It provides a theoretical reference for the subsequent application of praseodymium-doped fiber amplifiers in communication engineering, laser amplification and other fields. Since the amplification band of praseodymium-doped fiber amplifier matches the zero dispersion point of 6.652 optical fiber, it will have a huge application market in the 1310nm optical communication system.