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IEEE Electron Device Letters

Superconductive magnetoelectric field-effect transistor

T.Y. Hsiang, Roman Sobolewski

Published May 1, 1989• 0 citations
Publisher

Abstract

A transistor-like three-terminal superconducting device-the superconductive magnetoelectric field-effect transistor (SMET)-is described. The SMET represents a field-controlled Josephson device with its control based on the magnetoelectric effect. The device is characterized by a very high input-output isolation because the input is strictly voltage-controlled. As such, it may be useful for interconnecting voltage-controlled semiconductor electronics with current-controlled superconducting devices. The design considerations are reviewed, and preliminary experimental results are presented. Possible other practical applications are also discussed.>

DOI
10.1109/55.31714

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A transistor-like three-terminal superconducting device-the superconductive magnetoelectric field-effect transistor (SMET)-is described. The SMET represents a field-controlled Josephson device with its control based on the magnetoelectric effect. The device is characterized by a very high input-output isolation because the input is strictly voltage-controlled. As such, it may be useful for interconnecting voltage-controlled semiconductor electronics with current-controlled superconducting devices. The design considerations are reviewed, and preliminary experimental results are presented. Possible other practical applications are also discussed.>
The development of three-terminal superconducting devices with transistor-like characteristics may be crucial for a number of applications of superconducting electronics. A three-terminal Josephson device which in principle could have gain, and which depends on the magnetoelectric effect is described. The magnetoelectric effect is a property of the antiferromagnetic phase of certain compounds. When an electric field is applied across a magnetoelectric material, a magnetization develops. If one Josephson junction of a two-junction, three-electrode sandwich contained a magnetoelectric barrier, a magnetic field would result if that junction were switched to the finite voltage state. This field, when coupled into the second junction, would cause it to switch from the zero-voltage to the finite voltage state. If the second junction had a larger critical current than the drive junction, then the three-terminal device would have gain.
A new design for a multi-terminal superconducting transistor-like device exploiting tunnelling injection of quasiparticles is proposed, in which parasitic back-action of the acceptor junction (S1IS2) bias current on the injector junction (S2FIS3) current–voltage characteristic (CVC) is dramatically reduced as compared with that for the formerly reported quiteron (here S, I, and F denote a superconductor, an insulator and a ferromagnetic material). Improvement of the isolation is achieved owing to the short electron mean free path and short coherence length in a thin F layer that screens the superconducting energy gap in the perturbed S2 layer preventing its manifestation in the CVC of the injector.
We report on the measurement results of the superconducting-ferromagnetic transistors (SFTs) made at Northwestern University and Hypres, Inc. [IEEE Trans. Appl. Supercond. vol. 24, 1800506 (2014); vol. 25, 1800705 (2015)]. SFT is a multi-terminal device with the SIS'FIFS structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material, respectively) exploiting intense quasiparticle injection in order to modify the non-linear I-V curve of a superconducting tunnel junction. Potentially, SFT is capable of providing voltage, current and power amplification while having good input/output isolation. We characterized the devices at frequencies up to 5 MHz at 4 K. Our setup did not allow for accurate measurement of the voltage gain of low-impedance SFT devices because of contribution of resistance of the bias-T connected in series with the SFT. Nevertheless we observed a voltage gain above unity for some measurement configurations. It is very interesting that we confirmed that the isolation between the input and output of the device is quite good. We suggest that further improvement of the SFT device parameters is possible in optimized devices, so that the device potentially may serve as a preamplifier for readout of output signals of cryogenic detectors and be useful as an element of other superconductor-based circuits.
We report experimental results on characteristics of SFIFS junctions and multiterminal SFIFSIS and SISFIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively). The SFIFS (SFIS) junctions serve as injectors in the SFIFSIS (SISFIS) devices, which have transistorlike properties; for this reason, we call them superconducting-ferromagnetic transistors. We have found the F (Ni) thickness at which the SFIFS current-voltage characteristic becomes linear. For three-terminal SFIFSIS devices, we focused on studying the influence of the injection current through the SFIFS junction on the maximum Josephson current of the SIS acceptor. For four-terminal SISFIS devices, we studied dependence of the transport current through the middle Nb electrode on injection current level through the SFIS junction. In both cases, we found that the output superconducting current (either Josephson or transport) can be efficiently modulated by the quasiparticle injection from SFIFS or SFIS input junction. The experiments indicate that, after optimization of the device parameters, they can be used as input/output isolators and amplifiers for memory, digital, and RF applications.
The superconducting transistor, or Josephson Field Effect Transistor (JoFET), is a versatile building block for ultra-low-power and high-energy-efficiency classical and quantum electronics. In a JoFET, the superconducting (zero-resistance) current is controlled by electrostatic gate voltage, which enables the scalability of solid-state quantum computers and the creation of next-generation superconducting integrated circuits (ICs). The development of JoFETs has so far been limited to single devices or a few-transistor circuits due to the lack of reproducible technological platform. Here, we report on technological progress of wafer-scale JoFET fabrication, achieving a 98% yield on a 150 mm wafer platform. Now that the large-scale and reproducible fabrication JoFETs has become feasible, we present behavioral and physics models as the required steps toward the design of novel JoFET-based ICs. Using the presented models, we obtain a good description of experimental data, thus paving the way for the design of next-generation superconducting ICs.