We report low-temperature measurements of electron decoherence time in a series of pure gold wires, 18 nm thick and 30 nm wide. At fields up to 15 T, large enough to polarize any concentration of magnetic impurity spins, conductance fluctuation measurements show almost no temperature dependence of the decoherence time below 300 mK, both in the correlation field for interference and the root-mean-square value of the fluctuations. Combined with previous low-field weak localization measurements on samples from similar material, our experiment suggests that the ubiquitous saturation of decoherence time in these samples is not due to any mechanism based on magnetic impurity spins.
We report low-temperature measurements of electron decoherence time in a series of pure gold wires, 18 nm thick and 30 nm wide. At fields up to 15 T, large enough to polarize any concentration of magnetic impurity spins, conductance fluctuation measurements show almost no temperature dependence of the decoherence time below 300 mK, both in the correlation field for interference and the root-mean-square value of the fluctuations. Combined with previous low-field weak localization measurements on samples from similar material, our experiment suggests that the ubiquitous saturation of decoherence time in these samples is not due to any mechanism based on magnetic impurity spins.
We point out that even at the absolute zero of temperature environmental decoherence limits the destructive interference between time-reversed paths for an electron in a disordered metal, and thus causes the leading (`weak localization') quantum correction to the conductivity to saturate at T=0. Our calculation, which is intended to be illustrative rather than complete, uses a model in which an electron interacts with the fluctuations of the mean voltage in the sample. The average of the fluctuations produces the steady damping well known in Brownian motion, introduces a direction of time, ensures that arbitrarily long time-reversed electron paths lose phase coherence, and is consistent with the experimental observation of a finite low temperature phase-breaking lifetime.
Molecular magnets are ideal systems to probe the realm that borders quantum and classical physics, as well as to study decoherence phenomena in nanoscale systems. The control of the quantum behavior of these materials and their structural characteristics requires synthesis of new complexes with desirable properties which will allow probing of the fundamental aspects of nanoscale physics and quantum information processing. Of particular interest among the magnetic molecular materials are single-molecule magnets (SMMs) and antiferromagnetic (AFM) molecular wheels in which the spin state of the molecule is known to behave quantum mechanically at low temperatures. In previous experiments the dynamics of the magnetic moment of the molecules is governed by incoherent quantum tunneling. Short decoherence times are mainly due to interactions between molecular magnets within the crystal and interactions of the electronic spin with the nuclear spin of neighboring ions within the molecule. This decoherence problem has imposed a limit to the understanding of the molecular spin dynamics and the sources of decoherence in condensed matter systems. Particularly, intermolecular dipolar interactions within the crystal, which shorten the coherence times in concentrated samples, have stymied progress in this direction. Several recent works have reported a direct measurement of the decoherence time in molecular magnets. This has been done by eliminating the dephasing created by dipolar interactions between neighboring molecules. This has been achieved by a) a dilution of the molecules in a liquid solution to decrease the dipolar interaction by separating the molecules, and b) by polarizing the spin bath by applying a high magnetic field at low temperatures. Unfortunately, both approaches restrict the experimental studies of quantum dynamics. For example, the dilution of molecular magnets in liquid solution causes a dispersion of the molecular spin orientation and anisotropy axes, while the large fields required to polarize the spin bath overcome the anisotropy of the molecular spin. In this thesis I have explored two methods to overcome dipolar interactions in molecular magnets: a) studying the dynamics of molecular magnets in single crystals where the separation between magnetic molecules is obtained by chemical doping or where the high crystalline quality allows observations intrinsic to the quantum mechanical nature of the tunneling of the spin, and b) studying the electronic transport through an individual magnetic molecule which has been carefully placed in a single-electron transistor device. I have used EPR microstrip resonators to measure Fe17Ga molecular wheels within single crystals of Fe18 AFM wheels, as well as demonstrating, for the first time in a Single Molecule Magnet, the complete suppression of a Quantum Tunneling of the Magnetization transition forbidden by molecular symmetry.
The aim of this review is to show how ``ferromagnetic'' states, that is, states having a fully polarization, can produce intrinsic decoherence by unitary evolution. This effect can give an understanding of recent experiments on mesoscopic devices as quantum point contacts showing the 0.7 conductance anomaly and the wide number of data about saturation of dephasing time observed at very low temperatures, as a fully polarized two dimensional electron gas. But similar effects can be seen in different area of physics as for example the Dicke model describing the interaction of two-level systems with a radiation mode. In this case one can show that decoherence is intrinsic and remove a Schrödinger cat state leaving a single coherent state, collapsing the wave function in the thermodynamic limit. So, saturation of dephasing time at low temperatures in mesoscopic devices can be understood by a fully polarized two dimensional electron gas that, by an exchange model, can be reduced to a generalized form of the Dicke Hamiltonian and where the quasiparticles are spin excitations interacting with magnons. In this way, one can see that several experiments on nanowires and quantum dots can be satisfactorily explained. The existence of intrinsic decoherence in the thermodynamic limit could have deep implications in fundamental problems like quantum measurement and irreversibility. Recent experiments with cavities with a large number of photons and with nuclear magnetic resonance in organic molecular crystals give a first strong support to this view.
We point out that the low temperature saturation of the electron phase decoherence time in a disordered conductor can be explained within the existing theory of weak localization provided the effect of quantum (high frequency) fluctuations is taken into account. Making use of the fluctuation-dissipation theorem we evaluate the quantum decoherence time, the crossover temperature below which thermal effects become unimportant, and the weak localization correction $\ensuremath{\delta}\ensuremath{\sigma}$ at T=0. For 1D systems the latter is found to be $\ensuremath{\delta}\ensuremath{\sigma}/\ensuremath{\sigma}\ensuremath{\propto}1/\sqrt{N}$, where N is the number of conducting channels.
Since the development of microsized devices is moving forward at enormous speed, there is huge amount of new industrial opportunities. However such devices also require high precision and understanding of the operating of their constituent parts up to the quantum level. The device of the purely quantum nature being developed so far is quantum computer. However the physical realization of it is still not performed, as the requirements for it are very rigorous. \n \nIn the pioneering work by Loss and DiVincenzo it was suggested to use a spin of electron placed in a quantum dot as an information qubit. Following this work the study of electron or hole spin qubits developed. Both experimental and theoretical tools for studying them greatly advanced. \n \nIn the first part of the thesis we study the phonon-induced decoherence and relaxation of singlet-triplet qubits in the double quantum dots. First of all we consider AlGaAs/GaAs double quantum dots. The important result we present here is the strong dephasing that occurs at large detuning. This dephasing is due to two-phonon process that affects mainly singlet state of the qubit and consequently changes the splitting between singlet and triplet leading to dephasing. Remarkably at small detuning this dephasing process is suppressed and the decoherence time is by orders of magnitude longer than in case of large detuning and is mainly defined by one-phonon process. We also present the dependence of relaxation time and decoherence time on the strength of spin-orbit interaction and different directions of the system. Our results provide a deeper insight into the recently obtained experimental data. \n \nWe also studied Si/SiGe quantum dots as a potential candidate for a qubit. Apart from the absence of hyperfine interaction and bulk spin-orbit interaction in the isotopically purified 28Si, its electron-phonon interaction is different from GaAs that also leads to longer qubit lifetimes. We study S-T− qubit near the anticrossing of the basis states. This particular region is interesting due to possibilities in operating the qubit. We show that the type of singlet plays a crucial role, i.e. whether it is a singlet with each dot singly occupied or a singlet with only one dot doubly occupied. Depending on the type of singlet the qubit lifetimes change by several orders of magnitude. We also study the influence of a micromagnet, usually used in experiments to operate the qubit, on the relaxation time and decoherence time and present the regime where its effect is negligible. We suggest how to test experimentally our theory of one-phonon and two-phonon processes separately. We also show how the relaxation and decoherence time depend on different system parameters for S-T0 qubits. \n \nThe second part of the thesis is devoted to the other important constituent part of microsized devices, namely nanowires. We are interested in the dynamic of polarization of localized spins in the nanowires, as it can affect such important device characteristics as e.g. conductance. \n \nWe studied Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction-induced polarization in the nanowire in case when the voltage is applied to it. It was already proposed theoretically that in the ground state the localized spins in 1D systems align in a helix due to RKKY interaction. This polarization is still present until some critical temperature. The presence of such polarization acts as a spin filter for electrons, that most likely affects the conductance of the nanowire. Therefore we studied how this helical polarization changes when the voltage is applied. The key result is the appearance of the uniform polarization perpendicular to the helix plane, that occurs due to backscattering of electrons that is accompanied by flip-flop process with localized spins. When this uniform polarization is formed, the helix starts to rotate as a whole around the direction of the uniform polarization. We present the dependence of polarization of the localized spins on temperature and voltage. Remarkably the uniform polarization grows both with voltage and temperature in the given range of parameters. \n \nWe also considered the electron-induced relaxation of the nuclear spins. As the electron spins and nuclear spins interact via hyperfine interaction, the nuclear relaxation time reflects some properties of electron bath. Namely, we see a strong dependence of nuclear relaxation time on spin-orbit interaction strength. We present here the dependence of the nuclear relaxation time on the external magnetic field and chemical potential of the wire, that can be experimentally varied via gate. The dependences for the strong spin-orbit interaction and for the weak one are substantially different. Moreover, they have distinct peaks, that allow to get the value of spin-orbit interaction amplitude with the high precision.
We herein probe the fundamental factors that induce decoherence in ensembles of molecular magnetic materials. This is done by pulse Electron Paramagetic Resonance measurements at X-band (9.6 GHz) on single crystals of Gd@Y(trensal) at 0.5, 10^-1 , 10^-2 and 10^-3 % doping levels, using Hahn echo, partial refocusing and CPMG sequences. The phase memory time, Tm, obtained by the Hahn echo sequence at X-band is compared to the one previously determined at higher frequency/magnetic field (240 GHz). The combined information from these experiments allows to gain insight into the contributions to decoherence originating from various relaxation mechanisms such as spin-lattice relaxation, electron and nuclear spin diffusion and instantaneous diffusion. We show that while at high magnetic fields Tm is limited by spin-lattice relaxation seemingly attributed to a direct process, at lower fields the limiting factor is spectral diffusion. At X-band, for Gd@Y(trensal) we determine a Tm in the range 1 – 11 μs, at 5 K, depending on the magnetic field and concentration of Gd(trensal) in the isostructural diamagnetic host Y(trensal). Importantly, Gd@Y(trensal) displays measurable coherence at temperatures above liquid nitrogen ones, with 125 K being the upper limit. At the lowest dilution level of 10^-3 %, and under dynamic decoupling conditions, the ratio of Tm versus the time it takes t0 implement a quantum gate, TG, reaches the order of 104, in the example of a single qubit π-rotation, which corresponds to a gate fidelity of 99.99 %, reaching thus the lower limit for implementations in Quantum Information Technologies.