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IEEE Journal of Quantum Electronics

Spontaneous emission coupling to radiation and guided modes of planar waveguide structures

C. Janz, J.N. McMullin

Published Jul 1, 1995• 5 citations
Publisher

Abstract

A general analysis of spontaneous emission in the vicinity of a symmetric slab dielectric waveguide is presented using explicit energy-normalized functions for the complete set of bound and radiating TE and TM modes. Expressions for the spontaneous emission rates are derived for each mode type, and calculated results are presented illustrating the emission behavior as a function of the position of the radiating atom, for various slab waveguides. The model is used to analyze the spontaneous emission coupling efficiency to guided modes in planar erbium-doped amplifier structures. Spontaneous emission factors for the TE and TM modes are calculated for the cases of erbium doping of the core and of the cladding.>

DOI
10.1109/3.391100

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A general analysis of spontaneous emission in the vicinity of a symmetric slab dielectric waveguide is presented using explicit energy-normalized functions for the complete set of bound and radiating TE and TM modes. Expressions for the spontaneous emission rates are derived for each mode type, and calculated results are presented illustrating the emission behavior as a function of the position of the radiating atom, for various slab waveguides. The model is used to analyze the spontaneous emission coupling efficiency to guided modes in planar erbium-doped amplifier structures. Spontaneous emission factors for the TE and TM modes are calculated for the cases of erbium doping of the core and of the cladding.>
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The spontaneous emission of photons by an atom placed near the dielectric slab is analyzed using global free electromagnetic modes, satisfying necessary continuity conditions at the slab boundaries. These modes include the modes extended over the whole space (traveling) and the modes trapped to a waveguide formed by the slab (trapped). To describe angular properties of spontaneous emission a parametrization of the traveling modes by the outgoing waves has been proposed. Angular characteristics of the traveling photon emission, distributions of the trapped photon emission, as well as global decay rates have been calculated using the quantum approach and standard perturbation theory. Enhancement and suppression of radiative decay rates in various configurations have been shown. A certain calculational error in an earlier paper by Khosravi and Loudon [Proc. R. Soc. London Ser. A 436, 373 (1992)] affecting thin slabs and results near waveguide-mode thresholds has been improved.
We present a quantum-electrodynamical formalism to study the spontaneous emission from dipoles embedded in a non-absorbing and lossless multilayer dielectric structure. In this model the electromagnetic field is quantized by a proper choice of a complete and orthonormal set of classical modes and the analytical expressions for the emission rates are obtained within the framework of perturbation theory. We apply our model to investigate the 1.54??m transition of Er3+-doped SiO2 thin layers acting as active material in planar slot waveguides in polycrystalline silicon. The theoretical results show that a strong reduction of the radiative lifetime does occur in the slot waveguide. Furthermore, by using the theoretical analysis together with photoluminescence measurements, we estimate also the radiative efficiency which is found to be only slightly reduced with respect to the value for Er3+ in a bulk of SiO2. These results are important for future realization of silicon-compatible active optical devices and show the relevance of our model to study the spontaneous emission processes in multilayer structures.
We present a quantum-electrodynamical formalism to study the spontaneous emission from dipoles embedded in a non-absorbing and lossless multilayer dielectric structure. In this model the electromagnetic field is quantized by a proper choice of a complete and orthonormal set of classical modes and the analytical expressions for the emission rates are obtained within the framework of perturbation theory. We apply our model to investigate the 1.54 μm transition of Er 3+ -doped SiO 2 thin layers acting as active material in planar slot waveguides in polycrystalline silicon. The theoretical results show that a strong reduction of the radiative lifetime does occur in the slot waveguide. Furthermore, by using the theoretical analysis together with photoluminescence measurements, we estimate also the radiative efficiency which is found to be only slightly reduced with respect to the value for Er 3+ in a bulk of SiO 2 . These results are important for future realization of silicon-compatible active optical devices and show the relevance of our model to study the spontaneous emission processes in multilayer structures.