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IEEE Journal of Quantum Electronics

A comparison of active and passive optical bistability in semiconductors

Matthew Adams, H.J. Westlake, M.J. O’Mahony, Ian D. Henning

Published Sep 1, 1985• 118 citations
Publisher

Abstract

A comparison is presented between optical bistability in laser amplifiers and in passive Fabry-Perot cavities. The basis for comparison is afforded by a new analysis of optical amplifiers which encompasses the cases of passive refractive and absorptive bistability as special limiting cases. The results indicate that amplifiers have advantages of lower input intensity requirements (by a factor of 103) and reduced sensitivity to wavelength by comparison with passive cavities; experimental results indicate an input power of -30 dBm is required for active bistability. Facet coating requirements for active and passive optimum configurations are also discussed.

DOI
10.1109/jqe.1985.1072818

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A comparison is presented between optical bistability in laser amplifiers and in passive Fabry-Perot cavities. The basis for comparison is afforded by a new analysis of optical amplifiers which encompasses the cases of passive refractive and absorptive bistability as special limiting cases. The results indicate that amplifiers have advantages of lower input intensity requirements (by a factor of 103) and reduced sensitivity to wavelength by comparison with passive cavities; experimental results indicate an input power of -30 dBm is required for active bistability. Facet coating requirements for active and passive optimum configurations are also discussed.
We present a review of optical bistability in active and passive optoelectronic devices, with particular reference to switching speeds and powers. The large resonant nonlinearities available near the bandgaps of semiconductors may be utilized to develop bistable devices operating at low powers and high speeds. Passive devices are driven by external optical sources and include nonlinear etalons, nonlinear interfaces, self-focusing configurations and electro-optic modulators with electrical feedback. Active devices include injection lasers and superluminescent amplifiers. Potential advantages of active devices include speed, gain, sensitivity and the ability to drive other devices, but complexity and high power dissipation may limit their use in applications requiring high density.
We demonstrate optically bistable (light switching light) operation in a room-temperature InGaAsP Fabry-Perot amplifier. The amplifier is an InGaAsP/InP laser structure biased at ~95% of its lasing threshold. It is switched with <3 μW of optical power provided by the mechanically chopped output of a quasi-single-mode InGaAsP/InP laser. The experimental apparatus is depicted in Fig, 1. A change in the refractive Index in the amplifier of only 5 × 10−4 is sufficient to cause switching. Input and output pulses from the nonlinear amplifier are shown in Fig. 2 when the source frequency is initially detuned by 14 GHz from the closest Fabry-Perot mode of the amplifier. Smaller switching powers are required at lesser detunings. The physical mechanism of the intensity-dependent change of the refractive index is thought to be the change in carrier density resulting from stimulated recombination of free carriers.
In Chapter 9 we discussed the case of a nonlinear cavity containing an active medium. In this framework, the outstanding phenomenon which arises is laser emission, and we calculated the stationary solutions for the ring laser. In this chapter, instead, we turn our attention to the passive nonlinear cavity and in this framework the outstanding phenomenon is optical bistability , i.e. the existence of two distinct stable stationary states that coexist for the same fixed values of the parameters in play. This phenomenon can arise also in the case of an active system contained in a cavity, as we have already noted in Section 9.1 and as we will discuss further in connection with the laser with injected signal, but it became popular from the studies of nonlinear passive optical cavities in the 1970s and 1980s. In contrast to the laser case, in the passive configuration we use an input coherent field, which is injected into the cavity. We discussed this case in Chapter 8 and derived a general equation for the transmission of the cavity (Eq. (8.23)), which we used for an empty cavity and for a linear cavity in Sections 8.4 and 8.5, respectively. In this chapter we will discuss the full nonlinear configuration. It is customary to identify two extreme cases of optical bistability called absorptive optical bistability and dispersive or refractive optical bistability . In both cases an essential ingredient to obtain the bistable behavior is the feedback action exerted by the mirrors of the cavity. In the purely absorptive configuration, in which there is exact resonance among the frequencies of the input field, of the atoms and of the cavity, the other essential ingredient is the saturable nonlinearity of the absorption. In the dispersive case, instead, the main feature is the nonlinearity of the refractive index. These two cases will be illustrated in Sections 11.1 and 11.2, respectively, both “exactly” and in the low-transmission limit.
Abstract Optical bistabilities have been considered to be useful for sensor applications. As a typical nonlinear device, Fabry-Perot semiconductor optical amplifiers (FPSOAs) exhibit bistability under certain conditions. In this paper, the bistable characteristics in FPSOAs are investigated theoretically. Based on Adams’s relationship between the incident optical intensity I in and the z -independent average intracavity intensity I av , an analytical expression of the bistable loop width in SOAs is derived. Numerical simulations confirm the accuracy of the analytical result.
We present an overview of the properties and applications of optical bistability in vertical-cavity semiconductor optical amplifiers (VCSOAs). The basic physics and analytical models of this optical nonlinearity are discussed. Experimental results obtained from a VCSOA operated in the 850 nm wavelength region are presented. Counterclockwise hysteresis loops are obtained over a range of initial phase detuning and bias currents. One hysteresis loop is observed experimentally with an input power as low as 2 muW when the device is biased at 98% of its lasing threshold. Numerical simulations based on the Fabry-Perot resonator model and rate equations we developed show good agreement with our experimental observations. In addition, a low input intensity high contrast (10:1) optical and gate and 2R regeneration are demonstrated. We believe that bistable VCSOAs can significantly advance the prospect of a dense two-dimensional array of low-switching-intensity all-optical logic and memory elements.