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High‐pressure effects on the intersubband optical absorption coefficient and relative refractive index change in an asymmetric double ‐doped GaAs quantum well

K.A. Rodríguez-Magdaleno, J.C. Martı́nez-Orozco, Isaac Rodríguez-Vargas, Miguel Eduardo Mora-Ramos, C.A. Duque

Published Mar 26, 2015• 10 citations
Publisher

Abstract

Abstract In the framework of the effective mass approximation and using a Thomas–Fermi‐like model for the conduction band potential energy profile, the effects of hydrostatic pressure on the linear and nonlinear intersubband optical response of an asymmetric double ‐doped quantum well are studied. In particular, the intersubband coefficients of light absorption and the relative refractive index change in the system were calculated. It is found that the pressure causes a redshift of the signal response as well as a reduction in the coefficients's amplitudes. We have also found that the asymmetry of the potential profile clearly affects the relative refractive index change because, as long as the system becomes more asymmetric, this physical property becomes diminished.

DOI
10.1002/pssb.201451444

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Abstract In the framework of the effective mass approximation and using a Thomas–Fermi‐like model for the conduction band potential energy profile, the effects of hydrostatic pressure on the linear and nonlinear intersubband optical response of an asymmetric double ‐doped quantum well are studied. In particular, the intersubband coefficients of light absorption and the relative refractive index change in the system were calculated. It is found that the pressure causes a redshift of the signal response as well as a reduction in the coefficients's amplitudes. We have also found that the asymmetry of the potential profile clearly affects the relative refractive index change because, as long as the system becomes more asymmetric, this physical property becomes diminished.
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We have examined theoretically how the temperature and the hydrostatic pressure affect the total optical absorption coefficients, the total refractive index changes, and the second harmonic generation coefficients for GaAs/GaAlAs zigzag quantum well structure. The diagonalisation method and the effective mass approximation have been used to obtain the numerical solution of the Schrödinger equation and energy levels, respectively. The analytical expressions of the optical properties were obtained by using the compact density matrix and iterative methods. When the temperature (hydrostatic pressure) is increased, the resonant peaks’ positions of the total optical absorption coefficients and the relative refractive index changes are shifted to higher energies/blueshift (lower energies/red-shift) with amplitude increment (decrement). Additionally, the resonant peak position of the second harmonic generation coefficient shifts to higher energies/blueshift (lower energies) and also decrease (increase) in magnitude with increasing temperature (hydrostatic pressure).
The properties of the electronic structure of a finite-barrier semiconductor multiple quantum well are investigated taking into account the effects of the application of a static electric field and hydrostatic pressure. With the information of the allowed quasi-stationary energy states, the coefficients of linear and nonlinear optical absorption and of the relative refractive index change associated to transitions between allowed subbands are calculated with the use of a two-level scheme for the density matrix equation of motion and the rotating wave approximation. It is noticed that the hydrostatic pressure enhances the amplitude of the nonlinear contribution to the optical response of the multiple quantum well, whilst the linear one becomes reduced. Besides, the calculated coefficients are blueshifted due to the increasing of the applied electric field, and shows systematically dependence upon the hydrostatic pressure. The comparison of these results with those related with the consideration of a stationary spectrum of states in the heterostructure-obtained by placing infinite confining barriers at a conveniently far distance-shows essential differences in the pressure-induced effects in the sense of resonant frequency shifting as well as in the variation of the amplitudes of the optical responses.
In this paper, we explore the optical properties of AlGaAs/GaAs semi-parabolic quantum well (QW) under different temperature, hydrostatic pressure and applied magnetic field. We calculate the nonlinear optical absorption coefficients and the refractive index changes (RICs) with the compact density-matrix approach and iterative method. Then, within the framework of the effective mass and parabolic-band approximations, the energy eigenvalues and the corresponding wave functions for semi-parabolic QW have been obtained by the finite difference method. The theoretical findings show that (1) the energy spectrum depends strongly on temperature, hydrostatic pressure and applied magnetic field; (2) the linear and third-order nonlinear optical absorption coefficients and the RICs are quite sensitive to temperature, hydrostatic pressure and applied magnetic field. Our study provides a theoretical basis for the fabrication of QW structure.
Abstract In this study, we thoroughly investigate the impacts of hydrostatic pressure, temperature, and position-dependent mass (PDM) on the nonlinear optical properties of asymmetric triple δ-doped GaAs quantum wells. Our analysis covers total optical absorption coefficients, relative refractive index changes, nonlinear optical rectification, second harmonic generation, and third harmonic generation. Initially, we employ PDM to solve the time-independent Schrödinger equation using the diagonalization method under effective mass and parabolic band approaches, considering pressure and temperature dependencies. Utilizing the first four energy eigenvalues and eigenfunctions, we apply the compact density matrix method to compute the system’s nonlinear optical properties numerically. The results indicate a shift in optical property peak positions toward lower (higher) energy spectra with increasing hydrostatic pressure (temperature). Furthermore, the influence of PDM shifts the system’s optical properties toward the higher energy spectrum, resembling the effect of temperature. From an experimental and theoretical perspective, one of the topics that researchers work on most is GaAs-based δ-doped systems (δ-doped heterojunction bipolar transistors, δ-doped field effect transistors, δ-multiple independent gate field effect transistors, etc.). We believe these findings will provide valuable insights for the researchers involved in GaAs-based δ-doped optoelectronic device design.
"The effect of hydrostatic pressure on the refractive index changes (RIC) is studied in ± -doped quantum well (DDQW) in GaAs. Based on the effective mass approximation we implement an algebraic formalism to calculate the electronic structure and RIC. Our results obtained with this model show that the position and the magnitude of the linear, nonlinear and total RIC are sensitive to hydrostatic pressure and bidimensional density. The incident optical intensity has a great effect on these optical quantities."