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Topics in applied physics

Dephasing Processes and Carrier Dynamics in (In,Ga)As Quantum Dots

Paola Borri, W. Langbein

Published Nov 4, 2003• 3 citations
Publisher
DOI
10.1007/978-3-540-39180-7_6

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We present an extensive experimental study of the exciton relaxation and dephasing in InGaAs quantum dots (QDs) in the temperature range from 10 K to 295 K. The QDs are embedded in the active region of an electrically pumped semiconductor optical amplifier. Ultrafast four-wave mixing and differential transmission spectroscopy on the dot ground-state transition are performed with a sensitive heterodyne detection technique. The importance of the population relaxation dynamics to the dephasing is determined as a function of injection current and temperature. Above 150 K dephasing processes much faster than the population relaxation are present, due to both carrier-phonon scattering and Coulomb interaction with the injected carriers. Only at low temperatures (<30 K) does population relaxation of multiexcitons in the gain regime fully determine the dephasing.