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IEEE Transactions on Microwave Theory and Techniques

Photon induced noise in the SIS detector

Noshir Dubash, G. Pance, Michael J. Wengler

Published Apr 1, 1994• 15 citations
Publisher

Abstract

The dominant source of noise in an SIS mixer is the noise in the photon-induced current. We have made accurate measurements of noise induced in SIS junctions by 95 GHz photons. The noise is measured at 1.5 GHz using a low-noise cryogenic measurement system. The measured photon-induced noise is compared to the noise predicted by Tucker's theory augmented by a vacuum/thermal noise term. For small to moderate rf powers, at which SIS mixers are operated, the measured noise is nearly perfectly predicted by this theory for all the devices measured. Measurements of series arrays of SIS junctions also agree with this theory showing that the noise of each SIS junction in the array is independent. At large rf powers, the measured noise was higher than the predicted noise, in devices with smaller capacitance. We also measured the noise in single junctions and arrays with no rf radiation. These measurements agreed very well with the predicted shot noise for most bias conditions.>

DOI
10.1109/22.285086

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Photon-induced current correlations in SIS detectors can result in an output noise that is greater or less than shot noise. Evidence of these correlations had been observed for 100 GHz rf by accurate noise measurements as reported in our previous work. We now present a detailed analysis of these current correlations for frequencies between 100 and 500 GHz. We also report new measurements of photon-induced noise in a 490 GHz SIS mixer, and discuss the Gaussian beam techniques used to eliminate the thermal background radiation. For small 490 GHz rf power, the output noise is equal to shot noise. The results of the 100 and 490 GHz photon noise measurement are summarized in context to shot noise and the effect of the current correlations predicted by the theoretical model.>

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The authors have made a detailed study of the gain and noise of a SIS (superconductor-insulator-superconductor) heterodyne receiver at 345 GHz. An array of two Nb-Al/sub 2/O/sub 3/-Nb SIS junctions in series are used as the mixing element. The array is operated in a waveguide mount with a backshort and an E-plane tuner. The best receiver noise temperature achieved is 140 K DSB (double sideband). The embedding impedances were determined by fitting theory to the measured pumped curves. High-quality fits were obtained, providing the first detailed test of the Tucker-theory at frequencies above 300 GHz. The impedances found by this method are in very good agreement with impedances measured in a scale model at 3.3 GHz. From these embedding impedances, the gain and noise of the mixer were calculated over a full bias range using the Tucker theory in the three-port low-IF approximation. The measured dependence of mixer gain and noise on bias voltage, pump power and embedding impedance is in good agreement with theory. However the absolute values show discrepancies that appear to be independent of the bias parameters of the mixer.>

IEEE Transactions on Microwave Theory and Techniques•Apr 1, 1993•14 citations
The dominant source of noise in an SIS mixer is the noise in the photon-induced current. We have made accurate measurements of noise induced in SIS junctions by 95 GHz photons. The noise is measured at 1.5 GHz using a low-noise cryogenic measurement system. The measured photon-induced noise is compared to the noise predicted by Tucker's theory augmented by a vacuum/thermal noise term. For small to moderate rf powers, at which SIS mixers are operated, the measured noise is nearly perfectly predicted by this theory for all the devices measured. Measurements of series arrays of SIS junctions also agree with this theory showing that the noise of each SIS junction in the array is independent. At large rf powers, the measured noise was higher than the predicted noise, in devices with smaller capacitance. We also measured the noise in single junctions and arrays with no rf radiation. These measurements agreed very well with the predicted shot noise for most bias conditions.>
Photon-induced current correlations in SIS detectors can result in an output noise that is greater or less than shot noise. Evidence of these correlations had been observed for 100 GHz rf by accurate noise measurements as reported in our previous work. We now present a detailed analysis of these current correlations for frequencies between 100 and 500 GHz. We also report new measurements of photon-induced noise in a 490 GHz SIS mixer, and discuss the Gaussian beam techniques used to eliminate the thermal background radiation. For small 490 GHz rf power, the output noise is equal to shot noise. The results of the 100 and 490 GHz photon noise measurement are summarized in context to shot noise and the effect of the current correlations predicted by the theoretical model.>
A fully quantum mechanical theory of diode mixers which includes quantization of the external circuit is presented. We find that Tucker's theory for SIS mixer conversion efficiencies is correct, but that his expression for the measurement noise must be augmented by an amount corresponding to half a photon at every frequency to which the mixer responds. Noise in high quality SIS mixers is shown to be accurately described by the conceptually simpler photodiode mixer noise theory. The radiation coupling efficiency term, η, which appears in photodiode theory turns out to be the coupling efficiency between the signal source admittance and the admittance which the SIS presents to the LO. Our theory reduces to Caves' quantum linear amplifier formalism, and therefore predicts measurement noises bounded by the quantum lower limit ofhv/k_{B}. Predictions of performance versus frequency for SIS's are made. We predict that NbN SIS's will behave as nearly ideal photodiodes for frequencies as high as 3000 GHz.
Development of two types of submillimeter-wave superconducting direct detectors are described. One is the SIS video detector and the other is the SIS photon detector. Using 500 GHz parallel connected twin junction device, video detector performance is eluted. High quantum efficiency in wide frequency range in submillimeter-wave and low noise performance is achieved. Noise equivalent power of 6 X 10-14 W/(root)Hz is measured at operating temperature of 1.5 K and bias voltage of 0.5 mV. Further improvements using distributed junction array is addressed. Large area niobium SIS junction (100 micrometer X 50 micrometer X 2) is used as a photon detection device and their thermal, electrical and optical performance is evaluated. Leakage current decrease more than three orders of magnitude at 0.5 K compared to that at 4.2 K. Noise of the device is limited by the shot noise.
We have constructed a 30-40 GHz test apparatus which allows us to measure the noise temperatures of SIS mixers with an accuracy of better than ±1K. This is a factor of six improvement over earlier measurements. The most accurate measurement made thus far of a mixer which uses a single Pb-alloy junction yielded Tm= 9.2 ± 0.9 K; and mixer gain: Gm= 0.240 ± 0.005. In addition, SIS mixers employing arrays of N = 1, 5, 10, 25, and 50 tunnel junctions in series have been tested. The input power required to saturate the array mixers was found to increase as N2and the gain and noise temperature of the array mixers were independent of N.
The authors have made a detailed study of the gain and noise of a SIS (superconductor-insulator-superconductor) heterodyne receiver at 345 GHz. An array of two Nb-Al/sub 2/O/sub 3/-Nb SIS junctions in series are used as the mixing element. The array is operated in a waveguide mount with a backshort and an E-plane tuner. The best receiver noise temperature achieved is 140 K DSB (double sideband). The embedding impedances were determined by fitting theory to the measured pumped curves. High-quality fits were obtained, providing the first detailed test of the Tucker-theory at frequencies above 300 GHz. The impedances found by this method are in very good agreement with impedances measured in a scale model at 3.3 GHz. From these embedding impedances, the gain and noise of the mixer were calculated over a full bias range using the Tucker theory in the three-port low-IF approximation. The measured dependence of mixer gain and noise on bias voltage, pump power and embedding impedance is in good agreement with theory. However the absolute values show discrepancies that appear to be independent of the bias parameters of the mixer.>