The amplitude-phase coupling of a stochastically varying field has been predicted to lead to a shift of the effective resonance frequency when this field interacts with a two-level system. Experimentally, we have generated such a field by passing a semiconductor laser beam through a Michelson interferometer, thereby converting part of the intrinsic phase flucutations into amplitude fluctuations. We find indeed a shifted resonance frequency when this beam interacts with the Rb ${\mathit{D}}_{2}$ transition. Depending on the path-length difference of the interferometer, shifts of more than 10 MHz have been measured. The experiments have been performed in the weak-field limit. This allows a convolution-type interpretation of the stochastic realization shift.The amplitude-phase coupling of a stochastically varying field has been predicted to lead to a shift of the effective resonance frequency when this field interacts with a two-level system. Experimentally, we have generated such a field by passing a semiconductor laser beam through a Michelson interferometer, thereby converting part of the intrinsic phase flucutations into amplitude fluctuations. We find indeed a shifted resonance frequency when this beam interacts with the Rb ${\mathit{D}}_{2}$ transition. Depending on the path-length difference of the interferometer, shifts of more than 10 MHz have been measured. The experiments have been performed in the weak-field limit. This allows a convolution-type interpretation of the stochastic realization shift.

Physical Review AApr 1, 19943 citations

Non-Markovian jump processes in lasers

Alfred M. Levine, Abraham G. Kofman, Reuven Zaibel +1 more

AIP conference proceedingsJan 1, 19890 citations

Optical bistability of a layered semiconductor in the exciton absorption region

K. Yu. Zenkova, Valeriy M. Kramar, N. K. Kramar +1 more

The effect of specific features of the exciton and phonon spectra of layered semiconductors on the conditions of realization of optical bistability in the exciton absorption region has been theoretically investigated by the Green’s function method. By the example of the 2 H polytype of PbI 2 , it is shown that effective exciton scattering from low-energy bending-wave vibrations leads to a blue shift of the frequency range of bistability realization and its narrowing; expansion of the temperature range of bistability observation; and a shift of the hysteresis loop to higher intensities, accompanied by a decrease in its height and width. The possibility of observing polarization optical bistability, which is related to the dependence of the exciton energy spectrum on the propagation direction of a light wave in a crystal, is also substantiated.The effect of specific features of the exciton and phonon spectra of layered semiconductors on the conditions of realization of optical bistability in the exciton absorption region has been theoretically investigated by the Green’s function method. By the example of the 2 H polytype of PbI 2 , it is shown that effective exciton scattering from low-energy bending-wave vibrations leads to a blue shift of the frequency range of bistability realization and its narrowing; expansion of the temperature range of bistability observation; and a shift of the hysteresis loop to higher intensities, accompanied by a decrease in its height and width. The possibility of observing polarization optical bistability, which is related to the dependence of the exciton energy spectrum on the propagation direction of a light wave in a crystal, is also substantiated.

Optics and SpectroscopyNov 1, 20066 citations

The peculiarities of optical bistability realization in the exciton absorption region of layer semiconductors

Oleksandr V. Derevyanchuk, Claudia Yu. Zenkova, Valeriy M. Kramar +1 more

The influence of the exciton and phonon spectra of layer semiconductors on the conditions of optical bistability (OB) realization in the exciton absorption region is investigated by means of the Green function method. Using the 2H-polytype PbI2 as an example, it has been found that an effective exciton scattering by an oscillation of the bending wave (BW) type leads to the short wave shift of the OB realization region, the decrease of its size, the widening of the OB observing temperature region and to the shift of the hysteresis loop in the direction of greater intensities, the decrease of its height and width. The possibility of observing the polarizable OB, connected with the direction of spreading and the insident light polarization dependence ofthe layer crystal exciton spectra is substantiated in this paper.The influence of the exciton and phonon spectra of layer semiconductors on the conditions of optical bistability (OB) realization in the exciton absorption region is investigated by means of the Green function method. Using the 2H-polytype PbI2 as an example, it has been found that an effective exciton scattering by an oscillation of the bending wave (BW) type leads to the short wave shift of the OB realization region, the decrease of its size, the widening of the OB observing temperature region and to the shift of the hysteresis loop in the direction of greater intensities, the decrease of its height and width. The possibility of observing the polarizable OB, connected with the direction of spreading and the insident light polarization dependence ofthe layer crystal exciton spectra is substantiated in this paper.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIEMay 19, 20061 citation

Stochastics in Some Quantum Optical Systems

C. Gerlach, F.‐J. Schütte, R. Tiebel

Springer eBooksJan 1, 19960 citations

{\mathit{D}}_{2}

transition. Depending on the path-length difference of the interferometer, shifts of more than 10 MHz have been measured. The experiments have been performed in the weak-field limit. This allows a convolution-type interpretation of the stochastic realization shift.