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IEEE Transactions on Applied Superconductivity

Flux-flow-type Josephson oscillator consisting of epitaxial NbCN/MgO/NbCN junction

Shogo Kiryu, Satoshi Kohjiro, Alexandre Shoji, Satoshi Kodaira, Junji Inatani, Shinji Sato

Published Mar 1, 1993• 6 citations
Publisher

Abstract

Flux-flow-type Josephson oscillators consisting of epitaxial NbCN/MgO/NbCN junctions were fabricated and their current-voltage (I-V) characteristics were measured in various magnetic fields to evaluate their oscillation characteristics. On the I-V curve for a fabricated oscillator, clear current steps were observed up to 3 mV, indicating that oscillation occurs up to 1.4 THz. Using a theoretical model, available output power for the oscillator was calculated to be in the range from 20 mu W to 40 mu W in the frequency range from 500 GHz to 1.2 THz.>

DOI
10.1109/77.233538

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Dynamics and Applications of Long Josephson Junctions

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The first object of this work is to theoretically study the effects of tunnel junction parameters on flux-flow Josephson oscillators (FFOs) by numerical simulation and to experimentally study the rf properties of FFOs by integrating them together with an SIS (superconductor-insulator-superconductor) mixer/detector on a chip. By using a CAD modeled integrated sub-mm wave receiver, the composite linewidth of two FFOs was measured to be less than 2.1 MHz in the band 280-330 GHz. The receiver consists of two identical FFOs and an SIS mixer. The linewidth was determined by mixing the two signals in the SIS mixer and analyzing the intermediate frequency. The output power coupled to a 10 .OMEGA. microstripline was about 0.5 µW, and could be adjusted by changing the current bias of the oscillator. The FFOs are connected to the SIS mixer via interdigital capacitors. The FFOs and the SIS element are made of Nb/NbOx/PbBi junctions by the "reactive ion beam oxidation" technique with the critical current density jc controlled by the oxidation time. Lift-off stencils for defining the junction sizes and the top-electrodes were made by using electron-beam writing on PMMA/Copolymer double layer resist. The jc of a long Josephson junction (LJJ) determines the fluxon motion. For LJJs which had jc > 1 kA/cm2, velocity-matching (VM, where the phase velocity of propagating fluxons equals that of the electromagnetic wave in the LJJ) steps could be tuned linearly from about 0.2 to 1.4 mV by an applied magnetic field. Coupled radiation at around 100 GHz (about 3 nW), 261 GHz (4.6 nW), and 330 GHz (0.43 µW), from flux-flow oscillations, was observed. From the step's steepness, the junction quality factor QJ is determined. QJ is between 4 to 7 in the voltage range of 0.4 to 1 mV. Coupled radiation (> 3 nW) at around 100 GHz corresponding to resonant soliton oscillation in low jc samples (250 to 1000 A/cm2) was detected. Simulations show that, for a uniform bias feed, the height of the VM step .gammam increases almost linearly with the external magnetic field .beta.e and the quasiparticle loss .alpha., but is less dependent on the surface loss .beta.. An approximate expression .gammam = a + .alpha(1+b).beta.e agrees with simulations. The maximum ac output voltage decreases with increasing dampings .alpha. and .beta.. It is important to include the .beta.-term in the mathematical model. The second part of this work is devoted to rf properties of long YBa2Cu3O7-.delta. (YBCO) grain boundary junctions made on 0- 32 °. [001]-tilt YSZ bicrystals. Josephson flux-flow resonances and Fiske resonances were observed. The first resonances could be tuned from about 0.5 to 2.0 mV in a 30 µm long junction at 16 K, and we determined the ratio between barrier thickness and relative dielectric constant td/.epsilon.r=2.9 Å and the loss .alpha.= 1.3 at 16 K. Simulations support the experimental observation that Josephson vortices can propagate unidirectionally in an overdamped, homogeneous junction up to .alpha.Ã? 2. From the Fiske resonances at 256-638 GHz, their Q-values, and the Steward-McCumber parameter, we find td/.epsilon.r=4 Å, the London penetration depth .gamma.L=145±5 nm and the surface resistance RS ~20 m.OMEGA. at 280 GHz. We conclude that the boundary is dielectric and the YBCO grains are well superconducting within 5-20 nm from the boundary. The dielectric between the grains could be part of a tunnel barrier and/or a matrix for filamentary conduction. Josephson flux-flow transitors based on long bicrystal junctions were made with an Au loop used as the control line. The line modulated the critical current Ic. Current gain larger than unity was obtained below 70 K. The gain increased with the junction length and varied roughly like the square root Ic when adjusting the temperature. A transresistance larger than 5 .OMEGA. was obtained at 15 K. Better performance is expected from junctions with high current densities.

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Satoshi Kohjiro, Z. Wang, S. V. Shitov +3 more

To develop an efficient local oscillator (LO) operating above 0.7 THz, the gap frequency of Nb, on a same chip with a SIS mixer, we have investigated the radiation power P of NbN-based flux-flow-type Josephson oscillators (FF0s). The designed and fabricated chip incorporates FF0s, SIS power detectors (DETs), and their coupling circuits. Both FFOs and DETs consist of epitaxial NbNIA1N/NbN junctions with high critical current density (15 200 nW, enough for the optimum pumping of a SIS mixer with if-resistance of 50 Q, is coupled to DETs in the frequency range of 0.5-0.9 THz. The coupling bandwidth is larger than 20% of its central frequency. In the band, the radiation frequency is tuned by the control current through the FFO in the range of 10-100 mA. The peak power >1 [AV is detected at 0.76THz. In addition, the dissipated power in a FFO is smaller than 500 [LW, which is less than 10 -4 of that of semiconductor sources. These experimental results indicate that FFOs with high-fc NbN/A1N1NbN junctions are applicable for an on-chip LO above 0.7 THz.

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Possible phase locking of vertically stacked Josephson flux-flow oscillators

Alexey Vladimirovich Ustinov, H. Kohlstedt, Christoph Heiden

A system of two vertically stacked Nb/Al-AlOx/Nb long Josephson junctions is studied experimentally. The magnetic coupling between the junctions is provided by their common electrode of the thickness d∼λL. The current-voltage characteristics of the stack displays resonant steps which are understood to be the phase-locked flux-flow resonances of the two junctions. These modes can be tuned by the magnetic field in a broad voltage range which corresponds to the Josephson frequencies between 150 and 600 GHz. Our observations suggest a possibility of application of the stacked long Josephson junctions as local oscillators for millimeter and submillimeter wave circuits.

Applied Physics Letters•Sep 12, 1994•49 citations
Flux-flow-type Josephson oscillators consisting of epitaxial NbCN/MgO/NbCN junctions were fabricated and their current-voltage (I-V) characteristics were measured in various magnetic fields to evaluate their oscillation characteristics. On the I-V curve for a fabricated oscillator, clear current steps were observed up to 3 mV, indicating that oscillation occurs up to 1.4 THz. Using a theoretical model, available output power for the oscillator was calculated to be in the range from 20 mu W to 40 mu W in the frequency range from 500 GHz to 1.2 THz.>
The first object of this work is to theoretically study the effects of tunnel junction parameters on flux-flow Josephson oscillators (FFOs) by numerical simulation and to experimentally study the rf properties of FFOs by integrating them together with an SIS (superconductor-insulator-superconductor) mixer/detector on a chip. By using a CAD modeled integrated sub-mm wave receiver, the composite linewidth of two FFOs was measured to be less than 2.1 MHz in the band 280-330 GHz. The receiver consists of two identical FFOs and an SIS mixer. The linewidth was determined by mixing the two signals in the SIS mixer and analyzing the intermediate frequency. The output power coupled to a 10 .OMEGA. microstripline was about 0.5 µW, and could be adjusted by changing the current bias of the oscillator. The FFOs are connected to the SIS mixer via interdigital capacitors. The FFOs and the SIS element are made of Nb/NbOx/PbBi junctions by the "reactive ion beam oxidation" technique with the critical current density jc controlled by the oxidation time. Lift-off stencils for defining the junction sizes and the top-electrodes were made by using electron-beam writing on PMMA/Copolymer double layer resist. The jc of a long Josephson junction (LJJ) determines the fluxon motion. For LJJs which had jc > 1 kA/cm2, velocity-matching (VM, where the phase velocity of propagating fluxons equals that of the electromagnetic wave in the LJJ) steps could be tuned linearly from about 0.2 to 1.4 mV by an applied magnetic field. Coupled radiation at around 100 GHz (about 3 nW), 261 GHz (4.6 nW), and 330 GHz (0.43 µW), from flux-flow oscillations, was observed. From the step's steepness, the junction quality factor QJ is determined. QJ is between 4 to 7 in the voltage range of 0.4 to 1 mV. Coupled radiation (> 3 nW) at around 100 GHz corresponding to resonant soliton oscillation in low jc samples (250 to 1000 A/cm2) was detected. Simulations show that, for a uniform bias feed, the height of the VM step .gammam increases almost linearly with the external magnetic field .beta.e and the quasiparticle loss .alpha., but is less dependent on the surface loss .beta.. An approximate expression .gammam = a + .alpha(1+b).beta.e agrees with simulations. The maximum ac output voltage decreases with increasing dampings .alpha. and .beta.. It is important to include the .beta.-term in the mathematical model. The second part of this work is devoted to rf properties of long YBa2Cu3O7-.delta. (YBCO) grain boundary junctions made on 0- 32 °. [001]-tilt YSZ bicrystals. Josephson flux-flow resonances and Fiske resonances were observed. The first resonances could be tuned from about 0.5 to 2.0 mV in a 30 µm long junction at 16 K, and we determined the ratio between barrier thickness and relative dielectric constant td/.epsilon.r=2.9 Å and the loss .alpha.= 1.3 at 16 K. Simulations support the experimental observation that Josephson vortices can propagate unidirectionally in an overdamped, homogeneous junction up to .alpha.Ã? 2. From the Fiske resonances at 256-638 GHz, their Q-values, and the Steward-McCumber parameter, we find td/.epsilon.r=4 Å, the London penetration depth .gamma.L=145±5 nm and the surface resistance RS ~20 m.OMEGA. at 280 GHz. We conclude that the boundary is dielectric and the YBCO grains are well superconducting within 5-20 nm from the boundary. The dielectric between the grains could be part of a tunnel barrier and/or a matrix for filamentary conduction. Josephson flux-flow transitors based on long bicrystal junctions were made with an Au loop used as the control line. The line modulated the critical current Ic. Current gain larger than unity was obtained below 70 K. The gain increased with the junction length and varied roughly like the square root Ic when adjusting the temperature. A transresistance larger than 5 .OMEGA. was obtained at 15 K. Better performance is expected from junctions with high current densities.
A theoretical study is made of a travelling-wave-type oscillator, which utilizes a flux flow in a long Josephson junction for use as a local oscillator in the integrated superconducting receiver system. An internal electromagnetic field of the oscillator junction in the flux-flow state is investigated both numerically and analytically. It is shown that the voltage amplitude of the internal oscillation increases gradually in the direction of the flux flow and reaches a maximum value at the junction end. An equivalent circuit of the oscillator is also obtained, which gives dependences of the emitted radiation on frequency, magnetic field, and load. It is shown that the output power attains the value of the order of 10−6 W in the frequency range between 100 and 500 GHz, and that the output power and the radiation frequency can be controlled by both the bias voltage and the applied magnetic field. These theoretical results explain quantitatively the experimental ones with a Pb-alloy long junction of length 24 λJ.
To develop an efficient local oscillator (LO) integrated with a SIS mixer operating above the gap frequency of Nb, we have investigated the radiation power P of NbN-based flux-flow-type Josephson oscillators (FFO's). The designed and fabricated chip incorporates FFO's, SIS power detectors (DET's), and their coupling circuits. Both FFO's and DET's consist of epitaxial NbN/AlN/NbN junctions with high critical current density J/sub C/ (15200 nW, enough for the optimum pumping of a SIS mixer with rf-resistance of 50 /spl Omega/, is coupled to DET's for 0.5-0.9 THz. The coupling bandwidth is larger than 20% of its central frequency. In the band, the radiation frequency is tuned by the control current through the FFO of 10-100 mA. The maximum coupling frequency of the present experiment is quantitatively agreed with the theoretical one. The peak power of 1.3 /spl mu/W is detected at 0.76 THz. The dissipated power in a FFO is smaller than 500 /spl mu/W, which is 10/sup -4/ times less than that of semiconductor sources. These results indicate the feasibility of NbN-based FFO's for a practical on-chip LO.
The Josephson Flux-Flow Oscillator (FFO) has been used as an on chip local oscillator at frequencies up to 650 GHz. The FFO linewidth of about 1 MHz was measured in the resonant regime V<915 /spl mu/V for niobium-aluminum oxide-niobium tunnel junctions, while considerably larger values were reported at higher voltages. To overcome this fundamental linewidth broadening we propose a novel on chip Cherenkov radiation flux-flow oscillator (CRFFO). It consists of a long Josephson junction and a superconducting slow wave transmission line that modifies essentially the junction dispersion relation. Two SIS detectors are connected both to the long Josephson junction and the transmission line to evaluate available microwave power. The output power coming both from the long junction and the transmission line is estimated at different bias conditions.
To develop an efficient local oscillator (LO) operating above 0.7 THz, the gap frequency of Nb, on a same chip with a SIS mixer, we have investigated the radiation power P of NbN-based flux-flow-type Josephson oscillators (FF0s). The designed and fabricated chip incorporates FF0s, SIS power detectors (DETs), and their coupling circuits. Both FFOs and DETs consist of epitaxial NbNIA1N/NbN junctions with high critical current density (15 200 nW, enough for the optimum pumping of a SIS mixer with if-resistance of 50 Q, is coupled to DETs in the frequency range of 0.5-0.9 THz. The coupling bandwidth is larger than 20% of its central frequency. In the band, the radiation frequency is tuned by the control current through the FFO in the range of 10-100 mA. The peak power >1 [AV is detected at 0.76THz. In addition, the dissipated power in a FFO is smaller than 500 [LW, which is less than 10 -4 of that of semiconductor sources. These experimental results indicate that FFOs with high-fc NbN/A1N1NbN junctions are applicable for an on-chip LO above 0.7 THz.
A system of two vertically stacked Nb/Al-AlOx/Nb long Josephson junctions is studied experimentally. The magnetic coupling between the junctions is provided by their common electrode of the thickness d∼λL. The current-voltage characteristics of the stack displays resonant steps which are understood to be the phase-locked flux-flow resonances of the two junctions. These modes can be tuned by the magnetic field in a broad voltage range which corresponds to the Josephson frequencies between 150 and 600 GHz. Our observations suggest a possibility of application of the stacked long Josephson junctions as local oscillators for millimeter and submillimeter wave circuits.