On-Chip Detection of Radiation Power from Flux-Flow Oscillators with Epitaxial and High-Jc NbN/A1N/NbN Junctions
Satoshi Kohjiro, Z. Wang, S. V. Shitov, Shigehito Miki, Akira Kawakami, Alexandre Shoji
Abstract
To develop an efficient local oscillator (LO) operating above 0.7 THz, the gap frequency of Nb, on a same chip with a SIS mixer, we have investigated the radiation power P of NbN-based flux-flow-type Josephson oscillators (FF0s). The designed and fabricated chip incorporates FF0s, SIS power detectors (DETs), and their coupling circuits. Both FFOs and DETs consist of epitaxial NbNIA1N/NbN junctions with high critical current density (15 200 nW, enough for the optimum pumping of a SIS mixer with if-resistance of 50 Q, is coupled to DETs in the frequency range of 0.5-0.9 THz. The coupling bandwidth is larger than 20% of its central frequency. In the band, the radiation frequency is tuned by the control current through the FFO in the range of 10-100 mA. The peak power >1 [AV is detected at 0.76THz. In addition, the dissipated power in a FFO is smaller than 500 [LW, which is less than 10 -4 of that of semiconductor sources. These experimental results indicate that FFOs with high-fc NbN/A1N1NbN junctions are applicable for an on-chip LO above 0.7 THz.