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IEEE Transactions on Applied Superconductivity

Influence and evaluation of parasitic inductance in shunted Josephson junctions

A. B. Cawthorne, C. B. Whan, Christopher J. Lobb

Published Jun 1, 1997• 8 citations
Publisher

Abstract

The shunt resistors used in many Josephson junction circuits contain an inductive component that can significantly degrade high-frequency performance. Numerical simulations reveal complex dynamical behaviour, including relaxation oscillations, period-doubling sequences, and chaos, all of which are serious problems for applications as high-frequency sources and detectors. This complex AC behaviour creates features in the simulated DC current-voltage characteristics. Since these simulations closely match experimental data, they can be used to investigate the high-frequency AC behaviour of real junctions. Thus, we are able to use simple DC measurements to observe evidence of complex high-frequency dynamics. The inductance of the shunt branch can be accurately determined by comparing simulations to measurements. Simulations also allow us to map regions of the parameter space which exhibit complicated behaviour. These regions should be avoided when a nearly sinusoidal voltage waveform is desired, as is the case for Josephson junction-based oscillators.

DOI
10.1109/77.621712

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The shunt resistors used in many Josephson junction circuits contain an inductive component that can significantly degrade high-frequency performance. Numerical simulations reveal complex dynamical behaviour, including relaxation oscillations, period-doubling sequences, and chaos, all of which are serious problems for applications as high-frequency sources and detectors. This complex AC behaviour creates features in the simulated DC current-voltage characteristics. Since these simulations closely match experimental data, they can be used to investigate the high-frequency AC behaviour of real junctions. Thus, we are able to use simple DC measurements to observe evidence of complex high-frequency dynamics. The inductance of the shunt branch can be accurately determined by comparing simulations to measurements. Simulations also allow us to map regions of the parameter space which exhibit complicated behaviour. These regions should be avoided when a nearly sinusoidal voltage waveform is desired, as is the case for Josephson junction-based oscillators.
We have measured Nb–AlOx–Nb Josephson tunnel junctions which have resistive shunts with different parasitic inductances. Numerical simulations reveal that specific features in the experimental current–voltage (I–V) characteristics of these devices are dc signatures of complex ac behavior. Depending on the inductance of the shunt loop and the capacitance of the junction, these features may either appear or disappear as the temperature of the device is increased. Examination of the simulated voltage waveforms allows us to map regions of the parameter space which exhibit complicated behavior. These regions should be avoided when a nearly sinusoidal voltage waveform is desired, as is the case for Josephson junction-based oscillators. The agreement of the experimental and simulated I–V curves also enables us to accurately determine the inductance of the shunts and the capacitance of the junctions.
In the design of electronic applications (for example, rapid single flux quantum (RSFQ) circuits), the properties of Josephson junctions (JJs) provided by technology are the major requirement. The characteristic voltage IcRn an dt he dynamic parameter βc are non-negligibly important, bu tt he external shunted junctions are only completely described by including the parasitic inductance between the junction area and the shunt resistor. The first publications of the RSFQ circuit technique were closely followed by many studies on the dynamic influence of this inductance. It has been pointed out that no practical value of this parameter has to be taken into account in the circuit design and optimization process. The operation of RSFQ logic circuits made of high-temperature superconductors (HTS) are strongly influenced by thermal noise. Our paper contains the determination of the digital bit-error rate for all different types of JJs by using a Fokker–Planck equation for describing the influence of thermal fluctuations. Ou ra nalysis shows that the parasitic inductance cannot be neglected in terms of noise. The intrinsic shunted junctions like high current density-, SINIS- and all kinds of HTS-JJs provide the best noise immunity for a fixed temperature.
Josephson junctions (JJs) with non-hysteretic I-V characteristic and high critical parameters are required for many applications; in particular, they are needed to create tunable THz range oscillators. We fabricated and studied shunted superconductor-insulator-superconductor (SIS) Nb-AlOx-Nb tunnel junctions with an area of about 1μm2, estimated their parameters, and compared them with theoretical models. To assess the performance of shunted junctions in the terahertz range, their characteristics were studied under the influence of a high-frequency signal; the estimated value of the characteristic voltage for the shunted junction at a high frequency is about 1 mV. To improve the circuit parameters, a new type of the shunting based on application of NIS junctions was proposed, which reduces the influence of parasitic inductance, expands the frequency range of the generator, and decreases the size of the structure. The JJs with a new type of shunting have been fabricated and studied. The niobium integrated circuits intended for matching the superconducting oscillator and an SIS junction as a microwave detector were designed, fabricated, and tested. Such structures are required for studying the spectral characteristics and analyzing the operation of the oscillator. The developed circuits have demonstrated efficient operation at frequencies from 300 to 700 GHz; the experimental results are in good agreement with the simulated characteristics. The results obtained will be implemented for further development of the THz range oscillators.
For a current-driven Josephson junction shunted by an Ohmic resistance, the dc voltage response and impedance to external high-frequency currents is calculated with a second-order perturbation method based on the unperturbed solution for the time evolution of the voltage as given by Aslamazov and Larkin. The response is proportional to signal power and has three characteristic-frequency regions depending on whether the internal self-generated Josephson frequency, ω0, is larger than, equal to, or smaller than the signal frequency, ω. For ω0< or >ω the response could be expressed by easily observable parameters of the dc voltage-current characteristics. This permits comparison of the predictions with experimental results obtained on point-contact junctions whose dc characteristics were only approximately represented by the simple model chosen for analysis. For ω0≪ω the response is found to be proportional to (i) the slope of the dc characteristic, (ii) the inverse square of the applied frequency, (iii) the inverse battery current in terms of the critical current, and (iv) the voltage amplitude of the inherent Josephson oscillations. For ω0≫ω ``classical'' detection proportional to curvature is obtained. For ω0∼ω resonance detection occurs, which depends to a considerable degree on fluctuations of the average contact voltage. These predictions are in reasonable agreement with experiments in which point-contact junctions were illuminated with klystron radiation at 10 and 90 GHz. Evidence is presented that the voltage fluctuations limiting the resonance response are the result of noise generated in the junction. Comparison of the noise-equivalent power expected from the simple model with measured results suggests that parasitic elements, such as shunt capacity, are not negligible at 90 GHz.
We have fabricated and characterized the noise performance of well-coupled Nb-Pb alloy edge junction dc superconducting quantum interference devices (SQUIDs) with a resistively shunted inductance. The extra damping resistor removes the resonances in the current-voltage characteristics resulting in a very low value of the extrinsic energy sensitivity in flux-locked-loop operation. Numerical simulations, with the junction capacitance included, indicate that the damping resistance does not degrade noise performance until it is significantly less than the junction-shunting resistance. We also tested different SQUID designs and demonstrated that a large SQUID inductance, proposed earlier to be desirable when resistively shunted, can seriously affect the low-frequency flux noise.
Practical thin-film dc superconducting quantum interference devices (SQUIDs) are often built with an integrated input coil which leads to the formation of various parasitic elements. We have designed and fabricated several square washer-shaped dc SQUID test devices with various amounts of parasitic capacitance formed by covering the washer slits with superconducting coverplates of various widths. In the simplest approximation, the parasitic capacitance Cp appears entirely across the Josephson junctions; in a better approximation, Cp divides the total inductance into two parts, an effective SQUID loop inductance L and a small parasitic inductance Lp. For both models, noise-free and noise-rounded current-voltage and voltage-flux characteristics are calculated for various values of the ratios L/Lp and Cp/C, where C is the Josephson junction capacitance. The SQUID dynamics are significantly affected by Cp and Lp. The energy resolution ε at first deteriorates with increasing Cp for Cp/C ≲ 2, but as Cp/C becomes large, ε improves to less than twice the value for Cp/C ≊ 0. The optimal points of operation for large Cp, however, are found at voltages above the low-frequency resonance determined by L and Cp where the flux-to-voltage transfer function is low. Furthermore, for devices with Cp/C ≫ 1 and Lp≠0, the double-loop geometry leads to an additional resonance determined by Lp and C that appears at high frequencies. The energy resolution inside this high-frequency resonance is nearly independent of Cp and comparable to the energy resolution of a device having the same total inductance but with Cp/C ≪ 1. Extensive noise mappings on several different test devices have been carried out using a computer-controlled measurement system. The measured characteristics and noise performance are shown to be in good agreement with the simulations.