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IEEE Transactions on Applied Superconductivity

Fabrication of NbN-HEB Mixers With Fluoride Radical Etching Process

H. Kataoka, Akira Kawakami, Yoshinori Uzawa, Z. Wang, Necati Kaya

Published Jun 1, 2005• 5 citations
Publisher

Abstract

Hot electron bolometers (HEBs) are expected to be used as low-noise heterodyne mixers for applications in radio astronomy and remote sensing in the terahertz frequency region. We fabricated and tested HEB mixers for these applications; however, those we made with the conventional process easily broke due to thermal stress and electrical surges. To improve their durability, a new process involving fluoride radical etching was developed. In this process, HEB mixers were fabricated using a relatively thick NbN strip (several tens of nm). Finally, the NbN strip was etched that was less than 4-nm thick enough to operate as HEB mixers by using the fluoride radical etching. We confirmed that fluoride radical etching caused no damage to the etched NbN strip. The dc properties of the HEB mixers fabricated with the new process did not change for fourteen 4.2-300 K thermal cycles for 50 days. The receiver noise temperature of the HEB mixer was evaluated and it was about 615 K at 780 GHz.

DOI
10.1109/tasc.2005.849877

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Hot electron bolometers (HEBs) are expected to be used as low-noise heterodyne mixers for applications in radio astronomy and remote sensing in the terahertz frequency region. We fabricated and tested HEB mixers for these applications; however, those we made with the conventional process easily broke due to thermal stress and electrical surges. To improve their durability, a new process involving fluoride radical etching was developed. In this process, HEB mixers were fabricated using a relatively thick NbN strip (several tens of nm). Finally, the NbN strip was etched that was less than 4-nm thick enough to operate as HEB mixers by using the fluoride radical etching. We confirmed that fluoride radical etching caused no damage to the etched NbN strip. The dc properties of the HEB mixers fabricated with the new process did not change for fourteen 4.2-300 K thermal cycles for 50 days. The receiver noise temperature of the HEB mixer was evaluated and it was about 615 K at 780 GHz.
We report the fabrication and testing of hot electron bolometric mixers with an ultrathin NbN film as heterodyne receivers operating at terahertz frequencies. We found that the quality of the NbN strip is usually degraded by damage resulting from the fabrication process, and we developed a process for reducing such damage. We also fabricated HEB mixers with a new structure in order to study the IF bandwidth determined by the original quality of the NbN thin films. Investigations at 100 GHz revealed that the widest IF bandwidth of 2.0 GHz was obtained by a mixer based on a 2.8 nm-thick NbN film. An HEB mixer based on the 2.8 nm-thick NbN film was also fabricated and evaluated. The receiver noise temperature at 900 GHz was 780 K, the absorbed LO power was about 400 nW, and the conversion gain was -13 dB.
Hot-electron bolometer (HEB) mixers are used in many low noise heterodyne radio astronomical receivers. Their noise temperature is at the level of 10–15 times the quantum limit, and their gain bandwidth is from 2 GHz to slightly more than 5 GHz depending on the type of substrate material used for a device fabrication. The HEB mixers presented in this Letter are a complex multilayer thin-film structure containing an ultra-thin superconducting film of NbN as a detecting element, and a thick normal metal layer as an antenna structure. The overall performance of the device has been improved by optimisation of the HEB mixer fabrication steps starting with ultra-thin NbN films, followed by NbN/Au bi-layers for antenna structures. Patterning was achieved using electron-beam lithography and lift-off processes. The noise temperature of the HEB mixer fabricated with the improved technology is about 800 K, as measured in a cryogenic-free system with a quantum cascade laser as a local oscillator.
Hot electron bolometer mixers (HEBM) are expected to be used as low-noise heterodyne mixers in the terahertz frequency range. We are developing quasi-optical HEBMs for applications such as atmospheric remote sensing and radio astronomy in the terahertz frequency range. Therefore, we developed a fabrication method using niobium nitride (NbN) ultrathin films deposited on a silicone (Si) substrate for terahertz applications. First, a magnesium oxide buffer layer 50 nm thick was deposited on a Si substrate at approximately 525 °C. After deposition of this layer, NbN ultrathin films were deposited at ambient temperature. Using the buffer layers, we found the transition temperature of the 3.5-nm-thick NbN thin films to be approximately 10 K. The same method was applied to fabricate NbN-HEBMs on a Si substrate. The fabricated quasi-optical mixers were designed to operate at 3.1 THz. The receiver noise temperature was found to be approximately 1930 K (DSB) at 3.1 THz.
Experimental work on the development of a quasi-optical heterodyne receiver for the THz frequency range is reported. The mixing device is a superconducting hot electron bolometer (HEB) made from ultrathin, d = 3 - 5 nm, niobium nitride (NbN) films. Work described in this thesis comprises: The design of a prototype receiver using quasi-optical coupling. Device fabrication involving reactive magnetron sputtering of NbN films and lithographic definition of the antenna integrated mixer. An investigation of the receiver performance at frequencies between 0.6 THz and 2.5 THz. The best performance is obtained with HEB mixers made from NbN films with a thickness d = 3-3.5 nm and a critical temperature T c = 9 - 9.5 K. Double-side band receiver noise temperatures are 530 K at 0.6 THz, 650 K at 1.6 THz and 1100 K at 2.5 THz. Corrected for losses in the receiver input optics, these values amount to only 10 times the theoretical quantum limit. MgO as the substrate material has been shown to provide improved acoustic coupling between NbN film and the substrate compared to other materials such as Si or sapphire. A maximum IF gain bandwidth of 4.5 GHz has been measured under the same operating conditions which yield lowest noise temperature. The local oscilltor power requirement is ~250 nW absorbed in the bolometer. Quasi-optically coupled HEB mixers have become the device-of-choice for radio astronomical applications in the frequency regime at and above 1 THz.
Low noise receivers using quasi-optical superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixers have been designed, fabricated and measured in the terahertz (THz) frequency range for THz applications in astronomy and cosmology. The NbN HEB mixers consist of a planar complementary antenna and several nanometer (nm) thick NbN bridge connecting across the antenna's inner terminals on high-resistivity Si substrates. A double sideband (DSB) receiver noise temperature of 664 K at 0.76 THz, 920 K at 1.6 THz, 1630 K at 2.5 THz and 1710 K at 3.1 THz has been obtained without corrections and no anti-reflection (AR) coating on the surface of the lens.
New advances in hot electron bolometer (HEB) mixers have recently resulted in record-low receiver noise temperatures at terahertz frequencies. We have developed quasi-optically coupled NbN HEB mixers and measured noise temperatures up to 2.24 THz, as described in this paper. We project the anticipated future performance of such receivers to have even lower noise temperature and local-oscillator power requirement as well as wider gain and noise bandwidths. We introduce a proposal for integrated focal plane arrays of HEB mixers that will further increase the detection speed of terahertz systems.