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Springer eBooks

Intermodulation Distortion in Microstrip Superconducting Resonator: Measurements and Simulation

Orest G. Vendik, T. B. Samoǐlova, Разумов Сергей Владимирович, D.A. Kalinikos, V. A. Fedoseev

Published Jan 1, 1997• 2 citations
Publisher
DOI
10.1007/978-94-011-5540-3_28

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The issue of intermodulation distortion in superconducting devices for rf and microwave applications is discussed. The classical frequency conversion theory for nonlinear two-port devices in the small signal limit is shown to apply to microstrip resonators regardless of their geometry and material. Two tone, third order intermodulation measurements allow more sensitive detection of nonlinearity compared to surface impedance measurements, provided a low noise, spurious free experimental setup is adopted. Measurements carried out on high quality Nb meanderline microstrip resonators show that at very low power level nonlinearity is dominated by intrinsic device properties. Film defects start to play a predominant role above a critical power level that strongly depends on the defect’s nature.
Nonlinearities give rise to intermodulation distortion in superconducting microwave devices and currently limit their use to low power applications. We have developed a cryogenic imaging technique to spatially resolve intermodulation distortion and used it to image an 8.2 GHz high temperature superconducting Tl2Ba2CaCu2O8 microwave resonator. The images reveal that the fundamental and intermodulation electric fields obey a fixed relation throughout the device. We note that further refinements of intermodulation theory in resonant devices may be required to fully describe the data.