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physica status solidi (b)

Cavity‐Less Optical Bistability in Semiconductors

Anatoly A. Borshch, V. I. Volkov

Published Dec 1, 1988• 0 citations
Publisher

Abstract

Abstract The way to obtain transverse cavityless OB based on the self‐defocusing of counterpropagating light waves in nonlinear medium is proposed. The theoretical analysis of the transverse OB made it possible to optimize parameters of the bistable cell involved. The experimental investigation are carried out with a semiconductor crystal of CdS. The results show a good agreement with the theory.

DOI
10.1002/pssb.2221500219

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Abstract The way to obtain transverse cavityless OB based on the self‐defocusing of counterpropagating light waves in nonlinear medium is proposed. The theoretical analysis of the transverse OB made it possible to optimize parameters of the bistable cell involved. The experimental investigation are carried out with a semiconductor crystal of CdS. The results show a good agreement with the theory.
Self-defocusing of ordinary and extraordinary laser beams have been investigated in cadmium sulfide semiconductors in the near-band-edge absorption region. First it has been shown experimentally, that effects of the anisotropy nonlinear refraction induced by charge carriers created by single photon absorption is described whole set components of the third order nonlinear susceptibility tensor. New type of transverse optical bistability with increased amout of feedback due to nonlinear anisotropy was demonstrated.