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Fabrication of Nb-SIS mixers with UHV evaporated Al striplines

J. R. Gao, Sergey Kovtonyuk, J. B. M. Jegers, Pieter Dieleman, T. M. Klapwijk, Herman van de Stadt

Published Mar 1, 1996• 2 citations
OpenAlex

Abstract

We have succeeded in developing a novel fabrication process for Nb SIS junctions integrated with an aluminium (Al) stripline for 1 THz waveguide mixers. In particular, a pure Al film, which is evaporated in an ultra-high vacuum system, is applied for the stripline. It can provide a lower surface resistance in comparison with a sputtered Al film, consequently reducing radio frequency (RF) loss in the tuning element. The junctions are fabricated with standard photolithography and typical junction areas are 1 f4m 2 . The heterodyne measurements performed at a temperature of 4.2 K show that high frequency video response extends up to 1.1 THz and the best DSB noise temperatures are 700 K at 900 GHz and 1000 K at 1 THz.

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Low noise Nb-SIS mixers at far above the gap frequency

Jun Gao, Herman van de Stadt, J. B. M. Jegers +5 more

There are great interests in developing Nb SIS mixers because of the extremely low noise temperatures and because of the need of low local oscillator (LO) power. Several groups have demonstrated experimentally that Nb SIS mixers with integrated tuning elements can perform near the quantum noise limit up to the Nb gap frequency (/spl sim/700 GHz). Beyond this frequency, a major loss will take place in the tuning elements, which are Nb-SiO/sub 2/-Nb micro-striplines, because the incoming photons can break the Cooper-pairs, thus increasing the surface resistance of the Nb strips. Applying highly conductive Al instead of Nb for a stripline can reduce the loss since the former has a lower surface resistance at higher frequencies. In this work, we report the fabrication of waveguide Nb SIS mixers with Al striplines and heterodyne measurement results around 1 THz.

[Conference Digest] International Conference on Millimeter Wave and Far-Infrared Technology: ICMWFT '90•Jan 1, 1996•0 citations

Nb-based SIS mixer in the 800 GHz band

Takashi Noguchi, Hiroyuki Maezawa, Sheng‐Cai Shi +1 more

We have built a waveguide SIS mixer with Nb-based parallel-connected twin junctions at 800 GHz which is above the gap frequency of Nb (690 GHz). Heterodyne mixing was performed at 810 GHz and a receiver noise temperature of 580 K (DSB), which includes noise contributions due to a vacuum window and a beam splitter, was achieved using Nb/AlO/sub x//Nb junctions with Nb striplines. The performance of this mixer is quite good and it is shown that efficient mixing in Nb-based SIS junctions is still possible above the gap frequency, SIS mixers with Al striplines have also been fabricated and good DC I-V characteristics have been observed. Heterodyne measurements of these mixers are now under preparation.

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DC AND TERAHERTZ RESPONSE IN Nb SIS MIXERS WITH NbTiN STRIPLINES

Brian D. Jackson, N. N. Iosad, W. M. Laauwen +4 more

It is expected that the integration of NbTiN striplines with Nb-based SIS junctions will extend the range of operation of sensitive SIS mixers up to the energy gap of NbTiN (— 1.2-1.25 THz) to meet the requirements of the HIFI instrument for the Far-Infrared Space Telescope (FIRST). We have fabricated prototype RS waveguide mixers in which Nb/A1-A10,INb SIS junctions are integrated with NbTiN and Al wiring layers. DC current-voltage measurements of these devices show that the voltage gap is somewhat lower and the sub-gap current is somewhat higher for devices with two NbTiN wiring layers in comparison with those in which the top wiring layer is Al (Vgap = 2.7 mV vs. 2.8 mV, and R 2.0/RN — 32 vs. 35). Additionally, the gap voltage of the NbTiN stripline devices is further suppressed by the application of 890-1040 GHz local oscillator power during heterodyne measurements. These effects are attributed to the trapping of heat in the Nb junction electrodes due primarily to quasi-particle trapping at the Nb/NbTiN interface. FTS measurements result in what is believed to be the first reported observation of direct detection response in a NbTiN stripline device above 1.1 'THz. From an analysis of the resonance frequencies of several devices, it appears that the frequency response of the NbTiN striplines is predicted reasonably well by the MattisBardeen theory for the conductivity of a superconductor in the extreme anomalous limit. Furthermore, we present what is believed to be the first reported heterodyne measurements of NbTiN stripline devices in the 0.9-1 THz range. These measurements yield a receiver sensitivity of TN = 830 K at 930 GHz at a bath temperature of 3.3 K, after correction for beamsplitter losses.

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NbTiN Based Tuning Structures for Broadband Nb-Al 2 O >3 -Nb SIS Mixers from 640 GHz-800 GHz

S. Glenz, Sybille Haas, Cornelia E. Honingh +1 more

We present measurements with a prototype waveguide SIS mixer for band 2 (640 GHz – 800 GHz) of HIFI (Heterodyne Instrument for FIRST). The Nb/Al2O3/Nb junctions have an RnA product from 12–18 Ωμm. These junctions are embedded in microstrip circuits tuning out the device capacitance using a NbTiN ground layer and various top conductor materials such as NbTiN, Nb and Al. The NbTiN films are fabricated by DC magnetron sputtering which is optimized for a minimum value of the DC resistivity and for a high critical temperature by varying the sputter pressure, sputter power and Ar:N2 flow. Typical NbTiN film parameters for device fabrication are ρ = 120 μΩcm and Tc = 14.5 K. The best uncorrected noise temperatures we measured so far are for devices with NbTiN/SiO2/Nb tuning. At 4.2 K bath temperature, a standard Yfactor measurement yields uncorrected receiver noise temperatures of 350 K at 642 GHz and 500 K at 810 GHz for 1.5 GHz intermediate frequency. We discuss the effect of the various tuning circuit materials on the mixer performance. In addition, measurements at IF’s between 4 GHz and 8 GHz will be presented.

Softwaretechnik-Trends•Dec 1, 2001•0 citations

Low-noise THz Niobium SIS Mixers

Mei Bin

This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits. To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency. A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/kb to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.

•Sep 1, 1997•8 citations

Low Noise SIS Mixer with Nb Tuning Circuit for the Frequency above 1 THz

Alexandre Karpov, Jonas Stasys Zmuidzinas, F. Rice +4 more

We developed a SIS mixer for the 1.1-1.25 THz band of the heterodyne receiver of Herschel space observatory. The quasi-optical SIS mixer has two NbN/A1N/Nb junctions with the critical current 30-50 IcA/cm 2 and the gap voltage of 3.4 mV. The tuning circuit integrated with SIS junction has the base electrode of Nb and a gold wire layer. This approach simplifies the SIS junction technology, compared to a design using NbTiN base electrode. The junction base electrode and the ground of the tuning micro strip circuit are formed in one step. The frequency of operation of the mixer is well above the gap frequency of Nb, and it behaves here as a normal metal. The epitaxial Nb film is gown at the sapphire substrate. The resistivity of Nb at the critical temperature of 0.211,011m cm is below the resitivity of the best normal metal films. This allows us to expect the loss of only 2 dB in the junction tuning circuit at 1.2 THz. The measured receiver noise temperature is below 600 K.

•Mar 1, 2002•1 citation
We have succeeded in developing a novel fabrication process for Nb SIS junctions integrated with an aluminium (Al) stripline for 1 THz waveguide mixers. In particular, a pure Al film, which is evaporated in an ultra-high vacuum system, is applied for the stripline. It can provide a lower surface resistance in comparison with a sputtered Al film, consequently reducing radio frequency (RF) loss in the tuning element. The junctions are fabricated with standard photolithography and typical junction areas are 1 f4m 2 . The heterodyne measurements performed at a temperature of 4.2 K show that high frequency video response extends up to 1.1 THz and the best DSB noise temperatures are 700 K at 900 GHz and 1000 K at 1 THz.
There are great interests in developing Nb SIS mixers because of the extremely low noise temperatures and because of the need of low local oscillator (LO) power. Several groups have demonstrated experimentally that Nb SIS mixers with integrated tuning elements can perform near the quantum noise limit up to the Nb gap frequency (/spl sim/700 GHz). Beyond this frequency, a major loss will take place in the tuning elements, which are Nb-SiO/sub 2/-Nb micro-striplines, because the incoming photons can break the Cooper-pairs, thus increasing the surface resistance of the Nb strips. Applying highly conductive Al instead of Nb for a stripline can reduce the loss since the former has a lower surface resistance at higher frequencies. In this work, we report the fabrication of waveguide Nb SIS mixers with Al striplines and heterodyne measurement results around 1 THz.
We have built a waveguide SIS mixer with Nb-based parallel-connected twin junctions at 800 GHz which is above the gap frequency of Nb (690 GHz). Heterodyne mixing was performed at 810 GHz and a receiver noise temperature of 580 K (DSB), which includes noise contributions due to a vacuum window and a beam splitter, was achieved using Nb/AlO/sub x//Nb junctions with Nb striplines. The performance of this mixer is quite good and it is shown that efficient mixing in Nb-based SIS junctions is still possible above the gap frequency, SIS mixers with Al striplines have also been fabricated and good DC I-V characteristics have been observed. Heterodyne measurements of these mixers are now under preparation.
It is expected that the integration of NbTiN striplines with Nb-based SIS junctions will extend the range of operation of sensitive SIS mixers up to the energy gap of NbTiN (— 1.2-1.25 THz) to meet the requirements of the HIFI instrument for the Far-Infrared Space Telescope (FIRST). We have fabricated prototype RS waveguide mixers in which Nb/A1-A10,INb SIS junctions are integrated with NbTiN and Al wiring layers. DC current-voltage measurements of these devices show that the voltage gap is somewhat lower and the sub-gap current is somewhat higher for devices with two NbTiN wiring layers in comparison with those in which the top wiring layer is Al (Vgap = 2.7 mV vs. 2.8 mV, and R 2.0/RN — 32 vs. 35). Additionally, the gap voltage of the NbTiN stripline devices is further suppressed by the application of 890-1040 GHz local oscillator power during heterodyne measurements. These effects are attributed to the trapping of heat in the Nb junction electrodes due primarily to quasi-particle trapping at the Nb/NbTiN interface. FTS measurements result in what is believed to be the first reported observation of direct detection response in a NbTiN stripline device above 1.1 'THz. From an analysis of the resonance frequencies of several devices, it appears that the frequency response of the NbTiN striplines is predicted reasonably well by the MattisBardeen theory for the conductivity of a superconductor in the extreme anomalous limit. Furthermore, we present what is believed to be the first reported heterodyne measurements of NbTiN stripline devices in the 0.9-1 THz range. These measurements yield a receiver sensitivity of TN = 830 K at 930 GHz at a bath temperature of 3.3 K, after correction for beamsplitter losses.
We present measurements with a prototype waveguide SIS mixer for band 2 (640 GHz – 800 GHz) of HIFI (Heterodyne Instrument for FIRST). The Nb/Al2O3/Nb junctions have an RnA product from 12–18 Ωμm. These junctions are embedded in microstrip circuits tuning out the device capacitance using a NbTiN ground layer and various top conductor materials such as NbTiN, Nb and Al. The NbTiN films are fabricated by DC magnetron sputtering which is optimized for a minimum value of the DC resistivity and for a high critical temperature by varying the sputter pressure, sputter power and Ar:N2 flow. Typical NbTiN film parameters for device fabrication are ρ = 120 μΩcm and Tc = 14.5 K. The best uncorrected noise temperatures we measured so far are for devices with NbTiN/SiO2/Nb tuning. At 4.2 K bath temperature, a standard Yfactor measurement yields uncorrected receiver noise temperatures of 350 K at 642 GHz and 500 K at 810 GHz for 1.5 GHz intermediate frequency. We discuss the effect of the various tuning circuit materials on the mixer performance. In addition, measurements at IF’s between 4 GHz and 8 GHz will be presented.
This thesis describes the development of low-noise heterodyne receivers at THz frequencies for submillimeter astronomy using Nb-based superconductor-insulator-superconductor (SIS) tunneling junctions. The mixers utilize a quasi-optical configuration which consists of a planar twin-slot antenna and antisymmetrically-fed two-junctions on an antireflection-coated silicon hyperhemispherical lens. On-chip integrated tuning circuits, in the form of microstrip lines, are used to obtain maximum coupling efficiency in the designed frequency band. To reduce the rf losses in the integrated tuning circuits above the superconducting Nb gap frequency (~ 700 GHz), normal-metal Al is used to replace Nb as the tuning circuits. To account the rf losses in the micros trip lines, we calculated the surface impedance of the AI films using the nonlocal anomalous skin effect for finite thickness films. Nb films were calculated using the Mattis-Bardeen theory in the extreme anomalous limit. Our calculations show that the losses of the Al and Nb microstrip lines are about equal at 830 GHz. For Al-wiring and Nb-wiring mixers both optimized at 1050 GHz, the RF coupling efficiency of Al-wiring mixer is higher than that of Nb-wiring one by almost 50%. We have designed both Nb-wiring and Al-wiring mixers below and above the gap frequency. A Fourier transform spectrometer (FTS) has been constructed especially for the study of the frequency response of SIS receivers. This FTS features large aperture size (10 inch) and high frequency resolution (114 MHz). The FTS spectra, obtained using the SIS receivers as direct detectors on the FTS, agree quite well with our theoretical simulations. We have also, for the first time, measured the FTS heterodyne response of an SIS mixer at sufficiently high resolution to resolve the LO and the sidebands. Heterodyne measurements of our SIS receivers with Nb-wiring or Al-wiring have yielded results which arc among the best reported to date for broadband heterodyne receivers. The Nb-wiring mixers, covering 400 - 850 GHz band with four separate fixed-tuned mixers, have uncorrected DSB receiver noise temperature around 5hv/kb to 700 GHz, and better than 540 K at 808 GHz. An Al-wiring mixer designed for 1050 GHz band has an uncorrected DSB receiver noise temperature 840 K at 1042 GHz and 2.5 K bath temperature. Mixer performance analysis shows that Nb junctions can work well up to twice the gap frequency and the major cause of loss above the gap frequency is the rf losses in the microstrip tuning structures. Further advances in THz SIS mixers may be possible using circuits fabricated with higher-gap superconductors such as NbN. However, this will require high-quality films with low RF surface resistance at THz frequencies.
We developed a SIS mixer for the 1.1-1.25 THz band of the heterodyne receiver of Herschel space observatory. The quasi-optical SIS mixer has two NbN/A1N/Nb junctions with the critical current 30-50 IcA/cm 2 and the gap voltage of 3.4 mV. The tuning circuit integrated with SIS junction has the base electrode of Nb and a gold wire layer. This approach simplifies the SIS junction technology, compared to a design using NbTiN base electrode. The junction base electrode and the ground of the tuning micro strip circuit are formed in one step. The frequency of operation of the mixer is well above the gap frequency of Nb, and it behaves here as a normal metal. The epitaxial Nb film is gown at the sapphire substrate. The resistivity of Nb at the critical temperature of 0.211,011m cm is below the resitivity of the best normal metal films. This allows us to expect the loss of only 2 dB in the junction tuning circuit at 1.2 THz. The measured receiver noise temperature is below 600 K.