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IEEE Transactions on Applied Superconductivity

Stacked SNS Josephson junction arrays for quantum voltage standards

Paul D. Dresselhaus, Yonuk Chong, J. H. Plantenberg, Samuel P. Benz

Published Jun 1, 2003• 36 citations
Publisher

Abstract

NIST is using and developing superconductor-normal metal-superconductor (SNS) Josephson arrays for both programmable DC and AC voltage standards. Increasing the output voltage is difficult because the output voltage per junction is small; hence series arrays with large numbers of junctions are needed. The best way to generate higher voltages and achieve the best operating margins for the broadband drive signals is by densely packing the junctions into shorter arrays. NIST has been working on stacked SNS junctions to achieve this goal. By stacking junctions in the array, more junctions may be placed per length, while preserving a lumped microwave element. In this paper we introduce our results on stacked SNS junctions using MoSi/sub 2/ and Ti as barrier materials. These barriers were chosen because they can be reactive-ion etched (RIE) in contrast to our standard PdAu barriers, which must be wet etched. Using RIE, alternating layers of barrier material and Nb may be etched in a single step. We indirectly quantify the junction uniformity in the arrays by measuring the current range of the constant-voltage steps when the arrays are biased with a microwave drive.

DOI
10.1109/tasc.2003.814151

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NIST is using and developing superconductor-normal metal-superconductor (SNS) Josephson arrays for both programmable DC and AC voltage standards. Increasing the output voltage is difficult because the output voltage per junction is small; hence series arrays with large numbers of junctions are needed. The best way to generate higher voltages and achieve the best operating margins for the broadband drive signals is by densely packing the junctions into shorter arrays. NIST has been working on stacked SNS junctions to achieve this goal. By stacking junctions in the array, more junctions may be placed per length, while preserving a lumped microwave element. In this paper we introduce our results on stacked SNS junctions using MoSi/sub 2/ and Ti as barrier materials. These barriers were chosen because they can be reactive-ion etched (RIE) in contrast to our standard PdAu barriers, which must be wet etched. Using RIE, alternating layers of barrier material and Nb may be etched in a single step. We indirectly quantify the junction uniformity in the arrays by measuring the current range of the constant-voltage steps when the arrays are biased with a microwave drive.
Superconductor-normal metal-superconductor (SNS) junctions are well-suited for large-scale integrated superconducting circuits. Potential applications are programmable voltage standards, digital-to-analog converters and large-scale RSFQ circuits. The application of SNS junctions provides some advantages, e.g. a simplified fabrication technology and reduced parasitic inductances. But it requires a technological process with dimensions down to the submicrometer region to achieve sufficiently high characteristic voltages I/sub C/R/sub N/. In our process the normal metal interlayer is titanium. Therefore the sidewall insulation of the junctions can be made by anodization, as it is known from the Nb-Al technology. Nb-Ti-Nb Josephson junctions and junction arrays were fabricated down to the submicrometer range with I/sub C/R/sub N/ values up to 87 microvolt depending on the titanium thickness. Their measured critical currents have a small spread of about 10 percent. Shapiro steps are observed under the influence of microwave irradiation. For the application of such junctions in a programmable Josephson voltage standard a new type of microwave circuit using coplanar strips is proposed and successfully tested in 10 V SIS circuits.
Superconductor/normal conductor/superconductor (SNS) Josephson junction series arrays are the subject of research for the realization of a Josephson arbitrary waveform synthesizer (JAWS) based on pulse-driven Josephson junctions. Lumped arrays of SNS Josephson junctions are investigated for this application at the Physikalisch-Technische Bundesanstalt (PTB). The series arrays consisting of Nb/HfTi/Nb SNS junctions are embedded in the center line of a coplanar waveguide transmission line. To increase the ac output voltage, the Josephson junction series array is designed as a meander-like structure. A broadband response of the arrays is required for the complex pulse operation of the JAWS. The arrays are investigated by dc measurements and for test purposes under continuous microwave irradiation at different frequencies. Flat Shapiro steps were measured for meander-like series arrays with 21 parallel lines containing up to 10 752 junctions. A sine wave with a frequency of 2.5 kHz and a peak voltage of 214 mV Peak was synthesized under pulse mode operation.
Series arrays of Nb–PdAu–Nb Josephson junctions were fabricated with characteristics ideally suited for application in programmable voltage standards and D/A converters with fundamental accuracy. Large arrays of junctions with applied microwave power showed constant voltage steps with current amplitudes as large as 7 mA. A novel coplanar waveguide design enabled uniform microwave power coupling to a five-segment array of 8192 junctions, so each segment had constant voltage steps over the same bias range. The 8192-junction device generated 1.1 mA steps at 186 mV with 11 GHz power and a maximum constant voltage step of 260 mV at 15.34 GHz.
For the first time, lumped series arrays of Josephson junctions have been fabricated with a transmission line-matched 50-Omega resistance. These arrays also have the thousands of junctions necessary to produce a metrologically significant voltage. This approach is expected to increase the output voltage per array and to optimize their performance for Josephson voltage standards. Traditional Josephson arrays for voltage standards have used distributed microwave structures, where array lengths are several multiples of the driving wavelength. The lumped arrays in this work have physical lengths shorter than a quarter of the microwave drive wavelength and total normal-state resistances nearly equal to the transmission line impedance. Fabrication of these arrays was made possible by use of a newly developed Nb-(MoSi2-Nb)nstacked junction technology. We present measurements of the microwave response of lumped arrays with total normal resistances up to 54 Omega and with various termination resistances. A simple numerical model is presented that accounts for the spatial distribution of the microwave current and for the nonuniformity of the junction critical currents. The resulting simulations agree well with experimental results
Superconductor-Normal-Superconductor (SNS) junctions have been used in the design and fabrication of a 1-V rapidly programmable voltage standard. The superconducting circuit is a series array of 32 768 Nb-PdAu-Nb junctions with taps that divide the array into a binary sequence of smaller array segments with a minimum segment size of 128 junctions. The 16-GHz drive frequency is set by the characteristic frequency of the junctions. A computer-controlled 8-channel bias system controls the current in each segment and allows the rapid selection of any one of 513 discrete voltage levels. The system is designed for fast dc measurements and the synthesis of precise ac waveforms.
Several applications of Josephson junctions (JJs) in low-temperature superconducting circuits such as programmable voltage standards and SFQ logical circuits or SQUID sensors require JJs with sub-µm dimensions. A method for preparing superconductor-isolator-superconductor (SIS) JJs as well as superconductor-normal metal-superconductor (SNS) JJs was developed which allows the preparation of both types of junctions by nearly the same technological process. Titanium is used as the normal metal for the SNS JJ. Ti can be anodically oxidized and a technology similar to the well-tried Nb-Al technology for SIS JJs can be applied to the SNS system, too. By electron-beam exposure of a negative deep UV photoresist (ma-N 2400) a stable resist mask is generated which has to withstand the following three self-aligned process steps: etching of the Nb counterelectrode by RIE, isolation by anodization and lifting of a SiO planarization layer. By this process SNS (Nb-Ti-Nb) and SIS (Nb-Al/AlO x -Nb) Josephson junctions with smallest junction areas of 0.49 µm 2 were prepared and characterized by dc measurements and under the influence of microwave irradiation. The Nb-Ti-Nb junctions have I c R n products of 87 µV. They can be used for programmable Josephson voltage standard circuits at frequencies of 70 GHz.