Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Applied Physics Letters

Interdiffusion as a means of fabricating parabolic quantum wells for the enhancement of the nonlinear third-order susceptibility by triple resonance

E. Herbert Li

Published Jul 22, 1996• 17 citations
Publisher

Abstract

Interdiffusion of a standard AlGaAs/GaAs quantum well is proposed as a viable alternative to the complex techniques necessary to fabricate parabolic quantum wells. The extent of the linear diffusion is optimized in order to produce an energy-level ladder if four almost equally spaced eigenstates. The calculated third-order susceptibility of 2700 (nm/V)2 is comparable with that of the parabolic quantum well, which is more than six orders of magnitude compared to that of the bulk GaAs.

DOI
10.1063/1.118139

Related papers

The enhancement of optical third harmonic susceptibility in a parabolic quantum well by triple resonance

Yimin Huang, Chenhsin Lien

The third harmonic susceptibility for the finite parabolic quantum well (PQW) is studied theoretically. An important feature of the finite PQW is that the subband eigenenergies En form an equally spaced energy-level ladder. Since the eigenenergy spacing ℏω0 can be designed to resonate with the pumping source, the third harmonic susceptibility can be greatly enhanced through the triple resonance. A third harmonic susceptibility as high as 2000 (nm/V)2 could be achieved for the finite parabolic quantum well structure. This is a more than six orders of magnitude enhancement as compared to that of the bulk GaAs.

Journal of Applied Physics•Mar 15, 1994•29 citations

Interband difference-frequency generation by means of resonant intersubband transitions in asymmetric quantum wells

Arup Neogi, Yutaka Takahashi, Hitoshi Kawaguchi

We investigate the interband difference-frequency-generation process arising from the three-wave interaction of resonant interband and intersubband coupling lights by theoretical estimation of the linear and the nonlinear susceptibilities of an asymmetric AlGaAs–GaAs quantum well. The three-level quantum-well system is analyzed by the perturbational density-matrix approach. The effect of the variation of carrier density in the quantum well on the interband mixing process is also considered. The nonlinear polarization induced by the intersubband coupling field is significantly enhanced in the case of doped structures. The peak second-order susceptibility estimated at the difference frequency is more than 2 orders of magnitude larger, whereas the coupling-field-induced third-order susceptibility is more than 4 orders of magnitude larger than that of bulk GaAs.

Journal of the Optical Society of America B•Mar 1, 1997•5 citations

Third-harmonic generation in cylindrical parabolic quantum wires with an applied electric field

Guanghui Wang

The third-harmonic generation (THG) in $\mathrm{GaAs}∕\mathrm{AlGaAs}$ cylindrical parabolic quantum wires with an applied static-electric field is studied in detail. An analytic formula for the THG susceptibility in the model is obtained by a compact density matrix approach and an iterative procedure. Finally, the calculated results show the parabolic confinement potential and the applied electric field have great influence on the THG susceptibilities in the system. Another important point is that the maximum THG susceptibility over ${10}^{\ensuremath{-}9}\phantom{\rule{0.3em}{0ex}}{\mathrm{m}}^{2}∕{\mathrm{V}}^{2}$ can be obtained by optimizing the parabolic confinement potential and the applied electric field, which is over ten orders of magnitude greater than in bulk GaAs. The contributors to the very giant three-order nonlinear include the very large dipole transition matrixes and the triple resonant condition.

Physical Review B•Oct 27, 2005•129 citations

Calculation of third-order optical susceptibilities due to excitonic nonlinearities in rectangular GaAs/AlGaAs quantum well wires with finite Al-graded band offsets included

Frank L. Madarasz, Frank Szmulowicz, F. Kenneth Hopkins

Exciton and biexciton binding energies, and wave functions are calculated with a three parameter variational model in an effective mass approximation for a rectangular GaAs quantum well wire surrounded by an AlGaAs cladding. Moreover, the Al interdiffusion into the wire and the finite band offsets between the wire and the cladding have been included. The Coulomb interaction terms are treated exactly in their full 3D form throughout the calculation, especially in the case of the biexciton, a more physically realistic procedure then used in previous calculations which employed an effective 1D potential. Our treatment is unique in the use of a 2D Fourier expansion in the Coulomb potential terms. For the range of dimensions studied, the inclusion of the Al interdiffusion had a pronounced affect on the binding energies when compared to those obtained from the infinite barrier model. Using the results of the exciton and biexciton calculation, we calculate the third-order nonlinear optical susceptibility as a function of pump-probe frequencies in a small range about the exciton absorption resonance. We have found, depending upon wire dimensions and the amount of pump detuning, values of the susceptibilities to be on the order of 10-1 esu and a large off-resonance optical gain due to biexciton formation.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Apr 24, 1995•0 citations

Investigation of linear and third-order nonlinear optical properties of laser-dressed GaAs/GaAsSb/GaAs parabolic valence-band quantum wells

Zahra Najafi Chaleshtari, Azadeh Haghighatzadeh, Amin Attarzadeh

The European Physical Journal Plus•Feb 9, 2023•11 citations

Third-Harmonic Generation in Special Parabolic Quantum Wells

You Bin Yu

Third-harmonic generation in a special asymmetric quantum well is investigated. The third-harmonic generation coefficient is carried out by applying compact-density-matrix method. The numerical results are presented for a GaAs/AlGaAs asymmetric quantum well. The very large third-harmonic generation coefficient is obtained in this quantum well. Moreover, the third-harmonic generation coefficient dependents on the quantum well parameters are investigated, respectively.

Advanced materials research•Sep 18, 2013•0 citations
Interdiffusion of a standard AlGaAs/GaAs quantum well is proposed as a viable alternative to the complex techniques necessary to fabricate parabolic quantum wells. The extent of the linear diffusion is optimized in order to produce an energy-level ladder if four almost equally spaced eigenstates. The calculated third-order susceptibility of 2700 (nm/V)2 is comparable with that of the parabolic quantum well, which is more than six orders of magnitude compared to that of the bulk GaAs.
The third harmonic susceptibility for the finite parabolic quantum well (PQW) is studied theoretically. An important feature of the finite PQW is that the subband eigenenergies En form an equally spaced energy-level ladder. Since the eigenenergy spacing ℏω0 can be designed to resonate with the pumping source, the third harmonic susceptibility can be greatly enhanced through the triple resonance. A third harmonic susceptibility as high as 2000 (nm/V)2 could be achieved for the finite parabolic quantum well structure. This is a more than six orders of magnitude enhancement as compared to that of the bulk GaAs.
We investigate the interband difference-frequency-generation process arising from the three-wave interaction of resonant interband and intersubband coupling lights by theoretical estimation of the linear and the nonlinear susceptibilities of an asymmetric AlGaAs–GaAs quantum well. The three-level quantum-well system is analyzed by the perturbational density-matrix approach. The effect of the variation of carrier density in the quantum well on the interband mixing process is also considered. The nonlinear polarization induced by the intersubband coupling field is significantly enhanced in the case of doped structures. The peak second-order susceptibility estimated at the difference frequency is more than 2 orders of magnitude larger, whereas the coupling-field-induced third-order susceptibility is more than 4 orders of magnitude larger than that of bulk GaAs.
The third-harmonic generation (THG) in GaAs∕AlGaAs\mathrm{GaAs}∕\mathrm{AlGaAs}GaAs∕AlGaAs cylindrical parabolic quantum wires with an applied static-electric field is studied in detail. An analytic formula for the THG susceptibility in the model is obtained by a compact density matrix approach and an iterative procedure. Finally, the calculated results show the parabolic confinement potential and the applied electric field have great influence on the THG susceptibilities in the system. Another important point is that the maximum THG susceptibility over ${10}^{\ensuremath{-}9}\phantom{\rule{0.3em}{0ex}}{\mathrm{m}}^{2}∕{\mathrm{V}}^{2}$ can be obtained by optimizing the parabolic confinement potential and the applied electric field, which is over ten orders of magnitude greater than in bulk GaAs. The contributors to the very giant three-order nonlinear include the very large dipole transition matrixes and the triple resonant condition.
Exciton and biexciton binding energies, and wave functions are calculated with a three parameter variational model in an effective mass approximation for a rectangular GaAs quantum well wire surrounded by an AlGaAs cladding. Moreover, the Al interdiffusion into the wire and the finite band offsets between the wire and the cladding have been included. The Coulomb interaction terms are treated exactly in their full 3D form throughout the calculation, especially in the case of the biexciton, a more physically realistic procedure then used in previous calculations which employed an effective 1D potential. Our treatment is unique in the use of a 2D Fourier expansion in the Coulomb potential terms. For the range of dimensions studied, the inclusion of the Al interdiffusion had a pronounced affect on the binding energies when compared to those obtained from the infinite barrier model. Using the results of the exciton and biexciton calculation, we calculate the third-order nonlinear optical susceptibility as a function of pump-probe frequencies in a small range about the exciton absorption resonance. We have found, depending upon wire dimensions and the amount of pump detuning, values of the susceptibilities to be on the order of 10-1 esu and a large off-resonance optical gain due to biexciton formation.