Photon cannot keep itself unchanged from emission to absorption. The information encoded on the photon is also changed due to interaction with environment. There has no definitely demonstration that the photon being absorbed is the original one from ideal light source since the quantum mechanics itself is an indeterminate theory that the physical measurement is only the probability. We divide the change of the photon state into two parts that one can be compensated and the other cannot be compensated. A concept of photon reconstruction is introduced to explain every optical phenomena including Raman scattering, multi-photon absorption, nonlinear phenomena, free electron lasing, quantum entanglement, high order coherence, ghost imaging and the de-phase which result in error bits or information loss in the quantum information process. An experimental result is explained to show that the signal photon can modify the background even the energy of the photon is not enough for absorption in the wide-band gap semiconductor material. The photon-current-voltage curve and dark-current-voltage curve of an absorption, grating, and multiplication InGaAs/InP avalanche photodiode is analyzed to show that 1550nm input light modified the dark background even the applied reverse bias voltage is far below the punch-through voltage. This increase of the dark count directly relates to the input photons at the 1550nm wavelength but is not due to absorption in the absorption layer and insensitive to the applied voltage.
Photon cannot keep itself unchanged from emission to absorption. The information encoded on the photon is also changed due to interaction with environment. There has no definitely demonstration that the photon being absorbed is the original one from ideal light source since the quantum mechanics itself is an indeterminate theory that the physical measurement is only the probability. We divide the change of the photon state into two parts that one can be compensated and the other cannot be compensated. A concept of photon reconstruction is introduced to explain every optical phenomena including Raman scattering, multi-photon absorption, nonlinear phenomena, free electron lasing, quantum entanglement, high order coherence, ghost imaging and the de-phase which result in error bits or information loss in the quantum information process. An experimental result is explained to show that the signal photon can modify the background even the energy of the photon is not enough for absorption in the wide-band gap semiconductor material. The photon-current-voltage curve and dark-current-voltage curve of an absorption, grating, and multiplication InGaAs/InP avalanche photodiode is analyzed to show that 1550nm input light modified the dark background even the applied reverse bias voltage is far below the punch-through voltage. This increase of the dark count directly relates to the input photons at the 1550nm wavelength but is not due to absorption in the absorption layer and insensitive to the applied voltage.
Constructing quantum computers and other quantum devices requires the ability to leverage quantum properties such as superposition and entanglement – but these effects are fragile and therefore hard to maintain. Recently, scientists at Ecole Normale Superieure in Paris demonstrated a novel method for controlling the quantum properties of light by probing a superconducting circuit in a cavity with microwave photons to control the energy levels that photon quanta can occupy. [17] When two atoms are placed in a small chamber enclosed by mirrors, they can simultaneously absorb a single photon. [16] Optical quantum technologies are based on the interactions of atoms and photons at the single-particle level, and so require sources of single photons that are highly indistinguishable – that is, as identical as possible. Current single-photon sources using semiconductor quantum dots inserted into photonic structures produce photons that are ultrabright but have limited indistinguishability due to charge noise, which results in a fluctuating electric field. [14] A method to produce significant amounts of semiconducting nanoparticles for light-emitting displays, sensors, solar panels and biomedical applications has gained momentum with a demonstration by researchers at the Department of Energy's Oak Ridge National Laboratory. [13] A source of single photons that meets three important criteria for use in quantum-information systems has been unveiled in China by an international team of physicists. Based on a quantum dot, the device is an efficient source of photons that emerge as solo particles that are indistinguishable from each other. The researchers are now trying to use the source to create a quantum computer based on boson sampling. [11] With the help of a semiconductor quantum dot, physicists at the University of Basel have developed a new type of light source that emits single photons. For the first time, the researchers have managed to create a stream of identical photons. [10] Optical photons would be ideal carriers to transfer quantum information over large distances. Researchers envisage a network where information is processed in certain nodes and transferred between them via photons. [9] While physicists are continually looking for ways to unify the theory of relativity, which describes large-scale phenomena, with quantum theory, which describes small-scale phenomena, computer scientists are searching for technologies to build the quantum computer using Quantum Information. In August 2013, the achievement of fully deterministic quantum teleportation, using a hybrid technique, was reported. On 29 May 2014, scientists announced a reliable way of transferring data by quantum teleportation. Quantum teleportation of data had been done before but with highly unreliable methods. The accelerating electrons explain not only the Maxwell Equations and the Special Relativity, but the Heisenberg Uncertainty Relation, the Wave-Particle Duality and the electron's spin also, building the Bridge between the Classical and Quantum Theories. The Planck Distribution Law of the electromagnetic oscillators explains the electron/proton mass rate and the Weak and Strong Interactions by the diffraction patterns. The Weak Interaction changes the diffraction patterns by moving the electric charge from one side to the other side of the diffraction pattern, which violates the CP and Time reversal symmetry. The diffraction patterns and the locality of the self-maintaining electromagnetic potential explains also the Quantum Entanglement, giving it as a natural part of the Relativistic Quantum Theory and making possible to build the Quantum Computer with the help of Quantum Information.
By applying a sufficiently intense beam of off-resonant light, simultaneously with a conventional excitation source beam, the efficiencies of one- and two-photon absorption processes may be significantly modified. The nonlinear mechanism that is responsible, known as laser modified absorption, is fully described by a quantum electrodynamical analysis. The origin of the process, which involves stimulated forward Rayleigh-scattering of the auxiliary beam, relates to higher order terms which are secured by a time-dependent perturbation treatment. These terms, usually inconsequential when a single beam of light is present, become prominent under the secondary optical stimulus – even with levels of intensity that are moderate by today’s standards. Distinctive kinds of behaviour may be observed for chromophores fixed in a static arrangement, or for solution- or gas-phase molecules whose response is tempered by a rotational average of orientations. In each case the results exhibit an interplay of factors involving the beam polarisations and the molecular electronic response. Special attention is given to interesting metastable states that are symmetry forbidden by one- or two-photon absorption. Such states may be accessible, and thus become populated, on input of the auxiliary beam. For example, in the one-photon absorption case, terms arise that are more usually associated with three-photon processes, corresponding to very different selection rules. Other kinds of metastable state also arise in the two-photon process, and measuring the effect of applying the stimulus beam to absorbances of such character adds a new dimension to the information content of the associated spectroscopy. Finally, based on these novel forms of optical nonlinearity, there may be new possibilities for quantum non-demolition measurements.
Interactions between light and molecular matter featuring photon absorption are commonly associated with excitation of individual chromophores. Subsequent relaxation is achieved through numerous mechanisms, such as scattering and energy transfer to neighbouring chromophores. The efficiency of such processes depends on many factors, including the intensity and wavelength of the optical input, the absorption cross-section of the molecule and the relative orientation of molecular components. New photonic materials are developed on the principle that such factors are controllable, duly tailoring the system to suit new technological applications. The parameters that determine the linear response in multicomponent materials are typically assessed within the theoretical framework of classical optics. However, with improved interest and capability in fabricating nanoscale structures (especially those that exhibit quantum effects), it is becoming increasingly relevant to develop theory that more faithfully represents how individual photons engage with matter. In such constructs, the interaction of materials with optical waves and photons is highly dependent on local molecular environment, therefore surrounding structures and ancillary species exert forms of influence on the photophysical processes inherent within dielectric media. At optical wavelengths where the secondary structure displays little intrinsic optical absorption, the role of such components is often interpreted as modifying the input through a corrective local index of refraction. Although expedient in the discussion of bulk properties of a macroscopic medium, it is reasonably supposed at a local chromophore-photon level that optical mechanisms operate in a different fashion. Using a fully quantized approach to the representation of local molecular electronic structure and electrodynamics, this research develops rigorous theory and a corresponding physical interpretation of how photon absorption, scattering and energy transfer are modified by vicinal, non-absorbing chromophores. The results provide insight into the mechanisms achieved within multi-chromophore systems, highlighting factors that assist in the optimization of optical characteristics in designer materials.
The status of the photon in the modern physics was analysed. Within the frames of the Standard Model of particle physics the photon is considered to be the genuine elementary particle, being to be the messenger of the electromagnetic interaction to which are subject charged particles. In contrast, the experts in quantum electodynamics (in particular, in quantum optics) insist, that the description of an photon to be the particle is impossible. The given viewpoint was carefully analysed and its falseness was proved. The expression for a photon wave function is presented. So, the status of the photon in quantum electodynamics was restored. The physics of a quantum absorption process is analysed. It is argued in accordance with Dirac guess, that the photon revival takes place by its absorption. Being to be a soliton, it seems to be keeping safe after an energy absorption in a pinned state, possessing the only by spin. It is shown, that the time of the transfer of absorbing systems in an excited state is finite and moreover, that it can govern the stationary signal registered. The given result is significant for the all stationary spectroscopy, in which at present the transfer of absorbing systems in an excited state is considered to be instantaneous.
We provide a direct comparison between the InGaAs avalanche photodiode (APD) and the NbN superconducting single photon detector (SSPD) for applications in fiber-based quantum cryptography. The quantum efficiency and dark count rate were measured for each detector, and used to calculate the quantum bit error rate (QBER) and shared key rate for a QKD link. The results indicate that, despite low quantum efficiency, the speed of the SSPD makes it a superior detector for quantum information applications. Finally, we present results of an initial integration of an SSPD into a receiver node of the DARPA quantum network to perform quantum key distribution. Encoding quantum information on single photons has enabled the realization of a number of unique communication schemes such as the implementation of the BB84 protocol for quantum key distribution 1 and quantum dense coding. 2 Furthermore, the implementation of these schemes using photons at telecommunication wavelengths has permitted their extension to fiber optic networks, 3,4 drastically increasing the practicality of quantum information processing. To date, the state of the art in commercially available single photon detection at telecommunication wavelengths (1550 nm) has been the thermo-electrically cooled InGaAs avalanche photodiode (APD). The cooled InGaAs APD is generally operated at T = -60°C in the reverse-biased Geiger mode. Though these detectors have been successfully implemented in operating QKD links in optical fiber, the InGaAs APD suffers from afterpulsing effects that limit the key exchange rates. New SPD (single photon detector) technologies based on superconducting materials are emerging that hold tremendous promise for drastically increasing the photon counting rate and eliminating dark noise.57 The SSPD consists of a NbN thin film (t ∼ 5 nm) patterned into a narrow (w ∼ 100 nm) microstrip meander that is ∼ 500μm in length. The detector is cooled to T < 4K in a closed cycle refrigeration unit and a bias current I b is supplied to the device just below the superconducting critical current (I c ). When a photon is incident upon the microstrip superconductivity is broken in the region local to photon absorption and a normal state region is formed in the device. The current passing through the device causes a measurable voltage pulse in the detector that can be amplified and shaped to act as an input for traditional logic circuitry. Due to the unique electronic bandstructure in a superconducting material the intrinsic response time of the device is on the order of picoseconds, so that the repetition rate may be increased above 1 GHz 8 without being susceptible to afterpulsing effects that plague the InGaAs APD. 9 To make a direct comparison between the InGaAs APD and the SSPD both were placed in a SPD characterization testbed to measure quantum efficiency and dark count rate at a variety of bias conditions. The QBER for a QKD link is calculated from the measured parameters and then compared to requirements for a provably secure QKD link. Following detector characterization, one of the nodes of the DARPA Quantum Network operated by BBN Technologies 3 utilized an SSPD in the receiver to transmit key material. The demonstration provides an in situ comparison between the InGaAs APD, normally operated in the BBN link, and the SSPD.
InGaAs/InP single-photon avalanche diodes (SPADs) are widely used in practical applications requiring near-infrared photon counting such as quantum key distribution (QKD). Photon detection efficiency and dark count rate are the intrinsic parameters of InGaAs/InP SPADs, due to the fact that their performances cannot be improved using different quenching electronics given the same operation conditions. After modeling these parameters and developing a simulation platform for InGaAs/InP SPADs, we investigate the semiconductor structure design and optimization. The parameters of photon detection efficiency and dark count rate highly depend on the variables of absorption layer thickness, multiplication layer thickness, excess bias voltage, and temperature. By evaluating the decoy-state QKD performance, the variables for SPAD design and operation can be globally optimized. Such optimization from the perspective of specific applications can provide an effective approach to design high-performance InGaAs/InP SPADs.