We report the successful operation of a superconductor-insulator-superconductor (SIS) finline mixer operating near the superconducting energy gap of Nb. The mixer employs a new type of Pickett-Potter horn-reflector (PPHR) antenna, which exhibits low sidelobes and low cross-polarization levels, and yet is easy to fabricate. The SIS tunnel junction and all of the integrated superconducting tuning circuits are fabricated from Nb using planar-circuit technology. The mixer employs an antipodal finline section, deposited on one side of a quartz substrate, which transforms the high impedance of the waveguide (/spl ap/300 /spl Omega/) to the low impedance of the microstrip line (/spl ap/20 /spl Omega/). The Nb/Al-oxide/Nb tunnel junction is fabricated at the same time as the finline circuit. In this paper, we describe the design and testing of the mixer, and pay particular attention to the electromagnetic design of the PPHR antenna. We investigate the noise temperature and gain of the mixer over 642-714 GHz, and analyze the experimental results using rigorous theories that were developed specifically for the purpose. Our investigation demonstrates that finline mixers have good performance both below and above the superconducting energy gap.
We report the successful operation of a superconductor-insulator-superconductor (SIS) finline mixer operating near the superconducting energy gap of Nb. The mixer employs a new type of Pickett-Potter horn-reflector (PPHR) antenna, which exhibits low sidelobes and low cross-polarization levels, and yet is easy to fabricate. The SIS tunnel junction and all of the integrated superconducting tuning circuits are fabricated from Nb using planar-circuit technology. The mixer employs an antipodal finline section, deposited on one side of a quartz substrate, which transforms the high impedance of the waveguide (/spl ap/300 /spl Omega/) to the low impedance of the microstrip line (/spl ap/20 /spl Omega/). The Nb/Al-oxide/Nb tunnel junction is fabricated at the same time as the finline circuit. In this paper, we describe the design and testing of the mixer, and pay particular attention to the electromagnetic design of the PPHR antenna. We investigate the noise temperature and gain of the mixer over 642-714 GHz, and analyze the experimental results using rigorous theories that were developed specifically for the purpose. Our investigation demonstrates that finline mixers have good performance both below and above the superconducting energy gap.
In this paper, we describe the design and operation of a 350-GHz finline superconductor-insulator-superconductor mixer. The mixer is fed by a horn-reflector antenna, and the superconducting circuit is fabricated using planar-circuit technology and fully integrated tuning. An important feature of the mixer is that it employs an antipodal finline section, deposited on one side of a quartz substrate, which transforms the high impedance of the waveguide (/spl ap/300 /spl Omega/) to the low impedance of the microstrip (/spl ap/20 /spl Omega/). The Nb/Al-oxide/Nb tunnel junction is fabricated at the same time as the finline circuit. In this paper, we describe the design procedure in some detail. We pay particular attention to the synthesis of the finline taper and the electromagnetic design of the horn-reflector antenna. We have tested a finline mixer over the frequency range of 330-370 GHz and measured a receiver noise temperature of 90 K, which remained unchanged over the whole frequency range. Our investigation has demonstrated that it is possible to make superconducting finline mixers for frequencies as high as 350 GHz.
We present the design of a broadband superconductor-insulator-superconductor (SIS) mixer operating near 700 GHz. A key feature of our design is the utilisation of a new type of waveguide to planar circuit transition comprising a unilateral finline taper. This transition is markedly easier to design, simulate and fabricate than the antipodal finline we employed previously. The finline taper and the superconducting circuitry are deposited on a 15 μm thick silicon substrate. The employment of the very thin substrate, achieved using Silicon-On-Insulator (SOI) technology, makes it easy to match the incoming signal to the loaded waveguide. The lightweight mixer chip is held in the E-plane of the waveguide using gold beam leads, avoiding the need for deep grooves in the waveguide wall. This new design yields a significantly shorter chip, free of serrations and a wider RF bandwidth. Since tuning and all other circuits are integrated on the mixer chip, the mixer block is extremely simple, comprising a feed horn and a waveguide section without any complicated mechanical features. We employ a new type of smooth-walled horn which exhibits excellent beam circularity and low cross polarisation, comparable to the conventional corrugated horn, and yet is easier to fabricate. The horn is machined by standard milling with a drill tool shaped into the horn profile. In this paper, we describe the detailed design of the mixer chip including electromagnetic simulations, and the mixer performance obtained with SuperMix simulations. We also present the preliminary measurements of the smooth-walled horn radiation patterns near the mixer operating frequencies.
We report the design and successful operation of an superconductor-insulator-superconductor (SIS) mixer operating near the superconducting gap of niobium. A key feature of this design is the employment of a unilateral finline taper to transform the waveguide modes to microstrip signals. This transition is easy to design since it can be rigorously modeled, and also easy to fabricate being a single-layer structure. We will show that unilateral finline mixers have important advantages at THz frequencies since they exhibit wideband operation at both radio frequency (RF) and intermediate frequency (IF), allow elegant on-chip integration of the mixer circuits and result in an extremely simple mixer block that does not require a backshort or any mechanical tuners. The mixer we describe below is fed by a multiple flare-angle smooth-walled horn which exhibits beam pattern characteristic comparable to the conventional corrugated horn and yet is much easier to fabricate. In this paper, we shall present a brief discussion of the testing of the multiple flare-angle horn and detailed description of the design and testing of the mixer, covering ~100 GHz bandwidth centered at 650 GHz. In particular, we will present full electromagnetic de sign description of the mixer chip including the superconducting effects, and the heterodyne properties of the mixer using quantum mixing theory. Mixer performance tests that we carried out from 595 to 702 GHz gave a best receiver noise temperature of 145 K at 600 GHz, corrected for a 75 μm beam splitter. Finally, we performed a thorough analysis of the mixer performance, comparing the experimental results with theoretical models. Our investigation demonstrated that unilateral finline mixers fed by a multiple flare-angle horn can yield performance comparable to conventional designs, hence are suitable for large format mixer array at THz frequencies.
We have developed a low-noise 850 GHz superconductor–insulator–superconductor quasiparticle mixer with NbTiN thin-film microstrip tuning circuits and hybrid Nb/AlN/NbTiN tunnel junctions. The mixer uses a quasioptical configuration with a planar twin-slot antenna feeding a two-junction tuning circuit. At 798 GHz, we measured an uncorrected double-sideband receiver noise temperature of TRX=260 K at 4.2 K bath temperature. This mixer outperforms current Nb SIS mixers by a factor of nearly 2 near 800 GHz. The high-gap frequency and low loss at 800 GHz make NbTiN an attractive material with which to fabricate tuning circuits for SIS mixers. NbTiN mixers can potentially operate up to the gap frequency, 2Δ/h∼1.2 THz.
Superconductor-Insulator-Superconductor (SIS) tunnel junction mixers are now commonly used in as- tronomical receivers at (sub)millimeter wavelengths because of their superb sensitivity, high dynamic range and stability of operation. Niobium SIS mixers operating at frequencies well below the super- conducting gap (∼680 GHz) have already achieved quantum limited sensitivity. Therefore to further enhance the receiver sensitivity, increasing the Intermediate Frequency (IF) bandwidth of SIS mixers has became crucial. This thesis focuses on the theoretical modeling, design and experimental verifi- cation of Nb SIS mixers operating around 230 GHz with a wide IF bandwidth of 1–15 GHz. These mixers were designed for a single baseline heterodyne interferometer (GUBBINS), which is being built to observe the Sunyaev-Zel’dovich effect in the Cosmic Microwave Background. The combination of wide IF bandwidth SIS mixers and complex analogue correlators will allow GUBBINS to feature high surface brightness sensitivity, that helps to distinguish the weak SZ effect from the background noise. The SIS mixer detector system was assembled inside the GUBBINS cryostat together with the IF electronics and RF/LO optical systems. Low noise temperatures of around 71 K were then measured in the GUBBINS system. The Nb SIS mixer we have developed uses a unilateral finline and fully integrated planar circuits deposited on a silicon substrate, to couple the electromagnetic radiation from the waveguide into the SIS junction. The finline mixer allows a broad-band RF coupling, an easy integration of the on-chip planar circuits and an easy-to-fabricate mixer block. To achieve a wide IF bandwidth, the output impedance of the SIS mixer was well matched to the input impedance of the amplifier by a multi-stage microstrip circuit. Additionally, the planar circuit of the SIS mixer was also designed to have a small lumped inductance and capacitance. The SIS mixer chip was extensively simulated by rigorous electromagnetic software (HFSS) and the S-parameter was exported to a quantum mixing package SuperMix to produce a full-wave model of the mixer. Experimental testing yielded a best noise temperature of 50 K with an average noise temperature of 75 K over an RF bandwidth of 160 GHz– 260 GHz. We have performed thorough experimental and computational investigation of the IF system in particular the constraints on the bandwidth caused by the lumped element capacitance of the mixer chip and the matching of the output impedance of the mixer to the IF amplifier. Our conclusion is that a bandwidth of 1–15 GHz could be achieved using our mixer design, subject to the performance of the amplifier. Finally, a variable temperature load system was successfully developed and tested inside the cryostat, to avoid the losses from the room-temperature optics. We have showed that the noise temperature of the SIS detector could be reduced by as much as 15 K by testing the mixer using a variable temperature load inside the cryostat.
We report on the continuing development of submillimeter quasi-optical slot antenna SIS mixers which use two-junction tuning circuits [1]. The mixers use 10 kA/cm2 Nb/Al-Oxide/Nb junctions and Nb wiring, and have generated DSB receiver noise temperatures around 5hv/kB to 700 GHz, and 16hv/kB (620 K) at 798 GHz. We present Fourier-transform spectrometer (FTS) measurements and heterodyne measurements on several such devices. In general, the measured response at frequencies below the gap of Nb is in good agreement with the predicted performance. Introduction SIS mixers with Nb-trilayer tunnel junctions offer excellent performance at frequencies below 800 GHz, and should perform competitively at frequencies as high as 1.4 THz [2-5]. Our goal is to develop a suite of ultra-low-noise SIS mixers which cover frequencies from = 400 GHz to more than I THz. At frequencies below the Nb gap (< 700 GHz), existing devices perform quite well [6], but further improvements in noise temperatures remain important. In addition, it is quite useful to be able to predict device performance given the design parameters. One can then optimize the device design for a particular frequency band, and confirm that we indeed understand the physics of the device. Progress in the design and operation of devices in this frequency range is presented below. At frequencies above the Nb gap, RF photons can break Cooper pairs, resulting in greater signal loss and higher receiver noise temperatures. The loss is particularly important in the slender microstrip lines used to resonate the junction capacitance and to transform the antenna impedance down to the RF junction impedance. However, the actual coupling of radiation into Nb junctions above the gap should still be reasonably efficient -more than 30% at 800 GHz [7]. In addition to RF loss, one is also affected by increased dispersion at frequencies near the gap. The Nb microstriplines have therefore been carefully designed to ensure the desired bandpass is achieved. We demonstrate for the first time that all-Nb SIS receivers can have substantially better performance than GaAs Schottky receivers for the astronomically important CI ( P2 — P 1 ) and CO (7-6) transitions near 810 GHz. Receiver Configuration Since waveguide mixers become difficult to construct at short submillimeter wavelengths, we have adopted a quasi-optical approach. Here, lenses take the place of waveguide horns, and the incoming radiation is collected by a planar antenna on the SIS mixer substrate [8]. This offers several other advantages, such as on-chip broad-band silt a SS 114 SSE WA Wa Sta MX Dewar 120 Mylar Window SIS Mixer 295 IQ 77 K Mylar Load Bearnsplitter ICI 1= NZ IC =1 HEN1T Amplifier Polyethylene Lens