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IEEE Journal of Quantum Electronics

Comparison of two-wave and three-wave forward mixing in bismuth silicon oxide-theory and experiment

D.C. Jones, LASZLO SOLYMAR

Published Jan 1, 1991• 6 citations
Publisher

Abstract

A comparison is made between the traditional two-wave amplification mechanism and a new mechanism that is due to forward three-wave mixing. It is found experimentally that considerably higher amplification is available using forward three-wave mixing. Experimental results are in good qualitative agreement with theory concerning dependence on frequency detuning and interbeam angle, but there is a discrepancy between experiment and theory relating to the magnitude of the gain obtainable by two-wave and three-wave mixing, respectively. It is suggested that an additional physical gain mechanism arising from large modulation effects should be included in the theory to account fully for the discrepancy between two-wave and three-wave results.>

DOI
10.1109/3.73549

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A comparison is made between the traditional two-wave amplification mechanism and a new mechanism that is due to forward three-wave mixing. It is found experimentally that considerably higher amplification is available using forward three-wave mixing. Experimental results are in good qualitative agreement with theory concerning dependence on frequency detuning and interbeam angle, but there is a discrepancy between experiment and theory relating to the magnitude of the gain obtainable by two-wave and three-wave mixing, respectively. It is suggested that an additional physical gain mechanism arising from large modulation effects should be included in the theory to account fully for the discrepancy between two-wave and three-wave results.>
We present a detailed theory and experiment on degenerate-multiwave-mixing-mediated beam amplification in the semiconductor silicon. The theory accounts for several important factors, such as coupling to higher-order diffractions, intensity-dependent self- and mutual-phase modulations, losses, phase matchings, intensity ratio among the input beams, etc. In the silicon case under study, involving the generation of electron-hole pairs by 1.06-\ensuremath{\mu}m laser pulses, the intensity-dependent absorption loss and the temporal and/or spatial intensity profile of the input laser beam are also explicitly accounted. The experimental results for probe-gain dependences on several parameters are in good agreement with the theory. The important role played by the side diffractions in mediating the amplification of the probe is also apparent in our experiment on phase conjugation of the probe beam, where a strong dependence of the phase-conjugation reflection on the pump- to probe-beam ratio is observed, similar to the probe-gain dependence.
Two-wave mixing amplification of a weak probe beam interfering with a powerful pump beam of the same linear polarization is demonstrated when the probe beam enters the semiconductor sample before the pump pulse. This mixing of two beams of the same frequency is made possible by the difference between self-phase modulation and cross-phase modulation, which modify differently the instantaneous frequencies of both beams. Net gain coefficients up to 5.5 cm (-1) are obtained for experiments performed in CdTe. Theoretical calculations quantitatively confirm this interpretation and predict much higher gain for more resonant configurations or higher pump energies, making this process of potential interest for optical processing.