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Applied Physics Letters

Shot noise beyond the Tucker theory in niobium tunnel junction mixers

Pieter Dieleman, T. M. Klapwijk

Published Mar 30, 1998• 15 citations
Publisher

Abstract

The electrical and shot-noise characteristics of high-current-density niobium superconductor–insulator–superconductor (SIS) tunnel junctions suitable for heterodyne detection of THz radiation are studied. It is found that a significant part of the current at voltages V<2Δ/e is carried via barrier defects (pinholes). Due to the transport mechanism in these pinholes, the shot noise is considerably increased. The data presented clarify an often-observed discrepancy between measured and expected heterodyne mixer noise temperatures and predict a 25% increase in the receiver noise temperature of Nb SIS heterodyne detectors at 1 THz.

DOI
10.1063/1.121142

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The electrical and shot-noise characteristics of high-current-density niobium superconductor–insulator–superconductor (SIS) tunnel junctions suitable for heterodyne detection of THz radiation are studied. It is found that a significant part of the current at voltages V<2Δ/e is carried via barrier defects (pinholes). Due to the transport mechanism in these pinholes, the shot noise is considerably increased. The data presented clarify an often-observed discrepancy between measured and expected heterodyne mixer noise temperatures and predict a 25% increase in the receiver noise temperature of Nb SIS heterodyne detectors at 1 THz.
We study the behavior of NbN SIS junctions as radiation detectors with emphasis on the shot noise generated at voltages below the gap voltage. The intrinsically large subgap current of NbN junctions is carried by pinholes with a conduction attributed to multiple Andreev reflection, leading to transported charges q much greater than e. Using this charge enhancement mechanism we explain the junction shot noise characteristics in the unpumped case as well as in the pumped case. The measured mixer noise temperature in the pumped case is more than twice that calculated with standard Tucker theory. The measured double side band noise temperatures are 1450 K at 600 GHz and 2800 K at 950 GHz.
Superconducting tunnel junctions, which are also known as superconductor-insulator-superconductor (SIS) junctions, are widely used in coherent detection (heterodyne mixing) of electromagnetic radiation at millimeter and submillimeter wavelengths to achieve high spectral resolution (Delta v/v<10(-6)). With extremely low dark current and high quantum efficiency, superconducting tunnel junctions are also promising for THz photon detection. Besides the merit of high detection sensitivity, THz photon detectors with superconducting tunnel junctions can be operated at relatively high temperatures (above 0.3 K) and don't need rather complicated filtering systems by simply incorporating a superconducting resonant circuit with superconducting tunnel junctions. This paper mainly investigates the characteristics of THz photon detectors with Nb and NbN-based superconducting tunnel junctions. The MAR effect and associated shot noise are addressed. Some analytical and preliminary experimental results are presented.
We have fabricated and tested submillimeter-wave superconductor–insulator–superconductor (SIS) mixers using very high-current-density Nb/AlN/Nb tunnel junctions (Jc≈30 kA cm−2). The junctions have low-resistance-area products (RNA≈5.6 Ω μm2), good subgap-to-normal resistance ratios Rsg/RN≈10, and good run-to-run reproducibility. From Fourier transform spectrometer measurements, we infer that ωRNC=1 at 270 GHz. This is a factor of 2.5 improvement over what is generally available with Nb/AlOx/Nb junctions suitable for low-noise mixers. The AlN-barrier junctions are indeed capable of low-noise operation: we measure an uncorrected double-sideband receiver noise temperature of TRX=110 K at 533 GHz for an unoptimized device. In addition to providing wider bandwidth operation at lower frequencies, the AlN-barrier junctions will considerably improve the performance of THz SIS mixers by reducing rf loss in the tuning circuits.
DC heating effects in superconductor–insulator–superconductor (SIS) tunnel junctions are studied by comparing junctions sandwiched between niobium or aluminum layers. With niobium a temperature rise of several Kelvin is observed, which is reduced by an order of magnitude by using aluminum. A simple model satisfactorily explains this observation and predicts a 30% increase in the subgap current due to the elevated temperature. At the operating voltage for heterodyne mixing the receiver noise temperature increases by only 2%.
Superconducting tunnel junctions, which are also known as superconductor-insulator-superconductor (SIS) junctions, are widely used in coherent detection (heterodyne mixing) of electromagnetic radiation at millimeter and submillimeter wavelengths to achieve high spectral resolution (Δν/ν<10-6). With extremely low dark current and high quantum efficiency, superconducting tunnel junctions are also promising for THz photon detection. Besides the merit of high detection sensitivity, THz photon detectors with superconducting tunnel junctions can be operated at relatively high temperatures (above 0.3 K) and don't need rather complicated filtering systems by simply incorporating a superconducting resonant circuit with superconducting tunnel junctions. This paper mainly investigates the characteristics of THz photon detectors with Nb and NbN-based superconducting tunnel junctions. The MAR effect and associated shot noise are addressed. Some analytical and preliminary experimental results are presented.
This repost describes our results on development of low-noise heterodyne THz receivers for ground based and space radio astronomy. Superconductor-insulator-superconductor (SIS) mixers that employ high quality Nb-based tunnel junctions are the key element of the most sensitive heterodyne THz receivers. In particular we present here the SIS receivers for frequency range 211-275 GHz and 800-950 GHz with double sideband (DSB) noise temperature of about 25 K and 220 K, respectively. The latest results on development, fabrication techniques and experimental study of the SIS receivers will be discussed.