Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Conference on Lasers and Electro-Optics

Microscopic theory of carrier-wave Rabi flopping and the two-band Mollow triplet in semiconductors

Q. T. Vu, L. Bányai, H. Haug, Oliver D. Mücke, Thorsten Tritschler, Martin Wegener, Uwe Morgner, Franz X. Käertner, G. Khitrova, H. M. Gibbs

Published May 16, 2004• 0 citations
OpenAlex

Abstract

We compare experiments on carrier-wave Rabi flopping with fully dynamical solutions of the semiconductor Bloch equations, leading to good agreement. This theory confirms that the peak structure is due to a two-band Mollow triplet.

Related papers

Microscopic theory of carrier-wave Rabi flopping and the two-band Mollow triplet in semiconductors

Vu, Banyai, Haug +7 more

Conference on Lasers and Electro-Optics•Jan 1, 2004•0 citations

Carrier-wave Rabi flopping: role of the carrier-envelope phase

Oliver D. Mücke, Thorsten Tritschler, Martin Wegener +4 more

Recently, a dependence of Rabi flopping on the carrier-envelope phase of the exciting laser pulses was predicted theoretically [Phys. Rev. Lett. 89, 127401 (2002)] for excitation of a thin semiconductor film with intense few-cycle pulses. Here, we report corresponding experiments on 50-100-nm thin GaAs films excited with 5-fs pulses. We find a dependence on the carrier-envelope phase arising from the interference of sidebands from the fundamental or the third-harmonic Mollow triplet, respectively, with surface second-harmonic generation.

Optics Letters•Sep 15, 2004•51 citations

Carrier-wave Rabi flopping in GaAs: band structure effects and influence of the carrier-envelope phase

O.D. Mikke, Thorsten Tritschler, Martin Wegener

Summary form only given. In our recent experiments on the model semiconductor GaAs using 5 fs pulses, the Rabi period became as short as 3 fs, which is comparable to the period of light of 2.9 fs at the GaAs band edge. Hence, the medium's dynamics significantly distort the optical polarization within one optical cycle, which can be measured by a characteristic shape of the harmonics of the emitted light. In this paper we summarize our efforts to obtain a detailed understanding of these experiments by simulations based on a finite difference time-domain algorithm, solving the coupled Maxwell-Bloch equations in one dimension without using either the rotating wave approximation or the slowly varying envelope approximation. We consider not only transitions close to the band edge but also transitions up to 5.8 eV photon energy in a realistic fashion, i.e. comprising the known E/sub 1/ and E/sub 2/ resonances in GaAs which are due to band structure effects.

Quantum Electronics and Laser Science Conference•Jun 25, 2003•0 citations

Signatures of carrier-wave Rabi flopping in GaAs

Oliver D. Mücke, Thorsten Tritschler, Martin Wegener +2 more

Summary form only given. Illuminating a semiconductor with a constant light intensity can lead to a periodic oscillation of the inversion, a phenomenon which is known as Rabi flopping. Using pulsed excitation, Rabi flopping has been observed on semiconductors and exhibited periods in the range from 100 fs to 1 ps. Hughes (Phys. Rev. Lett. vol. 81, p. 3363, 1998) theoretically investigated the question of what happens when the light intensity becomes so high that the period of one Rabi oscillation becomes comparable with that of only one cycle of light, 2.7 fs for the band edge of GaAs, and predicted a new phenomenon: carrier-wave Rabi flopping. During a carrier-wave Rabi oscillation, the optical polarization becomes strongly distorted, which can lead to a double-peak structure (the Fourier-transform of the Rabi oscillation) in the third-harmonic (3/spl omega/) spectra. This characteristic shape is quite different from the well-known off-resonant third-harmonic generation. Importantly, resonant effects contain information on the dynamics of electronic resonances-potentially on the timescale of a single optical cycle. It is clear that, under these conditions, the usual envelope approximation breaks down, i.e. both the rotating wave approximation (RWA) as well as the slowly varying envelope approximation (SVEA) must not be used. This paper investigates carrier-wave Rabi flopping experimentally.

Quantum Electronics and Laser Science Conference•Nov 13, 2002•3 citations

Carrier-wave Rabi flopping in semiconductors

Oliver D. Mücke, Thorsten Tritschler, Martin Wegener

Elsevier eBooks•Jan 1, 2003•0 citations

Many-body theory of Rabi flopping and photon echo in semiconductors

S. W. Koch, Rolf H. Binder, Markus Lindberg

The availability of femtosecond pulses in the optical-frequency regime allows the study of coherent effects in the interaction between semiconductors and light. Because the properties of the exciting pulses become important ingredients in spectroscopy, the theoretical analysis must treat the complete time dependence of the system. For this purpose we use the semiconductor Bloch equations (SBE),1-3 which are the coupled equations of motion for the interband polarization and the electron and hole populations for an interacting electron-hole system in the random-phase approximation. The equations describe the electron-hole Coulomb attraction leading to excitonic features; they contain phasespace filling and band-gap renormalization effects, as well as the dipole interaction with the applied light field.

Quantum Electronics and Laser Science Conference•May 12, 1991•1 citation
Recently, a dependence of Rabi flopping on the carrier-envelope phase of the exciting laser pulses was predicted theoretically [Phys. Rev. Lett. 89, 127401 (2002)] for excitation of a thin semiconductor film with intense few-cycle pulses. Here, we report corresponding experiments on 50-100-nm thin GaAs films excited with 5-fs pulses. We find a dependence on the carrier-envelope phase arising from the interference of sidebands from the fundamental or the third-harmonic Mollow triplet, respectively, with surface second-harmonic generation.
Summary form only given. In our recent experiments on the model semiconductor GaAs using 5 fs pulses, the Rabi period became as short as 3 fs, which is comparable to the period of light of 2.9 fs at the GaAs band edge. Hence, the medium's dynamics significantly distort the optical polarization within one optical cycle, which can be measured by a characteristic shape of the harmonics of the emitted light. In this paper we summarize our efforts to obtain a detailed understanding of these experiments by simulations based on a finite difference time-domain algorithm, solving the coupled Maxwell-Bloch equations in one dimension without using either the rotating wave approximation or the slowly varying envelope approximation. We consider not only transitions close to the band edge but also transitions up to 5.8 eV photon energy in a realistic fashion, i.e. comprising the known E/sub 1/ and E/sub 2/ resonances in GaAs which are due to band structure effects.
Summary form only given. Illuminating a semiconductor with a constant light intensity can lead to a periodic oscillation of the inversion, a phenomenon which is known as Rabi flopping. Using pulsed excitation, Rabi flopping has been observed on semiconductors and exhibited periods in the range from 100 fs to 1 ps. Hughes (Phys. Rev. Lett. vol. 81, p. 3363, 1998) theoretically investigated the question of what happens when the light intensity becomes so high that the period of one Rabi oscillation becomes comparable with that of only one cycle of light, 2.7 fs for the band edge of GaAs, and predicted a new phenomenon: carrier-wave Rabi flopping. During a carrier-wave Rabi oscillation, the optical polarization becomes strongly distorted, which can lead to a double-peak structure (the Fourier-transform of the Rabi oscillation) in the third-harmonic (3/spl omega/) spectra. This characteristic shape is quite different from the well-known off-resonant third-harmonic generation. Importantly, resonant effects contain information on the dynamics of electronic resonances-potentially on the timescale of a single optical cycle. It is clear that, under these conditions, the usual envelope approximation breaks down, i.e. both the rotating wave approximation (RWA) as well as the slowly varying envelope approximation (SVEA) must not be used. This paper investigates carrier-wave Rabi flopping experimentally.
The availability of femtosecond pulses in the optical-frequency regime allows the study of coherent effects in the interaction between semiconductors and light. Because the properties of the exciting pulses become important ingredients in spectroscopy, the theoretical analysis must treat the complete time dependence of the system. For this purpose we use the semiconductor Bloch equations (SBE),1-3 which are the coupled equations of motion for the interband polarization and the electron and hole populations for an interacting electron-hole system in the random-phase approximation. The equations describe the electron-hole Coulomb attraction leading to excitonic features; they contain phasespace filling and band-gap renormalization effects, as well as the dipole interaction with the applied light field.