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IEEE Transactions on Applied Superconductivity

New Generation of Nanowire NbN Superconducting Single-Photon Detector for Mid-Infrared

Yu. P. Korneeva, Irina Florya, Alexander V. Semenov, Alexander A. Korneev, Gregory N Gol'tsman

Published Nov 18, 2010• 26 citations
Publisher

Abstract

We present a break-through approach to mid-infrared single-photon detection based on nanowire NbN superconducting single-photon detectors (SSPD). Although SSPD became a mature technology for telecom wavelengths (1.3-1.55 μm) its further expansion to mid-infrared wavelength was hampered by low sensitivity above 2 μm. We managed to overcome this limit by reducing the nanowire width to 50 nm, while retaining high superconducting properties and connecting the wires in parallel to produce a voltage response of sufficient magnitude. The new device exhibits 10 times better quantum efficiency at 3.5 μm wavelength than the “standard” SSPD.

DOI
10.1109/tasc.2010.2087740

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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Apr 29, 2011•3 citations
We present a break-through approach to mid-infrared single-photon detection based on nanowire NbN superconducting single-photon detectors (SSPD). Although SSPD became a mature technology for telecom wavelengths (1.3-1.55 μm) its further expansion to mid-infrared wavelength was hampered by low sensitivity above 2 μm. We managed to overcome this limit by reducing the nanowire width to 50 nm, while retaining high superconducting properties and connecting the wires in parallel to produce a voltage response of sufficient magnitude. The new device exhibits 10 times better quantum efficiency at 3.5 μm wavelength than the “standard” SSPD.
Superconducting single-photon detectors (SSPD) is typically 100 nm-wide supercondiucting strip in a shape of meander made of 4-nm-thick film. To reduce response time and increase voltage response a parallel connection of the strips was proposed. Recently we demonstrated that reduction of the strip width improves the quantum effciency of such a detector at wavelengths longer than 1.5 μm. Being encourage by this progress in quantum effciency we improved the fabrication process and made parallel-wire SSPD with 40-nm-wide strips covering total area of 10 μm x 10 μm. In this paper we present the results of the characterization of such a parallel-wire SSPD at 10.6 μm wavelength and demonstrate linear dependence of the count rate on the light power as it should be in case of single-photon response.
Nanowire superconducting single-photon detectors (SSPDs) consist of a superconducting wire of nanoscale cross-section [1], typically 4×100 nm2. A current close to the device critical current renders the nanowire sensitive to single photons. SSPDs are known for their high efficiency, low jitter, low dark count rate and fast reset time. An important challenge for future application of SSPDs is to extend the useful wavelength range towards the infrared without comprising detector speed or dark count rate. To this end, we explore optical designs with wider nanowires that utilize efficient detection of single photons at the edge of the nanowire. Silicon nanowires on top of a NbN nanowire increase both the calculated total absorption and the internal detection efficiency significantly compared to a standard meandering wire geometry.
Superconducting single-photon detector (SSPD) is a planar nanostructure patterned from 4-nm-thick NbN film deposited on sapphire substrate. The sensitive element of the SSPD is 100-nm-wide NbN strip. The device is operated at liquid helium temperature. Absorption of a photon leads to a local suppression of superconductivity producing subnanosecond-long voltage pulse. In infrared (at 1550 nm and longer wavelengths) SSPD outperforms avalanche photodiodes in terms of detection efficiency (DE), dark counts rate, maximum counting rate and timing jitter. Efficient single-mode fibre coupling of the SSPD enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. Recently we managed to improve the SSPD performance and measured 25% detection efficiency at 1550 nm wavelength and dark counts rate of 10 s-1. We also improved photon-number resolving SSPD (PNR-SSPD) which realizes a spatial multiplexing of incident photons enabling resolving of up to 4 simultaneously absorbed photons. Another improvement is the increase of the photon absorption using a λ/4 microcavity integrated with the SSPD. And finally in our strive to increase the DE at longer wavelengths we fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm and demonstrated that in middle infrared (about 3 μm wavelength) these devices have DE several times higher compared to the traditional SSPDs.
Mid-infrared (MIR) single-photon detection is emerging as an important technology for various applications. Superconducting nanowire single photon detectors (SNSPDs) fabricated with superconducting films with energy gaps of a few meV are natural broadband single-photon detectors. Recently, extending SNSPDs’ operation wavelengths into the MIR region is highly attractive. γ-Nb4N3 has a reduced N content and lower energy gap than the commonly used δ-NbN, making SNSPDs based on γ-Nb4N3 film more sensitive to low energy photons. We report on a Nb4N3-SNSPD based on 62-nm wide nanowire, with an optical absorption enhancement design and an optimized device package for efficient ZBLAN fiber coupling and dark count filtering. The developed device has a unity intrinsic detection efficiency (IDE) in the 1.5–4 µm wavelength region, and the device detection efficiency at 2.95 µm was measured to be 32.5%, with an uncertainty of 12.7%. Furthermore, we reduced the device geometry, and measured 3–10 µm photon response of a device based on 5-nm film and 42-nm nanowire, with an IDE of 95%, 81%, 40%, and 6% for 4.8, 6, 8, and 10 µm, respectively.
Superconducting nanowire single-photon detectors are widely used for detecting individual photons across various wavelengths from ultraviolet to near-infrared range. Recently, there has been increasing interest in enhancing their sensitivity to single photons in the mid-infrared spectrum, driven by applications in quantum communication, spectroscopy, and astrophysics. Here, we present our efforts to expand the spectral detection capabilities of U-shaped NbTiN-based superconducting nanowire single-photon detectors, fabricated in a 2-wire configuration on a silicon-on-insulator substrate, into the mid-infrared range. We demonstrate saturated internal detection efficiency extending up to a wavelength of 3.5 μm for a 5 nm thick and 50 nm wide NbTiN nanowire with a dark count rate less than 10 counts per second at 0.9 K and a rapid recovery time of 4.3 ns. The detectors are engineered for integration on waveguides in a silicon-on-insulator platform for compact, multi-channel device applications.
Superconducting single-photon detector (SSPD) is patterned from 4-nm-thick NbN film deposited on sapphire substrate as a 100-nm-wide strip. Due to its high detection efficiency, low dark counts, and picosecond timing jitter SSPD has become a competitor to the InGaAs avalanche photodiodes at 1550 nm and longer wavelengths. Although the SSPD is operated at liquid helium temperature its efficient single-mode fibre coupling enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. In our strive to increase the detection efficiency at 1550 nm and longer wavelengths we developed and fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm. To increase the voltage response of the device we utilized cascade switching mechanism: we connected 50-nm-wide and 10-μm-long strips in parallel covering the area of 10 μmx10 μm. Absorption of a photon breaks the superconductivity in a strip leading to the bias current redistribution between other strips followed their cascade switching. As the total current of all the strips about is 1 mA by the order of magnitude the response voltage of such an SSPD is several times higher compared to the traditional meander-shaped SSPDs. In middle infrared (about 3 μm wavelength) these devices have the detection efficiency several times higher compared to the traditional SSPDs.