Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

International Journal of Infrared and Millimeter Waves

Tunerless mixer mount for an SIS 80–120 GHz receiver

Kazuyoshi Sunada, Ryohei Kawabe, Junji Inatani

Published Jun 1, 1993• 17 citations
Publisher
DOI
10.1007/bf02146255

Related papers

145 GHz receiver with SIS mixer

W. Hilberath, Bernd Vowinkel

Kleinheubacher Berichte•Jan 1, 1986•0 citations

Simulated performance of SIS and SIN junctions as heterodyne receivers in waveguide and open antenna mixer mounts

Steven R. Davies, R. Shafiee, Leslie T. Little

International Journal of Infrared and Millimeter Waves•Feb 1, 1990•2 citations

Progress on tunerless SIS mixers for the 200-300 GHz band

Anthony R. Kerr, S.-K. Pan, A. W. Lichtenberger +1 more

An integrated superconductor-insulator-superconductor (SIS) mixer for the 200-300-GHz band with no adjustable tuning is described. A waveguide input is coupled to a coplanar mixer circuit with six individually tuned SIS junctions in series. Using the best mixer, the receiver noise temperature is 45-80 K DSB over 215-275 GHz. The mixer noise temperature at 230 GHz is 12 K DSB, and the conversion loss is 2.5 dB DSB.>

IEEE Microwave and Guided Wave Letters•Nov 1, 1992•36 citations

A 75–110 GHz Sis Mixer With Integrated Tuning and Coupled Gain

Dag Winkler, A. Hodge Worsham, N. G. Ugras +3 more

Springer eBooks•Jan 1, 1991•9 citations

A 275–425-GHz Tunerless Waveguide Receiver Based on AlN-Barrier SIS Technology

J. Kooi, A. Kovács, Matthew Sumner +7 more

We report on a 275-425-GHz tunerless waveguide receiver with a 3.5-8-GHz IF. As the mixing element, we employ a high-current-density Nb-AlN-Nb superconducting-insulating-superconducting (SIS) tunnel junction. Thanks to the combined use of AlN-barrier SIS technology and a broad bandwidth waveguide to thin-film microstrip transition, we are able to achieve an unprecedented 43% instantaneous bandwidth, limited by the receiver's corrugated feedhorn. The measured double-sideband (DSB) receiver noise temperature, uncorrected for optics loss, ranges from 55 K at 275 GHz, 48 K at 345 GHz, to 72 K at 425 GHz. In this frequency range, the mixer has a DSB conversion loss of 2.3 plusmn1 dB. The intrinsic mixer noise is found to vary between 17-19 K, of which 9 K is attributed to shot noise associated with leakage current below the gap. To improve reliability, the IF circuit and bias injection are entirely planar by design. The instrument was successfully installed at the Caltech Submillimeter Observatory (CSO), Mauna Kea, HI, in October 2006.

IEEE Transactions on Microwave Theory and Techniques•Oct 1, 2007•38 citations

A Tunerless SIS Mixer for 200-280 GHz with Low Output Capacitance and Inductance

Anthony R. Kerr, S.-K. Pan, A. W. Lichtenberger +1 more

The introduction by Padin et al. in 1996 of an SIS mixer with an integrated IF amplifier eliminates the need for an IF isolator and makes possible SIS receivers with multi-octave IF's. To realize a wide IF bandwidth, an SIS mixer must be designed with low IF capacitance and inductance. This paper describes an SIS mixer in which the RF circuit is effectively decoupled from the IF circuit, and a compact high-impedance RF choke circuit is used, resulting in low output capacitance and inductance.

•Mar 1, 1998•20 citations
We report on a 275-425-GHz tunerless waveguide receiver with a 3.5-8-GHz IF. As the mixing element, we employ a high-current-density Nb-AlN-Nb superconducting-insulating-superconducting (SIS) tunnel junction. Thanks to the combined use of AlN-barrier SIS technology and a broad bandwidth waveguide to thin-film microstrip transition, we are able to achieve an unprecedented 43% instantaneous bandwidth, limited by the receiver's corrugated feedhorn. The measured double-sideband (DSB) receiver noise temperature, uncorrected for optics loss, ranges from 55 K at 275 GHz, 48 K at 345 GHz, to 72 K at 425 GHz. In this frequency range, the mixer has a DSB conversion loss of 2.3 plusmn1 dB. The intrinsic mixer noise is found to vary between 17-19 K, of which 9 K is attributed to shot noise associated with leakage current below the gap. To improve reliability, the IF circuit and bias injection are entirely planar by design. The instrument was successfully installed at the Caltech Submillimeter Observatory (CSO), Mauna Kea, HI, in October 2006.
The introduction by Padin et al. in 1996 of an SIS mixer with an integrated IF amplifier eliminates the need for an IF isolator and makes possible SIS receivers with multi-octave IF's. To realize a wide IF bandwidth, an SIS mixer must be designed with low IF capacitance and inductance. This paper describes an SIS mixer in which the RF circuit is effectively decoupled from the IF circuit, and a compact high-impedance RF choke circuit is used, resulting in low output capacitance and inductance.