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Optics Communications

Nonlinear optical devices based on a transparency in semiconductor intersubband transitions

Holger Schmidt, Ataç İmamoğlu

Published Nov 1, 1996• 110 citations
Publisher
DOI
10.1016/0030-4018(96)00354-9

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We investigate the conduction intersubband linear response of a n-type quantum well driven by one or two infrared optical fields with arbitrary strengths. The fields couple the third subband to the second energy subband and the ground subband, forming a Λ system. We investigate the dependences of the absorption spectrum on the pump field strengths. The results for the equal Rabi frequencies can be understood in terms of quantum coherence processes of the intersubband transitions, such as coherent population trapping, and electromagnetically induced transparency. The effects of different Rabi frequencies on the absorption spectrum due to fields are also discussed.
We propose a new class of intersubband lasers and amplifiers that achieve net gain without population inversion. The laser scheme is based on a unipolar semiconductor double quantum- well structure where gain occurs at a transition between conduction band subbands. In order to achieve net gain without inversion, we utilize Fano-type interferences. The semiconductor laser scheme that we are considering is analogous to the atomic lambda system that has been extensively analyzed in the context of electromagnetically induced transparency and lasing without inversion. A coherent coupling field however, is not required in the present scheme. The electronic coherence necessary for Fano-type interferences is established by resonant tunneling. For nonlinear optics applications, the asymmetry of the structure allows for (chi) (2) processes and therefore higher conversion efficiency or parametric gain.