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Applied Physics Letters

Radio-frequency single-electron transistor: Toward the shot-noise limit

A. Aassime, David Gunnarsson, Kevin Bladh, Per Delsing, R. J. Schoelkopf

Published Dec 10, 2001• 88 citations
Publisher

Abstract

We have fabricated an aluminum single-electron transistor and characterized it at frequencies up to 10 MHz by measuring the reflected signal from a resonant tank in which the transistor is embedded. We measured the charge sensitivity of this radio-frequency single-electron transistor to be 3.2×10−6 e/Hz, which corresponds to the uncoupled energy sensitivity of 4.8 ℏ. Our measurements indicate that with further improvements, the radio-frequency single-electron transistor could reach the shot-noise limit estimated to be about 1 ℏ.

DOI
10.1063/1.1424477

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We have fabricated an aluminum single-electron transistor and characterized it at frequencies up to 10 MHz by measuring the reflected signal from a resonant tank in which the transistor is embedded. We measured the charge sensitivity of this radio-frequency single-electron transistor to be 3.2×10−6 e/Hz, which corresponds to the uncoupled energy sensitivity of 4.8 ℏ. Our measurements indicate that with further improvements, the radio-frequency single-electron transistor could reach the shot-noise limit estimated to be about 1 ℏ.
We demonstrate the use of the single-electron transistor as a radio-frequency mixer, based on the nonlinear dependence of current on gate charge. This mixer can be used for high-frequency, ultrasensitive charge measurements over a broad and tunable range of frequencies. We demonstrate operation of the mixer, using a lithographically defined thin-film aluminum transistor, in both the superconducting and normal states of aluminum, over frequencies from 10 to 300 MHz. We have operated the device both as a homodyne detector and as a phase-sensitive heterodyne mixer. We demonstrate a charge sensitivity of <4×10−3 e/Hz, limited by room-temperature electronics. An optimized mixer has a theoretical charge sensitivity of ≲1.5×10−5 e/Hz.
By configuring a radio frequency single-electron transistor as a mixer, we demonstrate a unique implementation of this device, that achieves good charge sensitivity with large bandwidth about a tunable center frequency. In our implementation we achieve a measurement bandwidth of 16 MHz, with a tunable center frequency from 0 to 1.2 GHz, demonstrated with the transistor operating at 300 mK. Ultimately this device is limited in center frequency by the RC time of the transistor’s center island, which for our device is ∼1.6GHz, close to the measured value. The measurement bandwidth is determined by the quality factor of the readout tank circuit.
A Single-Electron Transistor (SET) is a highly sensitive charge amplifier based on the Coulomb blockade that can operate near the quantum limit: amplification can be accomplished with a back-action close to that required by the uncertainty principle. Its charge sensitivity is ultimately limited to about 1micre/sqrt(Hz) by the shot noise in the source-drain current. Despite the fact that such sensitivity has been approached by some, the shot-noise limit has yet to be reached for either the SET and its RF version, the RF-SET. A scheme is proposed and realized in this thesis for the shot noise-limited detection of a Single-Electron Transistor, based on a DC-SQUID impedance-matched with a DC-biased SET. SQUIDs can operate at the quantum limit, and a microstrip SQUID amplifier has already been demonstrated to operate at almost twice the quantum-limited noise temperature at about 500MHz by M. Muck and collaborators, with a sensitivity sufficient to resolve the SET shot noise. The device has been fabricated and characterized. A 50KOhm resistor has been used as a noise source at low temperature and the measured noise levels have been estimated. Moreover, the detection noise temperature of about 110mK was derived corresponding to a current sensitivity of about 8fA/sqrt(Hz) for the detection of a 100KOhm resistor.
A new type of electrometer is described that uses a single-electron transistor (SET) and that allows large operating speeds and extremely high charge sensitivity. The SET readout was accomplished by measuring the damping of a 1.7-gigahertz resonant circuit in which the device is embedded, and in some ways is the electrostatic "dual" of the well-known radio-frequency superconducting quantum interference device. The device is more than two orders of magnitude faster than previous single-electron devices, with a constant gain from dc to greater than 100 megahertz. For a still-unoptimized device, a charge sensitivity of 1.2 x 10(-5) e/hertz was obtained at a frequency of 1.1 megahertz, which is about an order of magnitude better than a typical, 1/f-noise-limited SET, and corresponds to an energy sensitivity (in joules per hertz) of about 41 Planck's over 2pi.