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Physical review. B, Condensed matter

Persistent current in a two-band disordered interacting one-dimensional ring

Dovi Yellin, Richard Berkovits

Published Jul 15, 1994• 0 citations
Publisher

Abstract

Using numerical exact diagonalization and analytical variational calculations, we examine the effect of an electronic two-band structure on the persistent current of an interacting disordered one-dimensional ring. Several different features in comparison to a single band model are encountered. Among them are a transition in the magnitude of current for a critical ratio of the hopping elements in the two bands, and a large increase in the rms value of the persistent current for certain values of interaction and disorder. Possible experimental implications are discussed.

DOI
10.1103/physrevb.50.1671

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Using numerical exact diagonalization and analytical variational calculations, we examine the effect of an electronic two-band structure on the persistent current of an interacting disordered one-dimensional ring. Several different features in comparison to a single band model are encountered. Among them are a transition in the magnitude of current for a critical ratio of the hopping elements in the two bands, and a large increase in the rms value of the persistent current for certain values of interaction and disorder. Possible experimental implications are discussed.
We present an exact calculation of the persistent current in interacting disordered 1D rings. This system exhibits a variety of interesting behaviors depending on the disorder and the strength of electron-electron interactions. We find that even for the disordered case the current at high values of interactions is strongly suppressed due to the Mott-Hubbard metal-insulator transition. We observe that no dramatic increase of the averaged current or its rms value as a result of interactions is possible for these systems.
A comparison between the persistent currents in a diagonal and an off-diagonal disordered one-dimensional (1D) interacting ring, using a numerical exact diagonalization method, reveals essential differences in behavior. While the diagonally disordered system exhibits some increase in the current as a function of electron-electron (e-e) interactions, the off-diagonally disordered system shows a consistent decrease. The different behavior of the two systems is explained by the different nature of the many-body eigenstates in both cases.
The persistent current for an arbitrarily filled strongly interacting one-dimensional ring is studied using variational and numerical exact diagonalization methods. For an ordered ring a difference between the commensurate and the incommensurate cases is observed. While for the commensurate case the current in the limit of strong interactions always tends to zero, in the incommensurate case there are situations (termed the frustrated cases) in which the current is finite. For a disordered ring the current always tends to zero in the limit of strong interactions. The implications on persistent current experiments are discussed.
We present an exact calculation of the persistent current of electrons with Hubbard interactions in disordered one-dimensional rings. Numerical simulations show that the currents exhibit an interesting dependence on the configuration and strength W of disorder, and the value of the Hubbard interaction U. Our numerical simulations show that disorder and interaction both can monotonically suppress the amplitude of the current. The interaction can sometimes enhance the current of a disordered ring depending on its configuration and degree of disorder, even though smaller than the corresponding ideal-ring value VF{\mathit{V}}_{\mathit{F}}VF​e/L. We have also studied the effect of negative U, and shown that it can influence the current as the positive U does. Based on the eigenvalue theory of a matrix, we give a simple explanation of the effects of disorder and interaction on currents. The main results are consistent with the numerical results for the case of long-range Coulomb interactions.
The persistent current is here studied in one-dimensional disordered rings that contain interacting electrons. We used the density matrix renormalization group algorithms in order to compute the stiffness, a measure that gives the magnitude of the persistent currents as a function of the boundary conditions for different sets of both interaction and disorder characteristics. In contrast to its noninteracting value, an increase in the stiffness parameter was observed for systems at and off half-filling for weak interactions and nonzero disorders. Within the strong interaction limit, the decrease in stiffness depends on the filling and an analytical approach is developed to recover the observed behaviors. This is required in order to understand its mechanisms. Finally, the study of the localization length confirms the enhancement of the persistent current for moderate interactions when disorders are present at half-filling. Our results reveal two different regimes, one for weak and one for strong interactions at and off half-filling.