Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:cond-mat/0204212 · Europhysics Letters (EPL)

Disorder-induced enhancement of the persistent current for strongly interacting electrons in one-dimensional rings

E Gambetti-Césare, Dietmar Weinmann A, Rodolfo A. Jalabert, Ph Brune

Published Oct 1, 2002• 23 citations
arXivHTMLPDF

Abstract

We show that disorder increases the persistent current of a half-filled one-dimensional Hubbard-Anderson ring at strong interaction. This unexpected effect results from a perturbative expansion starting from the strongly interacting Mott insulator ground state. The analytical result is confirmed and extended by numerical calculations.
DOI
10.1209/epl/i2002-00328-9

Related papers

Effect of electronic interactions on the persistent current in one-dimensional disordered rings

E. Gambetti

The persistent current is here studied in one-dimensional disordered rings that contain interacting electrons. We used the density matrix renormalization group algorithms in order to compute the stiffness, a measure that gives the magnitude of the persistent currents as a function of the boundary conditions for different sets of both interaction and disorder characteristics. In contrast to its noninteracting value, an increase in the stiffness parameter was observed for systems at and off half-filling for weak interactions and nonzero disorders. Within the strong interaction limit, the decrease in stiffness depends on the filling and an analytical approach is developed to recover the observed behaviors. This is required in order to understand its mechanisms. Finally, the study of the localization length confirms the enhancement of the persistent current for moderate interactions when disorders are present at half-filling. Our results reveal two different regimes, one for weak and one for strong interactions at and off half-filling.

arXiv:cond-mat/0501204•Physical Review B•Oct 26, 2005•13 citations

Persistent currents in an interacting 1D disordered ring: Manifestations of the Mott-Hubbard transition

Michael Abraham, Richard Berkovits

We present an exact calculation of the persistent current in interacting disordered 1D rings. This system exhibits a variety of interesting behaviors depending on the disorder and the strength of electron-electron interactions. We find that even for the disordered case the current at high values of interactions is strongly suppressed due to the Mott-Hubbard metal-insulator transition. We observe that no dramatic increase of the averaged current or its rms value as a result of interactions is possible for these systems.

Physical Review Letters•Mar 8, 1993•141 citations

Persistent currents of interacting electrons in one-dimensional disordered rings

Wenji Deng, Youyan Liu, Chang-De Gong

We present an exact calculation of the persistent current of electrons with Hubbard interactions in disordered one-dimensional rings. Numerical simulations show that the currents exhibit an interesting dependence on the configuration and strength W of disorder, and the value of the Hubbard interaction U. Our numerical simulations show that disorder and interaction both can monotonically suppress the amplitude of the current. The interaction can sometimes enhance the current of a disordered ring depending on its configuration and degree of disorder, even though smaller than the corresponding ideal-ring value ${\mathit{V}}_{\mathit{F}}$e/L. We have also studied the effect of negative U, and shown that it can influence the current as the positive U does. Based on the eigenvalue theory of a matrix, we give a simple explanation of the effects of disorder and interaction on currents. The main results are consistent with the numerical results for the case of long-range Coulomb interactions.

Physical review. B, Condensed matter•Sep 15, 1994•26 citations

Effect Of Coulomb Interactions on The Amplitude Of Persistent Currents In One Dimensional Disordered Mesoscopic Metallic Rings

Robinson O. Okanigbuan, Kingsley N. Onaiwu, S. Ehika

Persistent current is a small but perpetual electric current that flows in metallic rings in the absence of any applied source. We compute the persistent currents of one-dimensional disordered metallic rings of interacting electrons in the presence of impurity on lattices up to 8-sites at half-filling and also away from half-filling using the Lanczos algorithm. For the case of half-filling, we observe that both interaction and disorder suppress the amplitude of the persistent currents by localizing the electrons. However, in the presence of disorder and away from half-filling, the Coulomb interaction is observed to enhance the persistent current. Furthermore, in the half-filled case, there is a transition from metal to insulator as U is increased significantly. In addition, shifting away from half-filling, the system is observed to remain in the metallic state irrespective of the value of the Coulomb repulsion (U). The observations are quite in agreement with the results from other techniques.

arXiv:2107.02078•Jul 5, 2021•0 citations

Persistent currents in 1D rings and the metal-insulator transition under strong long-range Coulomb repulsion

Richard Berkovits, V Frelikher, I. V. Yurkevich +1 more

A perturbative approach for large (in comparison with electron overlap and onsite disorder) long-range Coulomb interaction is developed for a 1D ring model. The explicit expression for low-lying energy levels has been obtained. It is shown that in the case of strong repulsive long-range interaction persistent current does not depend exclusively on the filling factor nu =p/q but is extremely sensitive to its denominator q. It also depends on the common factor M of electrons and sites number. In the absence of a common factor (M=1) there exists only one quasiparticle that experiences no strong Coulomb interaction, thus moving freely with bare electron overlap, which provides an unexpectedly large persistent current. For the case of an arbitrary M and a large enough q a system of M weakly interacting quasiparticles has been introduced, which undergoes a metal-insulator transition at unusually small overlap even for a filling factor close to one half. Suppression of the persistent current by disorder is taken into account. Comparison of analytically obtained expressions with the results of numerical calculations shows a reasonable agreement.

Journal of Physics Condensed Matter•Apr 4, 1994•0 citations

Persistent currents in one-dimensional disordered rings of interacting electrons

G. Bouzerar, Didier Poilblanc, Gilles Montambaux

We calculate the persistent current of one-dimensional rings of spinless fermions with short-range interactions on a lattice with up to 20 sites, and in the presence of disorder, for various band fillings. We find that both disorder and interactions always decrease the persistent current by localizing the electrons. Away from half-filling, the interaction has a much stronger influence in the presence of disorder than in the pure case.

arXiv:cond-mat/9310007•Physical review. B, Condensed matter•Mar 15, 1994•155 citations
The persistent current is here studied in one-dimensional disordered rings that contain interacting electrons. We used the density matrix renormalization group algorithms in order to compute the stiffness, a measure that gives the magnitude of the persistent currents as a function of the boundary conditions for different sets of both interaction and disorder characteristics. In contrast to its noninteracting value, an increase in the stiffness parameter was observed for systems at and off half-filling for weak interactions and nonzero disorders. Within the strong interaction limit, the decrease in stiffness depends on the filling and an analytical approach is developed to recover the observed behaviors. This is required in order to understand its mechanisms. Finally, the study of the localization length confirms the enhancement of the persistent current for moderate interactions when disorders are present at half-filling. Our results reveal two different regimes, one for weak and one for strong interactions at and off half-filling.
We present an exact calculation of the persistent current in interacting disordered 1D rings. This system exhibits a variety of interesting behaviors depending on the disorder and the strength of electron-electron interactions. We find that even for the disordered case the current at high values of interactions is strongly suppressed due to the Mott-Hubbard metal-insulator transition. We observe that no dramatic increase of the averaged current or its rms value as a result of interactions is possible for these systems.
We present an exact calculation of the persistent current of electrons with Hubbard interactions in disordered one-dimensional rings. Numerical simulations show that the currents exhibit an interesting dependence on the configuration and strength W of disorder, and the value of the Hubbard interaction U. Our numerical simulations show that disorder and interaction both can monotonically suppress the amplitude of the current. The interaction can sometimes enhance the current of a disordered ring depending on its configuration and degree of disorder, even though smaller than the corresponding ideal-ring value VF{\mathit{V}}_{\mathit{F}}VF​e/L. We have also studied the effect of negative U, and shown that it can influence the current as the positive U does. Based on the eigenvalue theory of a matrix, we give a simple explanation of the effects of disorder and interaction on currents. The main results are consistent with the numerical results for the case of long-range Coulomb interactions.
Persistent current is a small but perpetual electric current that flows in metallic rings in the absence of any applied source. We compute the persistent currents of one-dimensional disordered metallic rings of interacting electrons in the presence of impurity on lattices up to 8-sites at half-filling and also away from half-filling using the Lanczos algorithm. For the case of half-filling, we observe that both interaction and disorder suppress the amplitude of the persistent currents by localizing the electrons. However, in the presence of disorder and away from half-filling, the Coulomb interaction is observed to enhance the persistent current. Furthermore, in the half-filled case, there is a transition from metal to insulator as U is increased significantly. In addition, shifting away from half-filling, the system is observed to remain in the metallic state irrespective of the value of the Coulomb repulsion (U). The observations are quite in agreement with the results from other techniques.
A perturbative approach for large (in comparison with electron overlap and onsite disorder) long-range Coulomb interaction is developed for a 1D ring model. The explicit expression for low-lying energy levels has been obtained. It is shown that in the case of strong repulsive long-range interaction persistent current does not depend exclusively on the filling factor nu =p/q but is extremely sensitive to its denominator q. It also depends on the common factor M of electrons and sites number. In the absence of a common factor (M=1) there exists only one quasiparticle that experiences no strong Coulomb interaction, thus moving freely with bare electron overlap, which provides an unexpectedly large persistent current. For the case of an arbitrary M and a large enough q a system of M weakly interacting quasiparticles has been introduced, which undergoes a metal-insulator transition at unusually small overlap even for a filling factor close to one half. Suppression of the persistent current by disorder is taken into account. Comparison of analytically obtained expressions with the results of numerical calculations shows a reasonable agreement.