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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

High Frequency Wavelength Modulation Spectroscopy With Diode Lasers For Optical Memory Applications

Peter Pokrowsky, Werner Zapka, F. Chu, Gary C. Bjorklund

Published Nov 30, 1983• 0 citations
Publisher

Abstract

High frequency wavelength modulation spectroscopy with diode lasers is accomplished by dithering the drive current at RF frequencies between 10 and 250 MHz. This technique is useful for fast and sensitive detection of absorption lines and is applied for fast reading of information from a frequency domain optical memory based upon photochemical hole burning.

DOI
10.1117/12.935178

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High frequency wavelength modulation spectroscopy with diode lasers is accomplished by dithering the drive current at RF frequencies between 10 and 250 MHz. This technique is useful for fast and sensitive detection of absorption lines and is applied for fast reading of information from a frequency domain optical memory based upon photochemical hole burning.
We describe transient spectroscopic measurements with a current-switched semiconductor diode laser. Following a fast pulse modulation in the injection current of the diode laser, the diode laser frequency is switched by a few hundred MHz and, then, is scanned over 10 GHz range in a short-time evolution (<0.5 µs). Free-induction decay based on the frequency switching and transient absorption spectroscopy of rubidium D1 lines based on the fast frequency-scan are experimentally demonstrated. These fast spectroscopic measurements are accomplished in a single-shot pulse modulation and are, thus, applicable to short-lived samples such as in flowing or combustion systems.
Frequency-modulation spectroscopy provides ultrasensitive absorption measurements. The technique is especially adaptable to diode lasers, which can be modulated easily, and has been used extensively in the near-infrared and infrared spectral regions. The availability of blue diode lasers now means that the accessible wavelength region can be increased. We successfully demonstrate wavelength-modulation spectroscopy and two-tone frequency-modulation spectroscopy for the weak second resonance line of potassium at 404.8 nm and for the transition at 405.8 nm in lead, starting from the thermally populated 6(p)(2 3)P(2) metastable level. Information on the modulation parameters is obtained with a fitting procedure. Experimental signal-to-noise ratios at different absorption levels are compared with theoretical signal-to-noise ratios and show good agreement. Detection sensitivities of 2 x 10(-6) and 5 x 10(-6) for wavelength and two-tone frequency-modulation spectroscopy, respectively, for a 120-Hz bandwidth are demonstrated.
A series of simple and low-cost devices for switching, amplifying, and chirping diode lasers based on current modulation are presented. Direct modulation of diode laser currents is rarely sufficient to establish precise amplitude and phase control over light, as its effects on these parameters are not independent. These devices overcome this limitation by exploiting amplifier saturation and dramatically outperform commonly used external modulators in key figures of merit for quantum technological applications. Semiconductor optical amplifiers operated on either rubidium D line are recast as intensity switches and shown to achieve ON:OFF ratios >106 in as little as 50 ns. Current is switched to a 795 nm wavelength (Rb D1) tapered amplifier to produce optical pulses of few nanosecond duration and peak powers of 3 W at a similar extinction ratio. Fast rf pulses are applied directly to a laser diode to shift its emission frequency by up to 300 MHz in either direction and at a maximum chirp rate of 150 MHz ns-1. Finally, the latter components are combined, yielding a system that produces watt-level optical pulses with arbitrary frequency chirps in the given range and <2% residual intensity variation, all within 65 ns upon asynchronous demand. Such systems have broad application in atomic, molecular, and optical physics and are of particular interest to fast experiments simultaneously requiring high power and low noise, for example, quantum memory experiments with atomic vapors.
Frequency-modulation (FM) spectroscopy has been performed on the D(2) transitions of rubidium atoms with an AlGaAs diode laser at 780 nm. Doppler-broadened hyperfine-structure transitions of (85)Rb and (87)Rb were resolved with no residual amplitude-modulation-induced background signal by modulating the injection current of the laser diode at a low frequency (20-50 MHz) compared with the Doppler width. To obtain Doppler-free spectra, we combined FM spectroscopy with saturation spectroscopy. The results show that the FM spectroscopy technique is sensitive and should be useful for high-resolution spectroscopy, although the resolution was instrument limited and unusual double peaks were observed.