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Annalen der Physik

Resonant Raman scattering from a spin density wave insulator

A. P. Kampf, W. Brenig

Published Jan 1, 1992• 3 citations
Publisher

Abstract

Abstract We present a calculation of the electronic Raman cross section for the scattering of light across the energy gap of an antiferromagnetic insulator. The antiferromagnet is described in terms of a spin density wave state for the Hubbard model at half filling. We consider the coupling of the light to the current density and the inverse mass tensor on equal footing. A comparison of the cross section for different scattering geometries is given.

DOI
10.1002/andp.19925040307

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Abstract We present a calculation of the electronic Raman cross section for the scattering of light across the energy gap of an antiferromagnetic insulator. The antiferromagnet is described in terms of a spin density wave state for the Hubbard model at half filling. We consider the coupling of the light to the current density and the inverse mass tensor on equal footing. A comparison of the cross section for different scattering geometries is given.
We present a theory of Raman Scattering in the Hubbard model. The scattering of light has resonant and non-resonant contributions. The resonant term gives rise to scattering by spin degrees of freedom in the insulating case, for which we derive a general form of the effective scattering Hamiltonian. The later involves four terms with distinct symmetry properties, one of them being the “chiral” spin operator ∑ Si · (Sj×Sk). The corresponding four distinct correlation function can be measured directly in the experiments with different scattering geometries. The nonresonant term contributes to the scattering in the doped case and is shown to probe the fluctuations of the “stress tensor”. This quantity is not conserved and hence its fluctuations at small q inherent in optical experiments, need not be small, in striking contrast with the density fluctuation in usual metals.
We investigate the resonant two-magnon Raman scattering in two-dimensional (2D) Mott insulators by using a half-filled 2D Hubbard model in the strong coupling limit. By performing numerical diagonalization calculations for small clusters, we find that the Raman intensity is enhanced when the incoming photon energy is not near the optical absorption edge but well above it, being consistent with experimental data. The absence of resonance near the gap edge is associated with the presence of background spins, while photoexcited states for resonance are found to be characterized by the charge degree of freedom. The resonance mechanism is different from those proposed previously.
We propose a theoretical framework which can treat the nonresonant and the resonant inelastic light scattering on an equal footing in the form of correlation function, employing Keldysh–Schwinger functional integral formalism. The interference between the nonresonant and the resonant process can be also incorporated in this framework. This approach is applied to the magnetic Raman scattering of two-dimensional antiferromagnetic insulators. The entire set of the scattering cross-sections are obtained at finite temperature, the result for the resonant part agrees with the one obtained by the conventional Fermi golden rule at zero temperature. The interference contribution is shown to be very sensitive to the scattering geometry and the band structure.
Symmetry of photoexcited states with two photoinduced carriers in two-dimensional Mott insulators is examined by applying the numerically exact diagonalization method to finite-size clusters of a half-filled Hubbard model in the strong-coupling limit. The symmetry of minimum-energy bound state is found to be s-wave, which is different from a d_{x^2-y^2} wave of a two-hole pair in doped Mott insulators. We demonstrate that the difference is originated from an exchange of fermions due to the motion of a doubly occupied site. Correspondingly large-shift Raman scattering across the Mott gap exhibits a minimum-energy excitation in the A1 (s-wave) channel. We discuss implications of the results for the Raman scattering and other optical experiments.
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We present a theory of Raman scattering in the Hubbard model. The scattering of light has two contributions. One gives rise to scattering by spin degrees of freedom in the insulating case where the general form of the scattering Hamiltonian is derived. The fluctuations of the ``chiral'' spin operator ${\mathrm{\ensuremath{\Sigma}}}_{{\mathit{S}}_{\mathit{i}}}$\ensuremath{\cdot}(Si{\mathrm{S}}_{\mathit{i}}Si​\ifmmode\times\else\texttimes\fi{}Sk{\mathrm{S}}_{\mathit{k}}Sk​) are shown to contribute in the B2g{\mathit{B}}_{2\mathit{g}}B2g​ scattering geometry. The other contributes in the doped case and is shown to probe the fluctuations of the ``stress tensor.'' This quantity is not conserved, and hence its fluctuations at small q inherent in optical experiments need not be small, in striking contrast to density fluctuations in usual metals.