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Nanotechnology

Coherent transients in semiconductor nanostructures as a basis for optical logical operations

I. Ya. Gerlovin, V. V. Ovsyankin, Boris V. Stroganov, Valerii S Zapasskii

Published Nov 14, 2000• 6 citations
Publisher

Abstract

We propose an approach to realization of all-optical logical operations based on the nonlinear dynamics of an ensemble of two-level systems (TLSs) in a coherent photonic field. Using a theoretical analysis of the behaviour of a TLS ensemble in a resonant field, we formulate requirements for dynamic characteristics of a medium suitable for implementation of a photonic gate. Experimental studies of optical dynamics and excitonic state spectra of epitaxial GaAs/AlGaAs quantum wells and superlattices has allowed us to conclude that their physical parameters make it possible to build photonic-gate matrices exceeding the transistor-based electronic switches in terms of their productive capacity by five to six orders of magnitude.

DOI
10.1088/0957-4484/11/4/338

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We propose an approach to realization of all-optical logical operations based on the nonlinear dynamics of an ensemble of two-level systems (TLSs) in a coherent photonic field. Using a theoretical analysis of the behaviour of a TLS ensemble in a resonant field, we formulate requirements for dynamic characteristics of a medium suitable for implementation of a photonic gate. Experimental studies of optical dynamics and excitonic state spectra of epitaxial GaAs/AlGaAs quantum wells and superlattices has allowed us to conclude that their physical parameters make it possible to build photonic-gate matrices exceeding the transistor-based electronic switches in terms of their productive capacity by five to six orders of magnitude.
The idea of the design is proposed for the photonic quantum gates (PG) with their input/output properties based on nonlinear optical dynamics of 2D arrays of two-level systems (TLS) in the resonance field of coherent optical pulses. As a particular example of the 2D medium with functions of the PG we consider the GaAs/AlGaAs-based 2D excitonic structures. By methods of femtosecond chronopolarimetry of delayed photoreflection. we have studied the energy and phase relaxation rates and the biexciton binding energy in these structures and have shown that the GaAs/AlGaAs MQW can serve as a good basis for building the PG.
Semiconductors exhibit large optical nonlinearities near the band edge because of resonance enhancement. Optical bistability occurs when the optical nonlinearities are coupled with feedback. In bulk GaAs and GaAs–AlGaAs multiple-quantum-well superlattices, the nonlinearity arising from the presence of the free-exciton resonance has produced room-temperature optical bistability with a few milliwatts of power. The formation of biexcitons in CuCl, the saturation of the bound exciton on CdS, and band-filling effects in InSb, InAs, and HgCdTe lead to observation of bistability in these materials. A bistable etalon can be operated in an optical-gate mode to generate optical analogs of electronic gates such as and, or, and nor. It has been demonstrated that a GaAs optical NOR gate responds in ∼1 psec, using only ≲3 pJ of energy. However, because of the carrier lifetime of a few nanoseconds, the repetition rate of the NOR gate is now limited to a few hundred megahertz.
We present a realization of two-qubit controlled-phase gate, based on the linear and nonlinear properties of the probe and signal optical pulses in an asymmetric GaAs/AlGaAs double quantum wells. It is shown that, in the presence of cross-phase modulation, a giant cross-Kerr nonlinearity and mutually matched group velocities of the probe and signal optical pulses can be achieved while realizing the suppression of linear and self-Kerr optical absorption synchronously. These characteristics serve to exhibit an all-optical two-qubit controlled-phase gate within efficiently controllable photon-photon entanglement by semiconductor mediation. In addition, by using just polarizing beam splitters and half-wave plates, we propose a practical experimental scheme to discriminate the maximally entangled polarization state of two-qubit through distinguishing two out of the four Bell states. This proposal potentially enables the realization of solid states mediated all-optical quantum computation and information processing.
Potential application of elementary excitation in semiconductor quantum dot to quantum computation is discussed. Construction of scalable hardware and all optical implementation of logical gate that exploits discrete nature of electron-hole states and their well concentrated oscillator strenth for ultrafast gate operation are proposed. Rabi population oscillation of an excitonic two-level system in an isolated single InxGa1-xAs quantum dot is manifested by a quantum wave function interferometry in time domain, demonstrating a long lived coherence of zero-dimensional excitonic states and revealed the coherent population flopping under strong optical field. A phase-sensitive coherent gate operation on single-dot exciton qubit is demonstrated.
This paper discusses the potential application of elementary excitation in semiconductor quantum dots to quantum computation. We propose a scalable hardware design and all-optical implementation of logical gates that exploit the discrete nature of electron and hole states and their well-concentrated oscillator strength for ultrafast gate operations. We also propose a multiple-bit design based on the nearest neighbor dipole-dipole coupling. Rabi population oscillation of an excitonic two-level system in an isolated single In xGa1-xAs quantum dot is manifested by quantum wave function interferometry in the time domain, demonstrating a long lived coherence of zero-dimensional excitonic states and revealing the coherent population flopping under strong optical field. Phase-sensitive coherent gate operations on a single-dot exciton qubit are demonstrated.
We have previously shown that the quantum Zeno effect can be used to implement quantum logic gates for quantum computing applications, where the Zeno effect was produced using a strong two-photon absorbing medium. Here we show that the Zeno effect can also be used to implement classical logic gates whose inputs and outputs are high-intensity fields (coherent states). The operation of the devices can be understood using a quasistatic analysis, and their switching times are calculated using a dynamic approach. The two-photon absorption coefficient of rubidium vapor is shown to allow operation of these devices at relatively low power levels.