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Journal of Experimental and Theoretical Physics

Noise squeezing in a semiconductor laser with an inhomogeneously broadened gain line

V. V. Kozlov, Alexei S. Trifonov

Published Aug 1, 1997• 1 citation
Publisher

Abstract

This paper is a theoretical analysis of the noise produced by a single-mode semiconductor laser. We allow for spectral hole-burning in the gain line and for the nonlinear dependence of the carrier spontaneous recombination rate on the number of carriers in the active area. We show that these processes do not inhibit the squeezing of the outgoing photon flux noise below the shot noise level at high pump currents but that the degree of squeezing decreases considerably. Finally, we establish that these processes also considerably narrow the squeezing bandwidth.

DOI
10.1134/1.558269

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This paper is a theoretical analysis of the noise produced by a single-mode semiconductor laser. We allow for spectral hole-burning in the gain line and for the nonlinear dependence of the carrier spontaneous recombination rate on the number of carriers in the active area. We show that these processes do not inhibit the squeezing of the outgoing photon flux noise below the shot noise level at high pump currents but that the degree of squeezing decreases considerably. Finally, we establish that these processes also considerably narrow the squeezing bandwidth.
We derive a quantum macroscopic model for a multimode semiconductor laser, starting from a complete microscopic description. Nonlinear gain terms describing saturation and mode–mode interaction are obtained by a suitable treatment of the spectral hole burning in the distribution of carriers. In the case in which there are two neighbouring active longitudinal modes above threshold and for quiet pumping, we calculate the spectrum of the total intensity fluctuations at zero frequency. For moderate pumping level the nonlinear gain terms do not reduce the degree of anticorrelation between modes, leaving the squeezing in total intensity unchanged with respect to the single-mode case. Only for very high pumping does the nonlinear gain suppression become relevant, and the total intensity noise is increased.
We analyze the zero-frequency intensity noise of a single-mode semiconductor laser on the basis of a full quantum-mechanical model which takes into account the carrier distributions over the k states. The theory includes the effects of (i) Coulomb scattering processes, which tend to drive the carriers into intraband Fermi-Dirac quasiequilibrium; (ii) spectral hole burning, i.e., the carrier deviation from quasiequilibrium induced mainly by light-matter interaction; (iii) pump blocking, which, in conformity with the Pauli exclusion principle, prevents the pump carriers whose k state is already occupied from entering the active layer. Our analysis shows that Coulomb scattering and spectral hole burning have only negligible effects on the noise properties of the laser, while pump blocking can bring, under appropriate parametric conditions, a sizable increase of noise intensity. This additional noise can explain why quietly pumped semiconductor lasers fail to reach the perfect squeezing which is expected on the basis of the theory so far available. The squeezing-hindering effect of pump blocking is confirmed as different pumping schemes are employed.
Summary form only given. The intensity noise properties of single-mode semiconductor lasers at zero-frequency are studied on the basis of an operator set of equations for the field, the material polarization, the microscopic carrier distribution and the total carrier number in each band. The theory includes the noise effects of (i) Coulomb scattering processes, which tend to drive the carriers into intraband Fermi-Dirac quasi-equilibrium, (ii) spectral hole burning, i.e. the carrier deviation from quasi-equilibrium induced mainly by light-matter interaction, (iii) pump-blocking, which, in conformity with the Pauli exclusion principle, prevents the pumped carriers whose k-state is already occupied from entering the active layer. All these phenomena are not considered in the standard theory, which starts from a macroscopic set of equations for the field and the total carrier population only. Our analysis shows that Coulomb scattering and spectral hole burning have only negligible effects on the noise properties of the laser, while pump-blocking can bring a sizable increase of intensity noise. Under certain parametric conditions this increase can raise the noise level above the shot noise limit, thus destroying any squeezing. We show that the pump-blocking induced additional noise originates from the field and the material polarization. Since the suppression of field and polarization noise is ensured respectively by destructive interference of field fluctuations at the output mirror and by gain saturation, we conclude that pump-blocking hampers both these phenomena.
The mechanism for quantum noise suppression in a multimode laser with a homogeneously broadened line is explained. It is shown that the spontaneous emission noise and pump noise contribution to the photon number fluctuations inside the laser cavity may be suppressed infinitely (up to their complete elimination) when the number of modes participating in the generation is increased. Low-frequency spectral squeezing for an individual output field mode in optimal conditions tends to 100% as the total number of modes increases. The low-frequency spectral squeezing for the total output field may reach 50% below the shot noise level under optimal conditions. The noise suppression of the laser light is explained by the saturation effect of an atomic transition and inter-mode correlation. A multimode laser is an accessible source of light with potentially fully suppressed quantum noise.
In this paper, we report a theoretical and experimental study of the phase diffusion in a gain-switched single-mode semiconductor laser. Our modelling includes nonlinear dependencies of the carrier recombination rate and the semiconductor material gain on the carrier number. Also a comparison with the results obtained with linear models is performed. We focus on the below threshold operation, that is, the regime where most of the phase diffusion occurs in quantum random number generators based on the above mentioned system. Using the extracted parameters for our laser and simple analytical expressions for the laser linewidth, we show that logarithmic material gain and cubic carrier recombination dependence on the carrier number must be considered for a good agreement between experiments and theory. In this way we show that consideration of these nonlinearities is essential for obtaining a good quantitative description of the phase diffusion when using rate equations modelling.