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Journal of Applied Physics

Intrinsic noise temperatures of YBa2Cu3O7−δ Josephson devices on bicrystal substrates and the upper frequency limit for their operation

J. Chen, Hiroaki Myoren, Kensuke Nakajima, Takashi Yamashita, Peiheng Wu

Published Dec 1, 1996• 8 citations
Publisher

Abstract

Following a method proposed by Divin and Modovets [Sov. Tech. Phys. Lett. 9, 108 (1983)], we have measured at millimeter waveband the intrinsic noise temperatures TN of YBa2Cu3O7−δ Josephson junctions or dc superconducting quantum interference devices (SQUIDs) fabricated on SrTiO3, yttria-stabilized ZrO2, or Si bicrystal substrates. Over wide ranges of physical temperatures TP and the junction’s normal resistance RN, it was found that TN follows TP pretty well. This indicates that the intrinsic noise in the devices is dominated by Johnson noise. TN was also measured in cases where there is external magnetic field applied, or where there is another microwave radiation like the local oscillator in a mixer. The magnetic field or microwave radiation does not seem to affect TN in any appreciable way. To estimate the high frequency performance of the junctions on Si bicrystal substrates, direct irradiation by a far infrared laser at 1.81 THz is carried out and the clear first Shapiro step is observed.

DOI
10.1063/1.363672

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Following a method proposed by Divin and Modovets [Sov. Tech. Phys. Lett. 9, 108 (1983)], we have measured at millimeter waveband the intrinsic noise temperatures TN of YBa2Cu3O7−δ Josephson junctions or dc superconducting quantum interference devices (SQUIDs) fabricated on SrTiO3, yttria-stabilized ZrO2, or Si bicrystal substrates. Over wide ranges of physical temperatures TP and the junction’s normal resistance RN, it was found that TN follows TP pretty well. This indicates that the intrinsic noise in the devices is dominated by Johnson noise. TN was also measured in cases where there is external magnetic field applied, or where there is another microwave radiation like the local oscillator in a mixer. The magnetic field or microwave radiation does not seem to affect TN in any appreciable way. To estimate the high frequency performance of the junctions on Si bicrystal substrates, direct irradiation by a far infrared laser at 1.81 THz is carried out and the clear first Shapiro step is observed.
We have studied low frequency (1/f) noise of YBa2Cu3O7−δ dc superconducting quantum interference devices (SQUIDs) on SrTiO3 bicrystal substrates. 1/f flux noise, either measured at different temperatures for optimized bias current or measured at 77 K for different bias currents, is almost constant. These facts imply that 1/f noise mainly comes from fluctuations of the critical current of the Josephson junction that form the SQUID. Also, we explain the critical current fluctuations in the junction by an equilibrium temperature fluctuation model.
The high-frequency response of bicrystal YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// Josephson junctions for far infrared laser irradiation is presented. The junctions on silicon and MgO substrates exhibit a remarkable first order Shapiro step for the methanol line at 1.76 THz. dV/dI measurements reveal several steps corresponding to the methanol lines at 1.48, 1.76 and 2.53 THz. The line width of Josephson oscillation at these frequencies is estimated from the width of the Shapiro steps. It is suggested that the excess shot noise broadens the line width.
We have measured the noise of YBa2Cu3O7−δ superconductor-normal-superconductor (SNS) junctions whose high normal-state resistances and characteristic frequencies make them suitable for THz frequency mixers. By directly measuring the 1 GHz power spectral density delivered to a low-noise 50 Ω radiometer system, the noise could be measured over a wide range of dc voltage and temperature, without complications due to 1/f noise, and without invoking any specific model. At a physical temperature of 4 K, the lowest noise junction had an available noise temperature of 31±2 K, corresponding to an effective noise temperature of the normal resistance of 9 K. The effective noise temperature of the normal resistance is approximately equal to the physical temperature at high temperatures, but approaches a limiting value at low temperatures, implying an excess current noise of unknown origin.
Using high-Tc Josephson junctions made of YBa2Cu3O7−δ deposited across MgO bicrystal boundary, at terahertz (THz) frequency band, we demonstrated both fundamental and harmonic mixing. Radiation from a far-infrared laser was coupled to the junction, which was integrated with a planar bow-tie antenna, via an extended hyperhemispherical silicon lens. Fundamental mixing manifested itself in the junction’s dc current–voltage (I–V) curve as a third Shapiro step in addition to those two induced by the THz laser lines from a slightly misaligned resonator. In harmonic mixing between a THz laser line and a microwave local oscillator, the highest harmonic number we could get was 490 with a signal-to-noise ratio of 9 dB at the intermediate frequency.
The subject of electronic noise in high- superconducting Josephson devices and in their applications is considered. Several types of grain boundary junctions, prepared in different ways by four separate international laboratories, are fully characterized in terms of their electrical and noise properties at a range of temperatures, frequencies, magnetic fields and in the presence of microwaves. Similar characterization is carried out for multijunction Josephson flux-flow arrays, and bi-epitaxial SQUIDs. The theory of Likharev and Semenov for thermal noise in low- junctions is adopted as a reference against which excess noise can be identified in high- junctions. It is combined with theoretical models of excess noise based on fluctuations of critical current and resistance to provide accurate fitting of the observed noise curves. It is shown that the normalized levels of critical current and normal resistance fluctuations for all of the junction types examined are remarkably close (typically around and at 100 Hz) and are nearly independent of temperature in the range T = 30 - 80 K. The frequency dependence is close to the universal 1/f law with some deviations due to trapping of charge carriers at discrete states in the tunnelling barrier. Measurements of voltage noise levels and critical current fluctuations in multijunction flux-flow amplifiers, reported for the first time, are consistent with levels in single junctions of the same type. Excess noise is studied as a function of external magnetic field, in a way that has not been previously described. A new interpretation of the magnetic field-dependent noise data indicates that absolute levels of critical current fluctuations are nearly independent of applied magnetic field. This observation does not appear to have been reported elsewhere. It has important implications for the operation of grain boundary Josephson devices in real applications. Voltage noise in the presence of microwave irradiation, at operating points between Shapiro steps, is consistent with a modified form of the Likharev - Semenov equation which takes into account the known level of critical current fluctuations as measured in field-free conditions. The implications of these results for further improvements in device performance are discussed, and directions for further work are suggested.
We report on nanopatterned YBa2Cu3O7-δ (YBCO) direct current superconducting quantum interference devices (SQUIDs) based on grain boundary Josephson junctions. The nanoSQUIDs are fabricated by epitaxial growth of 120 nm-thick films of the high-transition temperature cuprate superconductor YBCO via pulsed laser deposition on MgO bicrystal substrates with 24° misorientation angle, followed by sputtering of dAu = 65 nm thick Au. Nanopatterning is performed by Ga focused ion beam (FIB) milling. The SQUID performance is comparable to devices on SrTiO3 (STO), as demonstrated by electric transport and noise measurements at 4.2 K. MgO has orders of magnitude smaller dielectric permittivity than STO; i.e., one may avoid Au as a resistively shunting layer to reduce the intrinsic thermal flux noise of the nanoSQUIDs. However, we find that the Au layer is important for avoiding degradation during FIB milling. Hence, we compare devices with different dAu produced by thinning the Au layer via Ar ion milling after FIB patterning. We find that the reduction of dAu yields an increase in junction resistance, however at the expense of a reduction of the critical current and increase in SQUID inductance. This results in an estimated thermal flux noise that is almost independent of dAu. However, for two devices on MgO with 65 nm-thick Au, we find an order of magnitude lower low-frequency excess noise as compared to nanoSQUIDs on STO or those on MgO with reduced dAu. For one of those devices we obtain with bias-reversal readout ultra-low flux noise of ∼175 nΦ0 Hz-1/2 down to ∼10 Hz.