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Applied Physics Letters

Low power all-optical bistability in InGaAs-AlInAs superlattices: Demonstration of a wireless self-electro-optical effect device operating at 1.5 μm

J. Couturier, Paul H. Voisin, Jean‐Christophe Harmand

Published Feb 7, 1994• 11 citations
Publisher

Abstract

We report the observation of optical transmission bistability at low temperature in unprocessed InGaAs-AlInAs superlattice p-i-n structures. Bistability results, in analogy with the self-electro-optical effect device, from a positive feedback mechanism due to the interplay between Wannier–Stark effect, built-in field, and screening by photocarriers.

DOI
10.1063/1.111052

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Demonstration of All-Optical Bistability in a Strained Piezoelectric Self Electro-optic Effect Device

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The quantum confined Stark effect has found wide application in devices for optical modulation and bistable switching. Whilst normally-incident strained layer modulators and self electro-optic effect devices (SEEDs) have been demonstrated [1-3], the introduction of strain has provided little performance advantage. Recently there has been a growing interest in the properties of strained piezoelectric structures resulting from growth on orientations other than the (100) [4-6]. In this communication we present the results of an investigation of the electro-optical absorption modulation properties of a strained InGaAs/GaAs multiple quantum well p-i(MQW)-n grown on a (111)B GaAs substrate. Subsequently we demonstrate optical bistability using the self electro-optic effect without the application of an external bias.

Integrated Photonics Research•Jan 1, 1994•0 citations
We report the observation of optical transmission bistability at low temperature in unprocessed InGaAs-AlInAs superlattice p-i-n structures. Bistability results, in analogy with the self-electro-optical effect device, from a positive feedback mechanism due to the interplay between Wannier–Stark effect, built-in field, and screening by photocarriers.
It is shown theoretically that optical bistability is possible in a self-electro-optic effect device (SEED) with single asymmetric quantum wells because of the blue shift of the optical absorption edge with applied field possible in such structures (in contrast to the normal red shift in symmetric wells). The concept is a simplification of the scheme of J. Khurgin [Appl. Phys. Lett. 53, 779 (1988)] (which uses unequal, opposed pairs of asymmetric wells) and shares the potential advantages of lower loss in the transmitting state and less stringent requirements on the exciton absorption peaks.
The quantum confined Stark effect has found wide application in devices for optical modulation and bistable switching. Whilst normally-incident strained layer modulators and self electro-optic effect devices (SEEDs) have been demonstrated [1-3], the introduction of strain has provided little performance advantage. Recently there has been a growing interest in the properties of strained piezoelectric structures resulting from growth on orientations other than the (100) [4-6]. In this communication we present the results of an investigation of the electro-optical absorption modulation properties of a strained InGaAs/GaAs multiple quantum well p-i(MQW)-n grown on a (111)B GaAs substrate. Subsequently we demonstrate optical bistability using the self electro-optic effect without the application of an external bias.